CHT589PT [CHENMKO]
PNP Silicon Transistor; PNP硅晶体管
| 型号： | CHT589PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Silicon Transistor |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT589PT
SURFACE MOUNT
PNP Silicon Transistor
VOLTAGE 30 Volts CURRENT 1 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
FEATURE
* Small surface mounting type. (SOT-23)
* High current (Max.=200mA).
* Suitable for high packing density.
(1)
(2)
* High saturation current capability.
* Voltage controlled small signal switch.
(3)
CONSTRUCTION
(
)
(
)
.055 1.40
.028 0.70
* PNP Silicon Transistor
MARKINTG
589
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
(
)
.045 1.15
(3)
C
CIRCUIT
(
)
.033 0.85
(1)
B
(2)
E
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
UNIT
-50
-30
-5
V
V
V
A
A
−
−
−
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
open collector
−
-1
ICM
IBM
−
-2
−
-200
500
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−
−55
+150
+150
+150
°C
−
Tamb
−55
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT589PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
357
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
CONDITIONS
IE = 0; VCB = -30 V
MIN.
MAX.
-100
UNIT
collector cut-off current
−
−
nA
nA
IC
= 0; V
-100
emitter cut-off current
EB = - 4 V
= -2V
−
300
100
current gain
DC
IC
= -1 mA; VCE
= -2V
IC = -500mA; VCE
100
80
−
−
= - 2V
= -1A; VCE
IC
IC
40
CE = -2V
= -2A; V
VCEsat
collector-emitter saturation
voltage
−
V
Ic = -0.5A; IB=-50mA
Ic = -1A; IB=-100mA
IC = -2A; IB = -200 mA
-0.25
-0.35
-0.65
−
−
V
V
VBEsat
IC = -1A; IB = -100 mA
IC = -1A; VCE = -2V
−
V
-1.2
base-emitter saturation voltage
VBEon
Cobo
−
−
base-emitter turn-on voltage
output capacitance
V
-1.1
15
= -10V; = 1 MHz
pF
VCB
f
IC = -100 mA; VCE = - 5 V;
f = 100 MHz
100
−
fT
transition frequency
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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