MGA-16116-BLKG [AVAGO]
Dual LNA for Balanced Application 450 â 1450 MHz; 双路低噪声放大器的平衡施用450 ???? 1450兆赫
| 型号： | MGA-16116-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Dual LNA for Balanced Application 450 â 1450 MHz |
| 文件： | 总17页 (文件大小：655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MGA-16116
Dual LNA for Balanced Application 450 – 1450 MHz
Data Sheet
Description
Features
Avago Technologies’ MGA-16116 is an ultra low-noise • Ultra Low Noise Figure
high linearity amplifier pair with built-in active bias and
• Variable Bias and Shutdown functionality
shutdown features for balanced applications in the 900
MHz band. Shutdown functionality is achieved using a
single DC voltage input pin.High linearity is achieved
through the use of Avago Technologies’ proprietary GaAs
• High IIP3: +19 dBm typ.
[1]
• GaAs E-pHEMT Technology
3
• Small package size: 4.0 x 4.0 x 0.85 mm
• RoHS and MSL1 compliant.
[1]
Enhancement-mode pHEMT process . It is housed in a
miniature 4.0 x 4.0 x 0.85 mm 16-pin Quad Flat No-lead
(QFN). The compact footprint coupled with ultra low noise
and high linearity makes MGA-16116 an ideal choice for
basestation transmitters and receivers.
Typical Performances
900 MHz @ 4.8 V, 60.9 mA (typ per amplifier)
• Gain: 18.4 dB
For applications > 1450 MHz, it is recommended to use
MGA-16216 1440-2350 MHz or MGA-16316 1950-4000
MHz. All 3 products share the same package and pin out
configuration.
[2]
• NF: 0.27 dB
• IIP3: 19.1 dBm
• P1dB: 21.2 dBm
Component Image
• Shutdown voltage Vsd range > 1.6 V
3
4.0 x 4.0 x 0.85 mm 16-Lead QFN
• Total shutdown current (Vsd1, Vsd2 = 3 V): 1.84 mA
Applications
Note:
Package marking provides orientation and
identification
“16116 “ = Device Code
“YYWW” = Date Code identifies year and
AVAGO
• Basestation receivers and transmitters in balanced
16116
configuration.
YYWW
• Ultra low-noise RF amplifiers.
work week of manufacturing
XXXX
“XXXX” = Last 4 digit of assembly lot
Notes:
number
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Measured at RFin pin of packaged part, other losses deembedded.
3. Good RF practice requires all unused pins to be grounded.
Pin Configuration
Pin Use
Pin Use
1
2
3
4
5
6
7
8
9
RFIN1
10 GND
GND
GND
RFIN2
11 GND
Pin 1
Pin 2
Pin 3
Pin 4
Pin 12
Pin 11
Pin 10
Pin 9
12 RFOUT1
13 Not used
Pin 17
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Bias_out2 14 Bias_in1
Vsd2 15 Vsd1
Bias_in2 16 Bias_out1
Not used 17 GND
RFOUT2
– –
VIEW FROM THE TOP
[1]
[3]
Absolute Maximum Rating T = 25° C
Thermal Resistance
A
(Vd = 4.8 V, Idd = 53 mA, T =100° C)
jc
Symbol
Vdd
Idd
Vsd
Pin
Parameter
Units
V
Absolute Maximum
c
q
= 58.6°C/W
Drain Voltage, RF output to ground
Drain Current
5.5
Notes:
mA
V
100
5.5
1. Operation of this device is excess of any
of these limits may cause permanent
damage.
2. Source lead temperature is 25° C. Derate
17 mW/°C for Tc > 118° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
Shutdown Voltage
CW RF Input Power with LNA On
CW RF Input Power with LNA Off
Power Dissipation
dBm
dBm
mW
°C
27
Pin
27
Pd
550
150
-65 to 150
Tj
Junction Temperature
Storage Temperature
Tstg
°C
Electrical Specifications
T = 25° C, Vdd1 = Vdd2 = 4.8 V, Vsd1 = Vsd2 = 0 V at Rbias = 1.5 kohm, RF performance at 900 MHz, CW operation unless
A
otherwise stated.
