CHT5824XPT [CHENMKO]
NPN Silicon Transisto r; NPN硅Transisto ř
| 型号： | CHT5824XPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Silicon Transisto r |
| 文件： | 总2页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT5824XPT
SURFACE MOUNT
NPN SiliconTransistor
VOLTAGE 60Volts CURRENT 3 Ampere
FEATURE
*Surface mount package. (SC-62/SOT-89)
*High speed switching
*Low saturation voltage
SC-62/SOT-89
*Strong discharge power for inductive load and capacitance load
4.6MAX.
1.7MAX.
1.6MAX.
0.4+0.05
+0.08
0.45-0.05
+0.08
+0.08
0.40-0.05
0.40-0.05
1.50+0.1
1.50+0.1
1
2
3
1 Base
2 Collector ( Heat Sink )
3 Emitter
(2)
C
CIRCUIT
(1)
B
E(3)
Dimensions in millimeters
SC-62/SOT-89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
−
−
−
60
60
6
V
V
V
VCEO
VEBO
collector-emitter voltage
emitter-base voltage
open base
open collector
IC
collector current (DC)
total power dissipation
−
A
3
mW
mW
−
500
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
Ptot
Tstg
−
2000
T
−55
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−55
+150
2007-06
Note
1. Pw=100mS
2. Each terminal mounted on a recommended land.
RATING CHARACTERISTIC CURVES ( CHT5824XPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
MIN.
SYMBOL
ICBO
PARAMETER
CONDITIONS
VCB = 40V,IE=0
MAX.
1.0
UNIT
uA
collector cut-off current
−
uA
uA
−
−
VCE=50V,IB=0
VEB=4V ,IC=0
1.0
1.0
ICEO
collector cut-off current
emitter cut-off current
IEBO
hFE
IC = 100 mA; VCE = 2V
120
DC current gain
390
collector-emitter saturation
voltage
VCE(sat)
−
IC = 2000 mA; IB = 200 mA
V
0.5
pF
−
IE = 0 ; VCB = 1 0 V; f = 1 M H Z
Cob
collector output capacitance
20(typ)
IC = 100 mA; VCE = 1 0 V
f = 1 0 M H Z
MHz
−
fT
200(typ)
transition frequency
Note :
Pulse test: tp ≤ 300uSec; δ ≤
0.02.
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