CHT4126WPT [CHENMKO]
General Purpose Transistor; 通用晶体管
| 型号： | CHT4126WPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | General Purpose Transistor |
| 文件： | 总4页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT4126WPT
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 25 Volts CURRENT 200 mAmpere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
SC-70/SOT-323
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
0.65
1.3±0.1
2.0±0.2
0.65
CONSTRUCTION
0.3±0.1
1.25±0.1
* PNP Silicon Transistor
MARKING
* DW
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
(3) C
2.0~2.45
CIRCUIT
(1)
B
(2)E
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
-25
UNIT
−
−
−
−
−
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
open base
-25
-4
V
open collector
V
-200
300
mA
mW
Ptot
Tamb ≤ 25 °C; note 2
Tstg
Tj
storage temperature
−65
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
+150
2004-8
Note
2. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT4126WPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
PARAMETER
CONDITIONS
MIN.
-25
MAX.
UNIT
V
V
V
−
−
−
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
IC = -10uA ; IE = 0A
IC = -1mA ; IB = 0A
IE = -10uA ; IC = 0A
IE = 0; VCB = -20 V
IC = 0; VEB = - 3 V
-25
-4
−
-50
-50
nA
nA
IEBO
emitter cut-off current
−
hFE
DC current gain
= -50 mA; VCEI= -1V; note 3
IC
IC = -2 mA; VCE = -1V
C = -50 mA; IB = -5 mA
IC = -50 mA; IB = -5 mA
−
60
120
−
hFE
DC current gain
360
-400
-950
VCEsat
collector-emitter saturation
I
mV
−
mV
pF
VBEsat
Cobo
Cibo
fT
base-emitter saturation voltage
output capacitance
IE = ie = 0; V
; f = 1 MHz −
CB = - 5 V
CB = - 5 V
4.5
10
input capacitance
IE = ie = 0; V
; f = 1 MHz −
pF
transition frequency
IC = -10mA; VCE = - 2 0 V ;
250
−
MHz
f = 100 MHz
Note
3. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT4126WPT )
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.3
0.25
0.2
250
200
150
100
50
V
= 1.0V
β = 10
CE
125 °C
0.15
0.1
25 °C
25 °C
125°C
- 40 °C
0.05
0
- 40 °C
1
10
100 200
0.1 0.2
0.5
1
2
5
10 20
50 100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
β = 10
- 40 °C
1
0.8
0.6
0.4
0.2
0
- 40 °C
25 °C
125 °C
25 °C
125 °C
V
= 1V
CE
1
10
100
200
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
V
= 25V
CB
10
8
C
obo
6
1
C
4
ibo
0.1
2
0.01
0
0.1
25
50
75
100
125
1
10
TA - AMBIE NT TEMP ERATURE ( C)
°
REVERSE BIAS VOLTAGE (V)
RATING CHARACTERISTIC CURVES ( CHT4126WPT )
Typical Characteristics
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
5
4
3
2
1
0
12
VCE = 5.0V
VCE = 5.0V
f = 1.0 kHz
10
8
I
= 1.0 mA
C
I
= 100 µA, R = 200Ω
6
C
S
4
I
I
= 1.0 mA, R = 200Ω
C
C
S
I
= 100 µA
C
2
= 100 µA, R = 2.0 kΩ
S
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
- SOURCE RESISTANCE (
)
kΩ
S
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
100
500
100
t
t
s
off
I
c
t
I B1
=
t
on
f
10
t
on
VBE(OFF)= 0.5V
I
10
1
10
1
t
r
I
c
c
t
IB1= IB2
=
IB1= IB2
=
off
10
10
t
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
100
I
I
- COLLECTOR CURRENT (mA)
C
Output Admittance
Current Gain
1000
500
1000
100
10
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
200
100
50
20
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
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