MSC81250M [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MSC81250M |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC81250M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 2NL FLG
A
1
The ASI MSC81250M is Designed for
DME/TACAN Applications up to 1150
MHz.
. 0 2 5
x 4 5 °
4 x . 0 6 2
x 4 5 °
2 X
B
Ø
D
C
2
E
F
3
G
FEATURES:
H
L
I
J
K
• Internal Input/Output Matching Networks
• PG = 6.2 dB at 250 W/1150 MHz
• Omnigold™ Metalization System
P
N
M
M
I N I M
e
U
m
M
m
M
A X I M
U
m
M
m
D
I M
in c h
s
/
in c h
e
s
/
/
. 0 2 0
. 1 0 0
. 3 7 6
. 1 1 0
. 3 9 5
/
0 . 5 1
2 . 5 4
9 . 5 5
2 . 7 9
. 0 3 0
0 . 7 6
A
/
/
/
B
C
D
E
F
G
H
I
. 3 9 6
. 1 3 0
. 4 0 7
/
/
1 0 . 0 6
3 . 3 0
MAXIMUM RATINGS
/
/
1 0 . 0 3
1 0 . 3 4
. 1 9 3
. 4 5 0
. 1 2 5
/
/
4 . 9 0
17.8 A
55 V
IC
VCC
PDISS
TJ
1 1 . 4 3
3 . 1 8
/
. 6 4 0
. 8 9 0
. 3 9 5
. 0 0 4
. 0 5 2
. 1 1 8
/
/
/
1 6 . 2 6
2 2 . 6 1
1 0 . 0 3
0 . 1 0
. 6 6 0
. 9 1 0
. 4 1 5
. 0 0 7
. 0 7 2
. 1 3 1
. 2 3 0
/
1 6 . 7 6
2 3 . 1 1
1 0 . 5 4
0 . 1 8
/
/
J
K
L
600 W @ TC ≤ 80 °C
-65 °C to +250 °C
-65 °C to +200 °C
0.2 °C/W
/
/
/
/
/
/
/
1 . 3 2
1 . 8 3
M
N
P
3 . 0 0
3 . 3 3
5 . 8 4
TSTG
θJC
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 10 mA
IC = 25 mA
IE = 1.0 mA
65
V
65
BVCER
BVEBO
ICES
V
RBE = 10 Ω
3.5
V
V
CE = 50 V
CE = 5.0 V
25
mA
---
V
IC = 1.0 A
15
120
hFE
6.2
40
6.5
38
PG
ηC
dB
%
VCC = 50 V
PIN = 250 W
f = 1025 - 1150 MHz
250
270
W
POUT
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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