AOTF22N50 [FREESCALE]
500V,22A N-Channel MOSFET; 500V ， 22A N沟道MOSFET
| 型号： | AOTF22N50 |
| 厂家： | 
Freescale |
| 描述： | 500V,22A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
General Description
The AOT22N50 & AOTF22N50 have been fabricated
using an advanced high voltage MOSFET process that is
robustness in popular AC-DC applications.By providing
capability these parts can be adopted quickly intonew
designed to deliver high levels of performance and
low RDS(on), Ciss and Crss along with guaranteed avalanche
and existing offline power supply designs.
Features
VDS
600V@150℃
22A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.26Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT22N50
AOTF22N50
Units
Drain-Source Voltage
Gate-Source Voltage
500
±30
V
V
VGS
TC=25°C
22
15
22*
15*
Continuous Drain
Current
ID
TC=100°C
A
Pulsed Drain Current C
IDM
88
7
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
735
1470
5
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
417
3.3
50
PD
Power Dissipation B
Derate above 25oC
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
°C
°C
Parameter
Symbol
RθJA
AOT22N50
AOTF22N50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
0.3
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
2.5
* Drain current limited by maximum junction temperature.
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AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.57
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=11A
VDS=40V, ID=11A
IS=1A,VGS=0V
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.21
25
0.26
Ω
S
VSD
0.7
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
22
88
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2465 3086 3710
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
200
14
290
24
380
35
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
55
17
12
69
22
83
27
36
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=22A
Gate Source Charge
Gate Drain Charge
24
Turn-On DelayTime
60
VGS=10V, VDS=250V, ID=22A,
Turn-On Rise Time
122
124
77
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=22A,dI/dt=100A/µs,VDS=100V
IF=22A,dI/dt=100A/µs,VDS=100V
415
7.5
524
9.6
630
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
40
30
20
10
0
VDS=40V
10V
6.5V
-55°C
25°C
125°C
6V
VGS=5.5V
0.1
0
5
10
15
VDS (Volts)
20
25
30
0
2
4
6
8
10
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
0.4
0.3
0.2
0.1
0.0
3
2.5
2
VGS=10V
ID=11A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
5
10
15
ID (A)
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
Ciss
VDS=400V
ID=22A
Coss
6
Crss
3
0
10
0
20
40
60
80
100
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
10
100
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1ms
10
1
10ms
0.1s
1s
1ms
DC
10ms
1
DC
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT22N50 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF22N50 (Note F)
25
20
15
10
5
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
4/6
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AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.3°C/W
1
0.1
P
D
0.01
0.001
T
on
T
Single Pulse
0.0001
0.000001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT22N50 (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
P
D
0.01
0.001
T
on
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF22N50 (Note F)
5/6
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AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
Gate
DUT
C
avveefformm
V
g
QQg
10V
+
VDC
+
Q
Qgd
VDC
-
V
Igg
Chargge
R
RL
Vds
VVds
9
+
Vddd
DDUT
VVgs
VDC
Rg
-
1
VVgs
VVgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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