CHT5946PT [CHENMKO]
VOLTAGE 50Volts CURRENT 5 Ampere; 电压50Volts电流5安培
| 型号： | CHT5946PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | VOLTAGE 50Volts CURRENT 5 Ampere |
| 文件： | 总3页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT5946PT
SURFACE MOUNT
NPN SiliconTransistor
VOLTAGE 50Volts CURRENT 5 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-59/SOT-346
FEATURE
* Surface mount package. (SC-59/SOT-346)
* Suitable for high packing density.
(2)
CONSTRUCTION
(3)
0.95
2.7~3.1
0.95
(1)
1.7~2.1
*NPN Silicon Transistor
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0~0.1
0.3~0.6
(3)
C
CIRCUIT
2.1~2.95
(1)
B
E(2)
Dimensions in millimeters
SC-59/SOT-346
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
80
UNIT
−
−
−
V
V
V
VCEO
VEBO
collector-emitter voltage
emitter-base voltage
open base
50
6
open collector
IC
collector current (DC)
total power dissipation
−
A
5
mW
mW
−
300
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
Ptot
Tstg
−
625
T
−55
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
40
Tamb
operating ambient temperature
−55
+150
2005-11
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. Maximum power dissipation is calcuming that the device is mounted on
a ceramic substrate measuring 15x15x0.6mm
RATING CHARACTERISTIC CURVES ( CHT5946PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-c
PARAMETER
CONDITIONS
note 2
VALUE
200
UNIT
°
thermal resistance from junction to ambien
thermal resistance from junction to case
C/W
C/W
°
note 2
115
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
MIN.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MAX.
0.5
UNIT
collector cut-off current
VCB = 80V,IE=0
−
−
−
uA
uA
VCE=40V,IB=0
0.5
0.5
ICEO
collector cut-off current
emitter cut-off current
IEBO
uA
VEB=6V ,IC=0
IC = 10 mA; VCE = 2V
200
200
600
hFE
DC current gain
I = 500 mA; VCE
=2V
C
560
collector-emitter saturation
voltage
IC = 1000 mA; IB = 50 mA
IC = 2000 mA; IB = 100 mA
−
−
V
V
0.14
0.24
VCE(sat)
VBE(sat)
base-emitter saturation voltage
−
IC = 2000 mA; IB = 50 mA
IE = 0 ; VCB = 1 0 V; f = 1 M H Z
IC = -500 mA; VCE = 1 0 V;
V
1.0
pF
−
Cob
fT
collector output capacitance
15(typ)
MHz
−
400(typ)
transition frequency
Note :
Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT5946PT )
DC Current Gain vs Collector Current
Collector Emitter Saturation Voltage vs cOllector Current
10000
1000
100
10
IC/IB = 20
1000
100
10
0.01
0.1
1
10
0.01
0.1
1
10
IC䇭䋺䇭COLLECTOR CURRENT ( A )
IC䇭䋺䇭COLLECTOR CURRENT ( A )
Transistion Frequencyvs Emitter Current
Base Emitter Saturation Voltage vs cOllector Current
1000
10000
VCE = 10V
IC/IB = 50
100
1000
10
0.01
100
0.01
0.1
1
0.1
1
10
IC䇭䋺䇭COLLECTOR CURRENT ( A )
IE䇭䋺䇭EMITTER CURRENT ( -A )
Output Capactance vs Reverse Biae Voltage
Power Dissipation vs Operating Ambient Temperature
800
1000
100
10
f = 1MHz
700
600
500
400
300
200
100
0
1
0
20
40
60
80
100
120
140 160
0.1
1
10
100
Operating Ambient Temperature ( C)
°
VCB䇭䋺䇭REVERSE BIAS VOLTAGE ( V )
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