Symbol
Vdd
Parameter and Test Condition
Supply Voltage
Units
V
Min.
Typ.
4.8
Max.
Idd
Total Supply Current per amplifier (Idq+Ibias)
Gain
mA
dB
48
60.9
18.4
0.27
21.2
19.1
-10.9
-17.5
-22.4
-36.8
0.5
72
Gain
17.2
19.4
0.45
NF [1]
OP1dB
IIP3 [2]
S11
Noise Figure
dB
Output Power at 1dB Gain Compression
Input Third Order Intercept Point
Input Return Loss, 50 Ω source
Output Return Loss, 50 Ω load
Reverse Isolation
dBm
dBm
dB
17
S22
dB
S12
dB
S31
Isolation between RFin1 and RFin2
Maximum shutdown voltage required to turn ON LNA
Minimum shutdown voltage required to turn OFF LNA
Current at Vdd with Vsd = 0 V
Current at Vdd with Vsd = 3 V
Current at Vsd with Vsd = 0 V
Current at Vsd with Vsd = 3 V
Current at Vbias with Vsd = 0 V
Current at Vbias with Vsd = 3 V
dB
Vsd1,2 [3]
Vsd1,2 [3]
Idq [4]
V
V
1.6
mA
mA
mA
mA
mA
mA
58.6
0.01
4
Isd [4]
Ibias [4]
Notes:
220
2.3
1.61
1. Noise figure at the DUT RF Input pin, board losses are deembedded.
2. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
3. Vsd1 and Vsd2 are active LOW.
4. Refer to Figure 6 for more details.
2
Product Consistency Distribution Charts
USL
LSL
USL
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
45
50
55
60
65
70
75
Figure 1. Idd, LSL = 48 mA , nominal = 60.9 mA, USL = 72 mA
Figure 2. NF, nominal = 0.27 dB, USL = 0.45 dB
LSL
LSL
USL
16
17
18
19
20
21
22
23
24
16.9
17.2 17.5 17.8 18 18.2 18.5 18.8 19 19.2 19.5
Figure 3. IIP3, LSL = 17 dBm, nominal = 19.1 dBm
Figure 4. Gain, LSL = 17.2 dB, nominal = 18.4 dB, USL = 19.4 dB
Notes:
1. Distribution data sample size is 6500 samples taken from 12 different wafer lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
2. Circuit trace losses for NF have been de-embedded from measurements above.
3
Demo Board Layout
Demo Board Schematic
APRIL 2011
R9
R10
C24
C25
C8
C20
C3
C6
C2
C23
R3
C7
R4
R1
C1
L1
L3
C9
RFIN
RFOUT
C16
C19
L4
L2
C12
C21
R6
C13
R7
C22
R8
C26
Figure 6. Demo Board Schematic Diagram
MGA-16X16
Demoboard
(4-Port)
RO4350
DK 3.48
H 10mil
W 0.58mm
G 0.45mm
Rev 1
Figure 5. Demo Board Layout Diagram
Notes:
1. Recommended PCB material is 10 mils Rogers RO4350.
2. Suggested component values may vary according to layout and PCB material.
3. Input board loss at 900 MHz is 0.056 dB
4. The schematic is shown with the assumption that similar PCB is used for all MGA-16116, MGA-16216 and MGA-16316.
5. Detail of the components needed for this product is shown in Table 1.
6. R1 and R6 are for low frequency stability.
7. Bias to each LNA is adjustable using R3 and R8 (see Figure 6). Increasing R3 and R8 will reduce bias current (Idd) and vice-versa.
8. R9/R10 are stability improvement resistors that may not be needed in actual application. They are included in the demoboard to provide isolation
from power supply noise.
