AOZ1325DI [AOS]

Dual Channel Load Switch with Controlled Slew Rate; 与摆率控制的双通道负载开关
AOZ1325DI
型号: AOZ1325DI
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

Dual Channel Load Switch with Controlled Slew Rate
与摆率控制的双通道负载开关

开关
文件: 总12页 (文件大小:615K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AOZ1325DI  
Dual Channel Load Switch with  
Controlled Slew Rate  
General Description  
Features  
The AOZ1325DI is a P-channel high-side load switch  
with slew rates of 1ms. The AOZ1325DI provide an  
output discharge circuit to quickly discharge the output  
when the switch is disabled.  
1.6V to 5.5V input voltage range  
Low R (250mtypical at 1.8V)  
DS(ON)  
Controlled turn-on slew rate: 1ms  
Output discharge function  
Low quiescent current (1.0µA typical)  
Low Shutdown Current (<1µA)  
4kV ESD rating  
The P-channel MOSFET has typical on resistance of  
250mat 1.8V. The very low R  
significantly  
DS(ON)  
reduces the power path dissipation. The input voltage  
range of AOZ1325DI is from 1.6V to 5.5V. The control  
input is compatible with both TTL and CMOS logic. Ultra  
low quiescent current makes this product suitable for any  
portable applications.  
Tiny 3x3mm DFN package  
Applications  
Cellular phones  
The AOZ1325DI is available in 8-pin 3x3 DFN package  
and is rated over the -40°C to +85°C ambient  
temperature range.  
MP3 players  
Personal media players  
Notebook computers  
Digital still cameras  
Hot-swap applications  
Typical Applications Circuit  
V
V
IN  
OUT  
OUT1  
IN1  
C1  
C3  
1µF  
0.1µF  
OFF ON  
EN1  
AOZ1325DI  
V
V
IN  
OUT  
OUT2  
IN2  
C2  
C4  
1µF  
0.1µF  
OFF ON  
EN2  
GND  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 1 of 12  
AOZ1325DI  
Ordering Information  
Part Number  
Slew Rate  
Output Discharge  
Package  
Environmental  
AOZ1325DI  
1ms  
Yes  
3x3 DFN-8  
RoHS Compliant  
Green Product  
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.  
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.  
Pin Configuration  
Top View  
1
2
3
4
8
7
6
5
VIN1  
EN1  
EN2  
VIN2  
VOUT1  
NC  
GND  
VOUT  
2
3mm x 3mm DFN-8  
Pin Description  
Pin Name  
Pin Number  
Pin Function  
VIN1  
EN1  
EN2  
VIN2  
1
2
3
4
5
6
7
8
Input. IN is the drain of the P-channel MOSFET. It is the supply input of the IC.  
Enable. The P-channel MOSFET turns on when EN is logic high.  
Enable. The P-channel MOSFET turns on when EN is logic high.  
Input. IN is the drain of the P-channel MOSFET. It is the supply input of the IC.  
Output. OUT is the source of the P-channel MOSFET.  
Ground.  
VOUT  
2
GND  
NC  
No Connect.  
VOUT  
1
Output. OUT is the source of the P-channel MOSFET.  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 2 of 12  
AOZ1325DI  
Absolute Maximum Ratings  
Thermal Ratings  
Exceeding the Absolute Maximum ratings may damage the device.  
The device is not guaranteed to operate beyond the Thermal Ratings.  
Parameter  
Input Voltage (VIN)  
Enable Voltage (VEN  
Rating  
Parameter  
Input Voltage (VIN)  
Rating  
6V  
+1.6 to +5.5V  
)
VIN + 0.3V  
Junction Temperature (TJ)  
-40°C to +125°C  
Continuous Drain Current (ID)  
TA = 25°C  
Package Thermal Resistance,  
3 X 3 DFN-8 (ΘJA  
)
136°C/W  
±1.0A  
TA = 85°C  
±0.7A  
Pulsed Drain Current (IDP  
)
±6A  
Continuous Diode Current (IS)  
Storage Temperature (TS)  
ESD Rating (1)  
-50mA  
-55°C to +150°C  
4kV  
Note:  
1. Devices are inherently ESD sensitive, handling precautions are  
required. Human body model is a 100pF capacitor discharging  
through a 1.5kresistor.  
