CEDM7001E [CENTRAL]
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET; 表面贴装的N-沟道增强型MOSFET硅
| 型号： | CEDM7001E |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| 文件： | 总2页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CEDM7001E
Central
Semiconductor Corp.
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001E is an
Enhancement-mode N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS Process, designed for
high speed pulsed amplifier and driver applications.
This MOSFET offers Low r
and Low Theshold Voltage.
DS(on)
FEATURES:
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm,
SOT-883L Leadless Surface
Mount Package
• Power Dissipation 100mW
• Low Package Profile, 0.4mm
• Low r
DS(on)
Top View
Bottom View
SOT-883L CASE
MARKING CODE: CEDM7001E:
E
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter
Circuits
• Battery Powered Portable
Equipment
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
V
Drain-Source Voltage
V
V
20
10
DS
GS
Gate-Source Voltage
V
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
I
100
200
100
mA
mA
mW
D
D
D
I
P
Operating and Storage
Junction Temperature
T , T
stg
-65 to +150
°C
J
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.0
UNITS
µA
µA
µA
V
I
V
V
V
V
V
V
V
V
V
V
V
V
=10V, V =0V
DS
=10V, V =0V
GSSF
GS
GS
DS
GS
I
1.0
1.0
GSSR
DS
I
=20V, V =0V
GS
=0V, I =100µA
DSS
BV
20
DSS
D
V
=V , I =250µA
0.6
0.9
2.0
V
GS(th)
DS GS D
r
=4.0V, I =100mA
D
=10V, I =100mA
1.0
Ω
DS(ON)
GS
DS
DS
DS
DS
DD
DD
Y
100
mS
pF
pF
pF
ns
fs
D
C
=3.0V, V =0, f=1.0MHz
GS
=3.0V, V =0, f=1.0MHz
TBD
TBD
TBD
TBD
TBD
rss
C
iss
GS
C
=3.0V, V =0, f=1.0MHz
GS
=3.0V, V =2.5V, I =10mA
oss
t
on
GS
D
t
=3.0V, V =2.5V, I =10mA
ns
off
GS
D
R1 (16-March 2007)
CEDM7001E
TM
Central
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
Semiconductor Corp.
SOT-883L - MECHANICAL OUTLINE
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
R1 (16-March 2007)
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