9. Center Paddle is grounded.
Table 1. Component list for 900 MHz matching
PART
Size
Value
Detail Part Number
GJM1555C1H200GB01
GRM155R71C104KA88D
GRM1555C1H101JD01E
GRM21BR60J475KA11L
GJM1555C1H120GB01
–
C1, C12
0402
0402
0402
0805
0402
0402
0402
0402
0402
0402
0402
0402
20 pF
C2, C13, C8, C22
C3, C9, C16, C19
C6, C20, C23, C34
C7, C21
0.1 mF
100 pF
4.7 mF
12 pF
C25, C26
L1, L2
NOT USED
68 nH
LQW15AN68NG00
LQW15ANR12J00
RK73B1ETTP510J
RK73B1ELTP152J
RK73B1ETTP0R0J
RK73B1ETTP100J
L3, L4
120 nH
51 ohm
1.5 kohm
0 ohm
10 ohm
R1, R6
R3, R8
R4, R7
R9, R10
4
Table 2. Below is the table showing the MGA-16116 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd = 4.8 V,
Idd = 35 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
Magnitude
0.51
Angle
44.1
34.9
46.5
40.0
86.4
IIP3 (dBm)
17.38
Gain (dB)
20.02
16.8
450
700
835
950
1450
0.643
22.09
0.643
25.18
15.1
0.386
23.20
16.62
14.39
0.514
25.77
Table 3. Below is the table showing the MGA-16116 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd = 4.8 V,
Idd = 60 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
Magnitude
0.514
Angle
43.2
40.5
57.6
20.0
92.9
IIP3 (dBm)
21.32
Gain (dB)
20.34
18.6
450
700
835
950
1450
0.39
23.15
0.515
26.90
16.1
0.386
26.71
16.31
13.98
0.643
29.83
Table 4. Below is the table showing the MGA-16116 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd = 4.8 V,
Idd = 75 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
Magnitude
0.128
Angle
59.8
30.1
149.9
180
IIP3 (dBm)
21.07
Gain (dB)
22.75
19.16
18.46
17.98
15.03
450
700
0.257
24.33
835
0.257
23.80
950
0.128
24.74
1450
Notes:
0.257
29.9
28.73
1. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
2. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
Notes:
1. Maximum OIP3 is measured on coplanar waveguide made on 0.010
inch thick ROGER 4350.
Figure 7. RFinput and RFoutput Reference Plane
5
Typical 900 MHz RF Performance Plots
RF performance at T = 25° C, Vdd = 4.8 V, Idd = 60 mA. Measurements made on single-ended amplifier in LNA mode
A
tuned to 900 MHz, using Figure 5 demoboard and Figure 6 circuit. Signal = CW unless stated otherwise. IIP3 test condition:
FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
26
24
22
20
18
16
14
12
100° C
25° C
100° C
25° C
-40° C
-40° C
450 550 650 750 850 950 1050 1150 1250 1350 1450
Frequency (MHz)
450 550 650 750 850 950 1050 1150 1250 1350 1450
Frequency (MHz)
Figure 8. NF vs Frequency vs Temperature [1]
Figure 9. Gain vs Frequency vs Temperature
25
24
23
22
21
20
19
18
24
22
20
18
16
14
12
100° C
100° C
25° C
-40° C
17
16
15
25° C
10
-40° C
8
450 550 650 750 850 950 1050 1150 1250 1350 1450
Frequency (MHz)
450
650
850
1050
1250
1450
Frequency (MHz)
Figure 10. IIP3 vs Frequency vs Temperature
Figure 11. OP1dB vs Frequency vs Temperature
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100° C
25° C
-40° C
-10
-20
-30
S(2,1)
-40
-50
-60
S(1,1)
S(2,2)
S(1,2)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
2
4
6
8
10 12 14 16 18 20
Frequency (GHz)
Frequency (GHz)
Figure 12. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency
Figure 13. Mu stability factors vs Frequency vs Temperature
6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-20
-25
-30
-35
-40
-45
-50
-55
-60
100° C
25° C
-40° C
0
2
4
6
8
10 12 14 16 18 20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Frequency (GHz)
Figure 14. Mu’ stability factors vs Frequency vs Temperature
Figure 15. Input Ports Isolation (S31) vs Frequency
70
60
50
40
30
20
10
0
90
85
80
75
70
65
60
55
50
45
40
100° C
25° C
-40° C
0
500
1000
1500
2000
2500
3000
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Rbias (ohm)
Vsd (V)
Figure 16. Idd vs Rbias [2]
Figure 17. Idd vs Vsd
Notes:
1. Circuit trace losses for NF have been de-embedded from measurements above.
2. Rbias is R3 and R8 from Figure 6.
7
Table 5. Typical Scattering Parameters, Vdd = 4.8 V, Idd = 35 mA
LNA SPAR (100 MHz – 20 GHz) The S-parameter are for single amplifier.