Electrical Characteristics  
TA = 25°C, VIN = VEN = 5V, unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max  
Units  
VEN_TH  
IIN  
Enable Threshold Voltage  
VIN = 1.6V to 4.5V, ID = -250uA  
VIN =VEN = 5.5V  
0.3  
1.2  
3
V
Quiescent Supply Current  
(Single Channel)  
1.6  
µA  
IOFF  
OFF state Leakage Current  
(Single Channel)  
VIN = +5.5V, VEN = 0V  
1
μA  
RDS(ON)  
Switch On-Resistance  
(Single Channel)  
VIN = 3.3V, ID = -100mA, VEN = 1.5V  
VIN = 1.8V, ID = -100mA, VEN = 1.5V  
150  
250  
210  
350  
m  
mΩ  
RSHUTDOWN  
Turn-off Resistance  
(Single Channel)  
VIN = 3.6V, ITEST = 1mA, VEN = 0V  
162  
220  
DELAY TIME  
TD(ON)  
Output Turn-on Delay  
Output Rise-time  
VIN = 3.6V, ID = -100mA, VEN = 1.5V  
VIN = 3.6V, ID = -100mA, VEN = 1.5V  
320  
1000  
60  
700  
1500  
200  
µs  
µs  
ns  
TR  
500  
TD(OFF)  
Output Turn-off Delay  
VIN = 3.6V, ID = -100mA,  
VEN = 1.5V without output cap  
TF  
Output Fall-time  
VIN = 3.6V, ID = -100mA,  
20  
100  
ns  
VEN = 1.5V without output cap  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 3 of 12  
AOZ1325DI  
Typical Operating Characteristic  
R
Variance with Temperature  
EN Threshold Voltage vs. Input Voltage  
DS(ON)  
Vds = 3.6V, Id = 0.1A  
220  
200  
180  
160  
140  
120  
100  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
VIH, Id = -250A  
VIL, Id = -250A  
-40 -20  
0
20  
40  
60  
80 100 120 140 160  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
Temperature (°C)  
Input Voltage (V)  
ON Resistance vs. Input Voltage  
ON Resistance vs. Input Voltage  
400  
350  
300  
250  
200  
150  
100  
800  
700  
600  
500  
400  
300  
200  
100  
0
Vin=1.8V  
Vin=2.5V  
Vin=4.5V  
IL = 1.2A  
IL = 0.9A  
IL = 0.1A  
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Load Current (A)  
Input Voltage (V)  
Turn-on Delay vs. Input Voltage  
Rise Time vs. Input Voltage  
1200  
1000  
800  
600  
400  
200  
0
350  
300  
250  
200  
150  
100  
50  
0
1.5  
2
2.5  
3
3.5  
4
4.5  
5
1.5  
2
2.5  
3
3.5  
4
4.5  
5
Input Voltage (V)  
Input Voltage (V)  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 4 of 12  
AOZ1325DI  
Typical Operating Characteristic (Continued)  
Turn-off Delay vs. Input Voltage  
Fall Time vs. Input Voltage  
45  
40  
35  
30  
25  
20  
15  
10  
5
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
1.5  
0
1.5  
2
2.5  
3
3.5  
4
4.5  
5
2
2.5  
3
3.5  
4
4.5  
5
Input Voltage (V)  
Input Voltage (V)  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 5 of 12  
AOZ1325DI  
Functional Characteristics  
Turn-On/Turn-Off Timing  
Turn-Off Timing  
ENABLE  
2V/div  
ENABLE  
2V/div  
V
OUT  
2V/div  
V
OUT  
2V/div  
I
I
OUT  
OUT  
100mA/div  
100mA/div  
Time: 4µs/div  
Time: 40µs/div  
Turn-On/Turn-Off Timing  
Turn-Off Timing  
ENABLE  
2V/div  
ENABLE  
2V/div  
V
OUT  
2V/div  
V
OUT  
2V/div  
I
OUT  
I
OUT  
100mA/div  
100mA/div  
Time: 400µs/div  
Time: 10µs/div  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 6 of 12  
AOZ1325DI  
Timing Diagram  
VIH  
EN  
VIL  
90%  
90%  
10%  
OUT  
T
D(ON)  
T
D(OFF)  
T
R
Figure 1. AOZ1325DI Timing Diagram  
Functional Block Diagram  
IN  
OUT  
Gate Driver &  
Slew Rate  
Control  
160Ω  
AOZ1325DI  
EN  
GND  
Figure 2. Functional Block Diagram (single channel)  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 7 of 12  
