HF220-28 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF220-28 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF220-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 4L FLG
The ASI HF220-28 is Designed for
.112x45°
L
FEATURES:
A
E
B
Ø.125 NOM.
FULL R
C
C
· PG = 12 dB min. at 220 W/30 MHz
· IMD3 = -30 dBc max. at 220 W(PEP)
· Omnigold™ Metalization System
B
E
E
D
F
G
H
K
MAXIMUM RATINGS
J
I
IC
16 A
70 V
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
VCBO
VCEO
VEBO
PDISS
TJ
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.125 / 3.18
.125 / 3.18
.245 / 6.22
.255 / 6.48
35 V
.720 / 18.28
.7.30 / 18.54
4.0 V
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
320 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.7 OC/W
J
K
L
TSTG
qJC
.980 / 24.89
ORDER CODE: ASI10609
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
BVCES
BVEBO
ICEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 100 mA
IE = 20 mA
VCE = 30 V
VCE = 35 V
VCE = 5.0 V
35
V
70
V
4.0
V
5.0
5.0
50
mA
mA
---
ICES
hFE
IC = 7.0 A
15
---
COB
VCB = 28 V
VCE = 28 V
VCE = 28 V
f = 1.0 MHz
POUT = 220 W
POUT = 220 W
450
---
---
pF
GP
12
dB
-30
ICQ = 750 mA
ICQ = 750 mA
IMD3
h C
dBc
%
40
---
Load
:1
---
VSWR
Mismatch
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1202 · TELEX: 18-2651 · FAX (818) 765-3004
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