Freq
(GHz)
0.1
S11
(dB)
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
-1.022
-6.649
-8.297
-9.364
-9.758
-10.971
-11.091
-11.104
-11.117
-11.087
-11.081
-11.096
-11.006
-10.720
-10.073
-9.286
-8.439
-7.649
-9.206
-11.853
-11.268
-10.277
-11.155
-20.494
-22.385
-14.569
-12.363
-7.890
-12.876
-7.087
-4.516
-28.498
-94.870
-112.042
-125.539
-130.241
-151.257
-159.069
-166.151
-169.353
177.265
165.669
154.720
142.943
129.982
118.799
106.890
94.245
29.161
22.772
20.318
18.444
17.596
14.416
13.414
12.539
12.131
10.360
8.951
7.826
6.892
6.100
5.351
4.697
4.087
2.997
2.362
1.930
1.289
0.324
-0.159
-0.820
-0.683
-0.727
-1.734
-6.052
-5.846
-4.538
-4.779
154.654
104.259
93.331
84.974
81.438
66.113
60.566
55.320
52.718
40.267
28.433
16.983
5.622
-37.965
-26.459
-24.049
-22.211
-21.400
-18.221
-17.239
-16.328
-15.905
-14.104
-12.604
-11.325
-10.213
-9.244
-8.445
-7.735
-7.175
-6.183
-5.224
-4.263
-3.757
-3.704
-3.353
-3.505
-2.651
-2.279
-2.934
-6.607
-6.352
-4.669
-5.022
79.027
66.399
64.475
62.286
61.255
54.575
51.394
48.319
46.647
38.400
29.781
21.025
12.016
2.746
-7.090
-13.896
-15.882
-17.478
-17.917
-20.357
-21.981
-23.407
-23.978
-26.564
-27.136
-25.584
-23.963
-21.945
-19.977
-17.197
-14.231
-10.813
-10.533
-10.307
-8.627
-7.062
-6.702
-6.926
-6.999
-7.115
-5.770
-2.049
-2.285
-3.339
-4.579
-19.544
-50.600
-53.370
-54.610
-53.566
-53.259
-58.813
-64.718
-68.957
-97.344
-132.391
-162.526
170.627
142.320
114.528
88.526
70.377
52.241
46.694
43.266
20.267
-2.650
0.5
0.7
0.9
1.0
1.5
1.7
1.9
2.0
2.5
3.0
3.5
4.0
4.5
-5.563
5.0
-16.665
-27.610
-38.486
-58.517
-77.126
-96.806
-117.528
-136.898
-153.598
-168.479
171.235
147.438
115.001
131.616
90.393
103.243
55.113
-6.661
5.5
-16.237
-26.218
-44.375
-62.113
-81.118
-101.712
-120.862
-139.372
-153.688
-176.492
158.611
125.555
139.045
97.052
108.441
58.513
6.0
7.0
72.483
8.0
56.581
9.0
31.257
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-4.194
-26.164
-52.090
-61.926
-159.458
127.065
64.821
-18.056
-14.524
-18.503
-26.831
-43.836
-74.412
-68.870
-89.195
-112.660
-127.305
-10.894
108.141
31.361
Table 6. Typical Noise Parameters, for single amplifier, Vdd = 4.8 V, Idd = 35 mA
Freq
GHz
450
Fmin
dB
0.31
0.23
0.21
0.23
0.4
Γopt
Mag.
0.570
0.442
0.426
0.392
0.210
Γopt
Ang.
