AOU414L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOU414L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOU414
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU414 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOU414 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU414L is a Green Product ordering option.
AOU414 and AOU414L are electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 5.7mΩ (VGS = 10V)
DS(ON) < 7.5mΩ (VGS = 4.5V)
R
TO-251
D
S
Top View
Drain
Connected to
Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
85
V
A
TC=25°C G
TC=100°C B
ID
73
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
200
30
A
140
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
100
0.7
125
1.5
°C/W
°C/W
RθJL
Alpha & Omega Semiconductor, Ltd.
AOU414
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
0.005
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
100
2.4
nA
V
VGS(th)
ID(ON)
1.2
1.8
200
A
4.7
6.5
6
5.7
8
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
V
V
GS=4.5V, ID=20A
DS=5V, ID=20A
7.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
85
0.7
IS=1A,VGS=0V
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6060 7000
638
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
355
VGS=0V, VDS=0V, f=1MHz
0.45
0.6
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
96.4
46.4
13.6
15.6
15.7
14.2
55.5
14
115
55
nC
nC
nC
nC
ns
V
GS=4.5V, VDS=15V, ID=20A
Qgd
tD(on)
tr
tD(off)
tf
21
21
75
21
38
29
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
24
A: The value of RθJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
4.5V
VDS=5V
3.5V
125°C
VGS=3V
25°C
0
1
2
3
4
5
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
V
DS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.8
1.6
1.4
1.2
1
ID=20A
VGS=4.5V
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
6
25°C
25°C
1.0E-03
4
1.0E-04
1.0E-05
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
8
VDS=15V
ID=20A
Ciss
7000
6000
5000
4000
3000
2000
1000
0
6
4
Coss
Crss
2
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
1000
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
800
600
400
200
0
100µs
10µs
1ms
10ms
DC
TJ(Max)=175°C
TA=25°C
1
0.1
1E-05 1E-04 0.001 0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOU414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
TA=25°C
L ⋅ ID
tA
=
BV −VDD
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0.00001
0.0001
0.001
0.01
T
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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