AOZ1325DI  
Detailed Description  
Internal Discharge Resistor  
AOZ1325DI has a slew rate of 1ms. This option  
significantly reduces the inrush current when the  
MOSFET turns on, allowing the use of very small input  
capacitor. The AOZ1325DI also include an internal  
output discharge circuit that quickly discharges the  
output to ground when the device is disabled.  
The AOZ1325DI has an internal 160resistor to  
discharge any remaining voltage from the system to  
the ground that is store in a capacitive load. This  
provides a safe shutdown of the system to prevent any  
damages to the devices. This function is controlled from  
the Enable pin.  
On/Off Control  
Slew Rate Control  
The AOZ1325DI is enabled when the EN pin is asserted  
high. The device is disabled when the EN pin is asserted  
low. The EN input is compatible with both TTL and  
CMOS logic.  
The AOZ1325DI is a family of P-channel high-side load  
switches with controlled slew rate. The device is enabled  
when the EN pin is high. Once enabled, the gate driver  
and slew-rate control circuitry immediately raises the  
source-to-gate voltage of the P-channel MOSFET to its  
threshold level, and then gradually turns on the MOSFET  
by linearly increases the source-to-gate voltage. This  
slow turn-on action effectively limits the input inrush  
current and provides a nice ramp for the output voltage.  
After the MOSFET is fully enhanced, the AOZ1325DI  
quickly increases the source-to-gate voltage to the full  
input voltage to minimize on resistance and reduce  
power dissipation.  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 8 of 12  
AOZ1325DI  
PRELIMINARY INFORMATION  
Applications Information  
Input Capacitor Selection  
Power-up Sequence  
Use a 1µF or larger capacitor for input bypassing.  
EN pin must be powered up after V pin, in order to  
IN  
Place the capacitor close to the IN pins of AOZ1325DI.  
avoid latch-up, or mis-operation of switch. We do not  
assume any liability or responsibility for any loss or  
damage arising from misuse or inappropriate use of the  
product.  
Output Capacitor Selection  
Use a 0.1µF or larger capacitor between OUT and GND.  
The capacitance does not affect the turn-on slew rate.  
However, a larger capacitor makes the initial turn-on  
transient smoother.  
Layout Guidelines  
Good PCB is important for improving the thermal  
performance of AOZ1325DI. Place the input and output  
bypass capacitors close to the IN and OUT pins. The  
input and output PCB traces should be as wide as  
possible for the given PCB space. Use a ground plane  
to enhance the power dissipation capability of the device.  
Thermal Considerations  
To ensure proper operation, the maximum junction  
temperature (T  
) of the AOZ1325DI should not  
J(MAX)  
exceed 125°C. Several factors attribute to the junction  
temperature rise: load current, MOSFET on resistance  
(R  
), junction-to-ambient thermal resistance (Θ ),  
DS (ON)  
JA  
and ambient temperature (T ). Use the following  
A
equation to determine the maximum continuous load  
current I  
:
LOAD(MAX)  
T
T  
A
J(MAX)  
I
=
---------------------------------------  
× R  
LOAD(MAX)  
Θ
DS(ON)  
JA  
where;  
RDS(ON) is the maximum value of the MOSFET on resistance at  
25°C.  