-15.8
4.9
R
n/50
0.039
0.035
0.034
0.035
0.037
700
835
25.7
34.6
86.0
950
1450
Notes:
1. The Fmin values are based on noise figure measurements at multiple input impedances using Focus source pull test system. From these
measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick ROGER 4350. The input reference plane is at the
end of the RFinput pin and the output reference plane is at the end of the RFoutput pin as shown in Figure 7.
3. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
8
Table 7. Typical Scattering Parameters, Vdd = 4.8 V, Idd = 60 mA
LNA SPAR (100 MHz – 20 GHz) The S-parameter are for single amplifier.
Freq
(GHz)
0.1
0.5
0.7
0.9
1.0
1.5
1.7
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
9.0
10
S11
(dB)
-1.074
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
-31.307
-99.051
-115.776
-128.775
-133.219
-153.458
-161.056
-167.985
-171.125
175.803
164.403
153.594
141.943
129.027
117.928
106.083
93.478
30.372
23.126
20.596
18.669
17.812
14.600
13.591
12.711
12.302
10.521
9.105
7.971
7.028
6.226
5.475
4.815
4.202
3.114
2.483
2.048
1.407
0.451
-0.038
-0.721
-0.599
-0.665
-1.681
-6.012
-5.844
-4.522
-4.758
152.301
101.761
91.484
83.583
80.178
65.392
60.010
54.875
52.304
40.088
28.417
17.073
5.853
-38.598
-26.683
-24.165
-22.241
-21.408
-18.141
-17.142
-16.230
-15.809
-13.992
-12.490
-11.217
-10.123
-9.162
-8.374
-7.680
-7.123
-6.153
-5.211
-4.265
-3.779
-3.736
-3.384
-3.563
-2.714
-2.345
-3.019
-6.652
-6.431
-4.710
-5.060
79.819
69.129
66.973
64.407
63.192
55.849
52.498
49.228
47.475
38.931
30.048
21.106
11.945
2.551
-8.582
-15.871
-17.771
-19.273
-19.593
-21.764
-23.571
-25.238
-25.944
-29.570
-30.232
-27.571
-25.227
-22.592
-20.256
-17.261
-14.249
-10.893
-10.730
-10.574
-8.835
-7.217
-6.823
-7.004
-7.040
-7.104
-5.734
-2.042
-2.257
-3.313
-4.528
-20.776
-48.167
-49.366
-49.337
-47.750
-45.214
-49.907
-55.033
-59.265
-90.923
-135.945
-170.069
162.620
135.000
108.170
83.874
67.156
50.129
45.175
42.707
20.126
-2.639
-7.419
-9.041
-10.023
-10.399
-11.500
-11.572
-11.538
-11.537
-11.445
-11.401
-11.399
-11.292
-10.974
-10.296
-9.477
-5.240
-16.254
-27.119
-37.909
-57.850
-76.469
-96.207
-116.940
-136.443
-153.270
-168.292
171.370
147.554
115.096
131.726
90.462
103.345
55.261
-6.976
-16.555
-26.573
-44.852
-62.621
-81.667
-102.196
-121.324
-139.868
-154.175
-176.815
158.380
125.379
139.053
96.994
108.465
58.580
-8.603
-7.784
71.674
-9.391
55.504
-12.116
-11.471
-10.440
-11.273
-20.959
-22.024
-14.309
-12.226
-7.911
29.799
-5.874
11
-27.549
-53.811
-65.754
-163.703
126.539
65.090
12
-17.959
-13.899
-17.790
-26.156
-43.382
-74.188
-68.762
-89.050
-112.266
13
14
15
16
17
-127.772
-10.792
108.026
31.259
18
-12.992
-7.042
19
20
-4.476
Table 8. Typical Noise Parameters, for single amplifier, Vdd = 4.8 V, Idd = 60 mA
Freq
GHz
450
700
835
Fmin
dB
0.31
0.23
0.21
0.23
0.42
Γopt
Mag.
0.557
0.438
0.460
0.423
0.172
Γopt
Ang.
