CHT5401WPT [CHENMKO]
PNP SILICON Transistor; PNP硅晶体管
| 型号： | CHT5401WPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP SILICON Transistor |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT5401WPT
SURFACE MOUNT
PNP SILICON Transistor
VOLTAGE 150 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-70/SOT-323
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* Suitable for high packing density.
0.65
CONSTRUCTION
1.3±0.1
2.0±0.2
0.65
* PNP transistors in one package.
0.3±0.1
1.25±0.1
MARKING
* CW
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
(3) C
2.0~2.45
CIRCUIT
(1)
B
(2)E
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
-160
UNIT
V
−
−
−
VCEO
VEBO
collector-emitter voltage
emitter-base voltage
open base
-150
-5.0
V
open collector
V
IC
−
mA
collector current (DC)
total power dissipation
-200
W
Ptot
Tstg
−
0.2
Tamb ≤ 25 °C; note 1
−65
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−65
+150
Note
2004-11
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT5401WPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
420
K/W
1.Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
PARAMETER
collector cut-off current
emitter cut-off current
CONDITIONS
CB= -120 V
VEB=3.0V
I = -1.0 mA; VCE
MIN.
MAX.
-50
UNIT
V
−
−
nA
nA
-50
= -5V
50
60
50
−
C
hFE
DC current gain
IC = -10mA; VCE = -5V
IC = -50 mA; VCE = -5V
240
−
−
-0.2
V
V
V
VCEsat
collector-emitter saturation
voltage
IC = -10 mA; IB = -1.0 mA
IC =--50 mA; IB = -5.0 mA
IC =-10mA; IB=-1.0mA
−
−
−
-0.5
-1.0
-1.0
6.0
VBEsat
base-emitter saturation voltage
collector capacitance
IC =--50 mA; IB = -5.0 mA
IE = ie = 0; VCB = - 1 0 V; f = 1 MHz
V
−
Cob
hfe
pF
VCE=-10V,IC=-1.0mA,f=1.0KHz
40
200
300
8.0
IC =- 50 mA; VCE = 1 0 V;
f = 100 MHz
fT
transition frequency
100
MHz
dB
I
C = 200 µA; V
; R = 1 0 Ω;
S
CE= 5 V
Hz to 15.7KHz
F
noise Þgure
−
f =10
相关型号：
©2020 ICPDF网 联系我们和版权申明