CMLT3906EGBK [CENTRAL]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6;
| 型号： | CMLT3906EGBK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
Semiconductor Corp.
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
combinations of dual, enhanced specification transistors
in a space saving SOT-563 package, designed for small
signal general purpose amplifier and switching
applications.
ENHANCED SPECIFICATION
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
MARKING CODES: CMLT3904E:
CMLT3906E:
L04
L06
L46
C4G
C6G
46G
CMLT3946E:
CMLT3904EG*:
CMLT3906EG*:
CMLT3946EG*:
SOT-563 CASE
Device is Halogen Free by design
*
ENHANCED SPECIFICATIONS:
♦ BV
♦ BV
from 40V MIN to 60V MIN (PNP)
from 5.0V MIN to 6.0V MIN (PNP)
from 60 MIN to 70 MIN (NPN/PNP)
♦ V
CE(SAT)
from 0.3V MAX to 0.2V MAX(NPN)
from 0.4V MAX to 0.2V MAX(PNP)
CBO
EBO
♦ h
FE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
♦
♦
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
60
40
6.0
V
CBO
CEO
EBO
V
V
Collector Current
I
200
350
300
150
mA
mW
mW
mW
°C
C
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
P
P
P
D
D
D
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN
PNP
SYMBOL
CEV
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
I
V
=30V, V =3.0V
-
-
-
50
-
nA
CE EB
♦
BV
BV
BV
I =10μA
60
40
6.0
-
115
60
90
55
V
V
V
V
V
V
V
CBO
CEO
EBO
C
I =1.0mA
-
C
♦
♦
♦
I =10μA
7.5
7.9
-
E
V
V
V
V
I =10mA, I =1.0mA
0.057
0.100
0.75
0.85
240
235
215
110
50
0.050 0.100
0.100 0.200
0.75
0.85
130
150
150
120
55
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
C
B
B
B
B
I =50mA, I =5.0mA
-
I =10mA, I =1.0mA
0.65
-
90
100
100
70
30
0.85
0.95
-
C
I =50mA, I =5.0mA
C
♦
♦
h
h
FE
V
=1.0V, I =0.1mA
CE
C
V
=1.0V, I =1.0mA
-
FE
CE
C
h
V
=1.0V, I =10mA
300
CE
V
C
♦
h
=1.0V, I =50mA
-
-
FE
CE
C
h
V
=1.0V, I =100mA
FE
CE
C
♦ Enhanced Specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2
R3 (23-January 2009)
TM
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
300
MAX
UNITS
MHz
pF
f
C
C
V
V
V
V
V
V
V
V
=20V, I =10mA, f=100MHz
T
ob
ib
CE
CB
BE
CE
CE
CE
CE
CE
C
=5.0V, I =0, f=1.0MHz
4.0
8.0
12
10
400
60
E
=0.5V, I =0, f=1.0MHz
pF
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.1
100
1.0
kΩ
ie
re
fe
C
-4
x10
=10V, I =1.0mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
μS
dB
oe
C
NF
=5.0V, I =100μA, R =1.0kΩ
4.0
C
S
f=10Hz to 15.7kHz
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
35
35
200
50
ns
ns
ns
ns
d
r
s
f
CC
CC
CC
CC
BE B1
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
C
=3.0V, I =10mA, I =I =1.0mA
B1 B2
C
C
=3.0V, I =10mA, I =I =1.0mA
B1 B2
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
CMLT3904E
CMLT3904EG*
CMLT3906E
CMLT3906EG*
CMLT3946E
CMLT3946EG*
Device is Halogen Free by design
*
R3 (23-January 2009)
相关型号：
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Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6
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CMLT3906ELEADFREE
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, PICOMINI-6
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