-17.0
0.5
21.6
33.1
92.7
R
n/50
0.035
0.033
0.032
0.032
0.036
950
1450
Notes:
1. The Fmin values are based on noise figure measurements at multiple input impedances using Focus source pull test system. From these
measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick ROGER 4350. The input reference plane is at the
end of the RFinput pin and the output reference plane is at the end of the RFoutput pin as shown in Figure 7.
3. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
9
Table 9. Typical Scattering Parameters, Vdd = 4.8 V, Idd = 75 mA
LNA SPAR (100 MHz – 20 GHz) The S-parameter are for single amplifier.
Freq
(GHz)
0.1
S11
(dB)
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
-1.313
-33.530
-101.259
-117.752
-130.466
-134.737
-154.527
-162.032
-168.879
-171.996
175.184
163.899
153.195
141.576
128.688
117.634
105.823
93.240
31.014
23.314
20.741
18.790
17.925
14.699
13.689
12.807
12.394
10.608
9.189
8.048
7.102
6.296
5.542
4.879
4.265
3.176
2.549
2.104
1.463
0.508
0.015
-0.677
-0.566
-0.631
-1.666
-5.980
-5.842
-4.520
-4.751
150.648
100.420
90.485
82.841
79.542
65.015
59.715
54.640
52.113
40.041
28.441
17.188
6.023
-38.589
-26.803
-24.212
-22.239
-21.407
-18.111
-17.106
-16.185
-15.760
-13.941
-12.442
-11.174
-10.080
-9.126
-8.341
-7.655
-7.099
-6.142
-5.204
-4.274
-3.791
-3.751
-3.401
-3.589
-2.742
-2.383
-3.062
-6.667
-6.475
-4.751
-5.083
82.014
70.767
68.268
65.516
64.225
56.520
53.063
49.733
47.932
39.243
30.253
21.216
11.962
2.544
-9.661
-17.048
-18.831
-20.230
-20.421
-22.336
-24.200
-25.976
-26.759
-31.149
-32.084
-28.646
-25.816
-22.900
-20.389
-17.298
-14.261
-10.940
-10.846
-10.697
-8.928
-7.284
-6.889
-7.059
-7.048
-7.099
-5.710
-2.048
-2.253
-3.313
-4.500
-21.676
-45.449
-45.680
-44.960
-43.253
-39.860
-43.748
-48.172
-52.109
-84.360
-136.841
-173.768
158.924
131.803
105.521
81.989
65.816
49.294
44.633
42.499
20.087
-2.588
0.5
-7.873
0.7
-9.472
0.9
-10.402
-10.777
-11.805
-11.852
-11.792
-11.784
-11.656
-11.594
-11.581
-11.462
-11.124
-10.429
-9.589
1.0
1.5
1.7
1.9
2.0
2.5
3.0
3.5
4.0
4.5
-5.029
5.0
-15.972
-26.805
-37.559
-57.450
-76.083
-95.838
-116.574
-136.137
-153.014
-168.073
171.616
147.729
115.223
131.954
90.681
103.388
55.507
-7.041
5.5
-16.664
-26.672
-44.949
-62.770
-81.847
-102.332
-121.438
-139.971
-154.248
-176.860
158.332
125.393
139.243
97.145
108.605
58.833
6.0
-8.686
7.0
-7.862
71.395
8.0
-9.495
55.210
9.0
-12.268
-11.584
-10.522
-11.357
-21.178
-21.655
-14.145
-12.117
-7.916
29.175
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-6.517
-28.153
-54.514
-67.548
-166.052
126.771
65.327
-17.777
-13.574
-17.396
-25.793
-43.125
-74.067
-68.631
-88.879
-112.076
-127.952
-9.966
-13.009
-6.983
107.757
31.666
-4.463
Table 10. Typical Noise Parameters, for single amplifier, Vdd = 4.8 V, Idd = 75 mA
Freq
GHz
450
700
835
Fmin
dB
0.32
0.23
0.23
0.25
0.43
Γopt
Mag.
0.521
0.426
0.387
0.388
0.139
Γopt
Ang.
