CBSL6 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL6 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL6
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The ASI CBSL6 is Designed for
A
B
C
.040x45°
2XØ.130
4X .025 R
FEATURES:
.115
D
.430
·
E
·
F
.125
I
· Omnigold™ Metalization System
G
H
L
K
MAXIMUM RATINGS
J
2.4 A
50 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCES
VEBO
PDISS
TJ
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
A
B
C
D
E
F
G
H
I
35 V
3.5 V
53 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
3.3 OC/W
J
K
L
TSTG
qJC
ORDER CODE: ASI10580
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 5 mA
IC = 5 mA
IE = 5 mA
VCE = 24 V
VCB = 24 V
VCE = 10 V
24
V
BVCBO
BVEBO
ICEO
50
V
3.5
V
1.0
1.0
100
mA
mA
---
ICBO
hFE
IC = 0.1 A
20
10
COB
VCB = 24 V
f = 1.0 MHz
f = 960 MHz
8.5
---
pF
VCC = 24 V
ICQ = 25 mA
PG
dB
%
POUT = 6.0 W
50
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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