CHM50N06NPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM50N06NPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM50N06NPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 50 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
D2PAK
FEATURE
* Small package. (D2PAK)
0.420(10.67)
0.380(9.69)
0.190(4.83)
* Super high dense cell design for extremely low RDS(ON).
0.160(4.06)
0.055(1.40)
* High power and current handing capability.
0.245(6.22)
0.045(1.14)
MIN.
K
0.055(1.40)
0.047(1.19)
CONSTRUCTION
* N-Channel Enhancement
3
1
2
0.110(2.79)
0.025(0.64)
0.018(0.46)
0.110(2.79)
0.080(2.03)
0.090(2.29)
0.100(2.54)
0.095(2.41)
0.037(0.940)
0.027(0.686)
D
(3)
1 Gate
CIRCUIT
2 Source
3 Drain ( Heat Sink )
(1)
G
Dimensions in inches and (millimeters)
D2PAK
(2)
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM50N06NPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
60
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
50
150
131
ID
A
(Note 3)
PD
TJ
W
°C
°C
Maximum Power Dissipation at Tc = 25°C
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
2008-01
RATING CHARACTERISTIC CURVES ( CHM50N06NPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
60
DSS
I
Zero Gate Voltage Drain Current
VDS = 54 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
2
4
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
mΩ
14
19
22
V
GS=10V, I =50A
D
gFS
S
VDS =10V, ID = 25A
Dynamic Characteristics
Ciss
1420
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
400
50
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
28.2 37.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=48V, I
GS=10V
D
=48A
nC
nS
Qgs
8.5
7
gd
Q
ton
tr
Turn-On Time
Rise Time
17.2 34.4
VDD
30V
=
5
10
65
20
,
D
I = 48A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
32.5
10
Ω
GEN= 7.5
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
50
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 50A
GS
(Note 2)
VSD
1.5
V
V
= 0 V
相关型号：
©2020 ICPDF网 联系我们和版权申明