-18.1
-6.4
17.8
25.5
93.9
R
n/50
0.036
0.033
0.033
0.033
0.037
950
1450
Notes:
1. The Fmin values are based on noise figure measurements at multiple input impedances using Focus source pull test system. From these
measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick ROGER 4350. The input reference plane is at the
end of the RFinput pin and the output reference plane is at the end of the RFoutput pin as shown in Figure 7.
3. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
10
BALANCED MODE APPLICATION
Electrical Specifications
T = 25° C, Vdd1 = Vdd2 = 4.8 V, Idd1 = Idd2 = 60 mA at Rbias =1.5 kohm, RF performance at 900 MHz, CW operation
A
unless otherwise stated.
Symbol
Vdd
Idd
Parameter and Test Condition
Supply Voltage per amplifier
Supply Current per amplifier
Gain
Units
V
Typ.
4.8
mA
dB
60
Gain
NF
18.2
0.37
23.9
21.6
-24.1
-34.7
-23.1
Noise Figure
dB
OP1dB
IIP3
Output Power at 1dB Gain Compression
Input Third Order Intercept Point
Input Return Loss, 50 Ω source
Output Return Loss, 50 Ω load
Reverse Isolation
dBm
dBm
dB
S11
S22
dB
S12
dB
Balanced Amplifier Demo Board Layout
MGA-16X16 Demoboard
(2-Port)
Rev 1
RO4350
DK 3.48
H 10mil
R9
R10
C24
W 0.58mm
G 0.45mm
C20
C6
C2
C23
C25
C8
RFOUT
R3
C7
C5
R4
L3
R1
C1
C4
R5
X2
C11
C10
L1
L2
C3
C9
X1
C19
C16
L4
R7
C18
C21
C12
R6
C13
C17
C14
RFIN
C15
C22
C26
R8
R2
APRIL 2011
Figure 18. Balanced Amplifier Demo Board Layout Diagram
Notes:
1. Recommended PCB material is 10 mils Rogers RO4350.
2. Suggested component values may vary according to layout and PCB material.
3. Input board loss at 900 MHz is 0.133 dB.
11
Balanced Amplifier Demo Board Schematic
Figure 19. Balanced Amplifier Demo Board Schematic.
Table 11. Component list for 900 MHz matching
PART
Size
Value
Detail Part Number
C1, C12
0402
0402
0402
0805
0402
0402
0402
0402
0402
0402
0402
0402
0402
–
20 pF
GJM1555C1H200GB01
GRM155R71C104KA88D
GRM1555C1H101JD01E
GRM21BR60J475KA11L
GJM1555C1H120GB01
C2, C8, C13, C22
0.1 mF
100 pF
4.7 mF
12 pF
C3, C9, C16, C19
C6, C20, C23, C34
C7, C21
C4, C5, C10, C11, C14, C15, C17, C18, C25, C26
NOT USED
68 nH
120 nH
51 ohm
1.5 kohm
0 ohm
10 ohm
51 ohm
–
L1, L2
L3, L4
R1, R6
R3, R8
R4, R7
R9, R10
R2, R5
X1
LQW15AN68NG00
LQW15ANR12J00
RK73B1ETTP510J
RK73B1ELTP152J
RK73B1ETTP0R0J
RK73B1ETTP100J
RK73B1ETTP510J
X3C09P1-03S
X2
–
–
C0810J5003AHF
12
Typical 900 MHz RF Performance Plots on Balanced Mode
RF performance at T = 25° C, Vdd1 = Vdd2 = 4.8 V, Idd1 = Idd2 = 60 mA, LNA mode, measured on demo board in Figure
A
18. Signal is CW unless stated otherwise. Application Test Circuit is shown in Figure 19 and Table 11. IIP3 test condition:
FRF1-FRF2 = 1MHz with input power of -20 dBm per tone.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
26
24
22
20
18
16
14
12
100° C
25° C
100° C
25° C
-40° C
-40° C
450 550 650 750 850 950 1050 1150 1250
Frequency (MHz)
450 550 650 750 850 950 1050 1150 1250
Frequency (MHz)
Figure 20. NF vs Frequency vs Temperature[1]
Figure 21. Gain vs Frequency vs Temperature
26
24
22
20
18
16
14
28
100° C
27
25° C
-40° C
26
25
24
23
22
21
12
10
8
100° C
25° C
-40° C
20
450 550 650 750
850 950 1050 1150 1250
450 550 650 750 850 950 1050 1150 1250
Frequency (MHz)
Frequency (MHz)
Figure 22. IIP3 vs Frequency vs Temperature
Figure 23. OP1dB vs Frequency vs Temperature
30
20
10
0
-10
-20
-30
-40
-50
-60
S(2,1)
S(1,1)
S(2,2)
S(1,2)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Figure 24. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency
13
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100° C
25° C
100° C
25° C
-40° C
-40° C
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency (GHz)
Frequency (GHz)
Figure 25. Mu stability factors vs Frequency vs Temperature
Figure 26. Mu’ stability factors vs Frequency vs Temperature
Note:
