CMLT3906EBKPBFREE [CENTRAL]
暂无描述;
| 型号： | CMLT3906EBKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLT3904E NPN
CMLT3906E PNP
CMLT3946E NPN/PNP
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
DESCRIPTION:
TM
COMPLEMENTARY PICOmini
The Central Semiconductor CMLT3904E (two single
NPN), CMLT3906E (two single PNP), and
SILICON TRANSISTORS
CMLT3946E
(one
each
NPN
and
PNP
complementary) are combinations of enhanced
specification transistors in a space saving SOT-563
package, designed for small signal general purpose
amplifier and switching applications.
ENHANCED SPECIFICATIONS:
♦ BV
♦ BV
from 40V min to 60V min. (PNP)
from 5.0V min to 6.0V min. (PNP)
CBO
EBO
SOT-563 CASE
♦ V
from 0.3V max to 0.2V max.(NPN),
CE(SAT)
from 0.4V max to 0.2V max.(PNP)
from 60 min to 70 min. (NPN/PNP)
MARKING CODES: CMLT3904E: L04
CMLT3906E: L06
♦ h
FE
CMLT3946E: L46
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation
V
V
V
60
40
6.0
200
350
300
150
CBO
CEO
EBO
♦
♦
I
mA
C
P
P
P
mW (Note 1)
mW (Note 2)
mW (Note 3)
D
D
D
Power Dissipation
Operating and Storage
Junction Temperature
T , T
stg
-65 to +150
357
°C
°C/W
J
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
NPN
TYP
-
PNP
TYP
-
90
55
SYMBOL
TEST CONDITIONS
=30V, V =3.0V
MIN
-
60
40
6.0
MAX
50
-
UNITS
nA
V
I
V
CEV
CBO
CEO
EBO
CE
I =10µA
EB
BV
BV
BV
115
60
7.5
0.057
0.100
0.75
0.85
240
235
♦
♦
C
I =1.0mA
-
V
C
I =10µA
E
C
7.9
V
V
V
V
♦ V
♦ V
V
I =10mA, I =1.0mA
0.050
0.100
0.75
0.85
130
150
0.100
0.200
0.85
CE(SAT)
B
I =50mA, I =5.0mA
CE(SAT
C
B
)
I =10mA, I =1.0mA
0.65
BE(SAT
BE(SAT
FE
C
C
B
B
)
)
V
I =50mA, I =5.0mA
0.95
V
h
♦ h
V
V
=1.0V, I =0.1mA
90
100
♦
CE
CE
C
=1.0V, I =1.0mA
FE
C
♦ Enhanced specification.
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2
R2 (13-December 2003)
CMLT3904E NPN
CMLT3906E PNP
CMLT3946E NPN/PNP
TM
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS (continued)
NPN
TYP
215
110
50
PNP
TYP
150
120
55
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
h
h
h
V
V
V
=1.0V, I =10mA
C
100
300
FE
FE
FE
CE
CE
=1.0V, I =50mA
70
30
300
♦
C
=1.0V, I =100mA
CE
C
f
C
C
V
=20V, I =10mA, f=100MHz
MHz
pF
pF
T
CE
C
V
V
V
V
V
V
V
=5.0V, I =0, f=1.0MHz
4.0
8.0
12
10
400
60
ob
ib
ie
re
fe
oe
CB
E
=0.5V, I =0, f=1.0MHz
BE
CE
CE
CE
CE
CE
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.1
100
1.0
kΩ
C
-4
=10V, I =1.0mA, f=1.0kHz
X10
C
=10V, I =1.0mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
µmhos
dB
C
NF
=5.0V,I =100µA, R =1.0KΩ,
4.0
C
S
f=10Hz to 15.7kHz
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
35
35
200
50
ns
ns
ns
ns
d
r
CC
CC
CC
CC
BE B1
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
C
t
t
=3.0V, I =10mA, I =I =1.0mA
s
C
C
B1 B2
B1 B2
=3.0V, I =10mA, I =I =1.0mA
f
♦ Enhanced specification.
SOT-563 - MECHANICAL OUTLINE
D
E
E
A
6
5
4
B
G
F
1
2
3
C
H
R0
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
CMLT3904E
CMLT3946E
CMLT3906E
MARKING CODE: L04
MARKING CODE: L06
MARKING CODE: L46
R2 (13-December 2003)
相关型号：
CMLT3906EGBK
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6
CENTRAL
CMLT3906EGTR
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6
CENTRAL
CMLT3906ELEADFREE
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, PICOMINI-6
CENTRAL
CMLT3906ETR
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, PICOMINI-6
CENTRAL
©2020 ICPDF网 联系我们和版权申明