Please note the maximum load current should not exceed  
the absolute maximum current rating of the switch.  
For example, when V = 1.8V, the maximum continuous  
IN  
load current at room temperature is:  
125°C 25°C  
I
=
= 1.4A  
----------------------------------------------  
LOAD(MAX)  
136°C × R  
DS(ON)  
Since the calculated current is greater than the absolute  
maximum current rating, the maximum load current at  
V
= 1.8V and room temperature is 1A. Exceeding the  
IN  
maximum continuous load current may cause damage to  
the device.  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 9 of 12  
AOZ1325DI  
Package Dimensions, DFN 3 x 3  
0.10mm  
M
b
A1  
θ1  
L1  
E1  
E
c
e
A
TOP VIEW  
SIDE VIEW  
L
D
BOTTOM VIEW  
Dimensions in millimeters  
Dimensions in inches  
RECOMMENDED LAND PATTERN  
Symbols Min.  
Nom. Max.  
Symbols Min.  
Nom. Max.  
0.028 0.031 0.035  
0.000 0.002  
A
A1  
b
0.70  
0.00  
0.24  
0.08  
0.80  
0.90  
0.05  
0.35  
0.25  
A
A1  
b
0.58  
0.40  
0.30  
0.009 0.012 0.014  
0.003 0.006 0.010  
0.114 BSC  
c
0.15  
c
3.00  
D
2.90 BSC  
2.80 BSC  
2.30 SC  
0.65 BSC  
0.38  
D
E
E
0.110 BSC  
0.65  
E1  
e
E1  
e
0.091 SC  
0.026 BSC  
L
0.20  
0.05  
0°  
0.45  
L
0.008 0.015 0.018  
UNIT: mm  
L1  
θ1  
L1  
θ1  
0.002  
10°  
12°  
0°  
10°  
12°  
Notes:  
1. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils each.  
2. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 10 of 12  
AOZ1325DI  
Tape and Reel Dimensions, DFN 3 x 3  
Tape  
P2  
P1  
D1  
D0  
E1  
K0  
E2  
E
B0  
A0  
P0  
T
Feeding Direction  
UNIT: mm  
Package  
A0  
B0  
K0  
D0  
1.50  
D1  
E
E1  
E2  
P0  
P1  
P2  
T
1.00  
3.40  
0.10  
3.35  
0.10  
1.10  
0.10  
8.00  
+0.30/-0.10  
1.75  
0.10  
3.50  
0.05  
4.00  
0.10  
4.00  
0.10  
2.00  
0.05  
0.23  
0.20  
DFN 3x3 EP  
+0.10/-0.00 +0.25/-0.00  
Reel  
W1  
S
R
K
M
N
H
UNIT: mm  
Tape Size Reel Size  
8mm ø180  
M
N
W1  
H
S
K
R
ø180.00 60.0  
0.50 0.50  
8.4  
+1.5/-0  
13.0  
0.20  
1.5  
Min.  
13.5  
Min.  
3.0  
0.50  
Leader/Trailer and Orientation  
Leader Tape  
500mm min.  
Trailer Tape  
300mm min.  
Components Tape  
Orientation in Pocket  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 11 of 12  
AOZ1325DI  
Package Marking  
DFN 3 x 3  
$1 $2 $3 $4  
$T $O $A $W  
$L $T  
Pin 1 Dot  
This datasheet contains preliminary data; supplementary data may be published at a later date.  
Alpha & Omega Semiconductor reserves the right to make changes at any time without notice.  
LIFE SUPPORT POLICY  
ALPHA & OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body or (b) support or sustain life, and (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of  
the user.  
2. A critical component in any component of a life  
support, device, or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
Rev. 1.2 September 2009  
www.aosmd.com  
Page 12 of 12  

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