1. Circuit trace losses for NF have been de-embedded from measurements above.
Part Number Ordering Information
Part Number
No. of Devices
100
Container
Antistatic Bag
7”Reel
MGA-16116-BLKG
MGA-16116-TR1G
1000
Package Dimensions
Pin ꢀ Dot
By marking
0.20 Ref.
2.ꢀ0
4.00 0.ꢀ0
Pin #ꢀ Identiꢂcation
Chamfer 0.30 X 45°
0.55
AVAGO
ꢀ6ꢀꢀ6
YYWW
XXXX
0.30
4.00 0.ꢀ0
2.ꢀ0
0.00 ꢁ0.05
0.85 0.ꢀ0
0.65
Bsc
BOTTOM VIEW
TOP VIEW
SIDE VIEW
14
Recommended PCB Land Pattern and Stencil Design
4.000
3.935
0.300
0.270
PIN #1
PIN #1
0.400
0.492
1.980
0.650
2.10 4.000
0.650
3.935
2.10
1.980
0.55
0.485
Stencil Opening
Land Pattern
4.000
0.650
4.000
2.100
Note :
1. ALL DIMENSIONS ARE IN MILIMETERS
2. 4mil stencil thickness is recommended
0.550
Combination of Land Pattern & Stencil Opening
Device Orientation
REEL
USER FEED DIRECTION
AVAGO
AVAGO
16116
YYWW
XXXX
AVAGO
16116
YYWW
XXXX
16116
YYWW
XXXX
CARRIER
TAPE
USER
FEED
DIRECTION
TOP VIEW
END VIEW
COVER TAPE
15
Tape Dimensions
2.00 0.05
8.00 0.10
4.00 0.10
Ø 1.50 0.10
1.75 0.10
5.50 0.05
12.0 0.30
–0.10
Ø1.50 0.25
0.279 0.02
10° MAX
10° MAX
4.25 0.10
4.25 0.10
1.13 0.10
A.
K.
B.
16
Reel Dimensions – 7 inch
6.2ꢀ mm EMBOSSED LETTERS
LETTERING THICKNESS: 1.6 mm
SLOT HOLE "a"
SEE DETAIL "X"
SLOT HOLE "b"
Ø 178.0 0.ꢀ
FRONT
BACK
6
PS
SLOT HOLE (2x)
180° APART.
6
PS
SLOT HOLE "a": 3.0 0.ꢀ mm (1x)
SLOT HOLE "b": 2.ꢀ 0.ꢀ mm (1x)
FRONT VIEW
RECYCLE LOGO
1.ꢀ MIN.
+1.ꢀ*
12.4
+0.ꢀ
-0.2
Ø 13.0
-0.0
R10.6ꢀ
Rꢀ.2
Ø 20.2 MIN.
FRONT
BACK
DETAIL "X"
3.ꢀ
DETAIL "Y"
(Slot Hole)
Ø 178.0 0.ꢀ
Ø ꢀ1.2 0.3
EMBOSSED RIBS
RAISED: 0.2ꢀ mm, WIDTH: 1.2ꢀ mm
18.0*
MAX.
SEE DETAIL "Y"
BACK VIEW
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-3721EN - October 31, 2012
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