CEFB102-G [COMCHIP]
SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器型号: | CEFB102-G |
厂家: | COMCHIP TECHNOLOGY |
描述: | SMD Efficient Fast Recovery Rectifier |
文件: | 总2页 (文件大小:127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Efficient Fast Recovery Rectifier
CEFB101-G Thru CEFB105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
SMB / DO-214AA
Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
Super fast recovery time for high efficient
Built-in strain relief
0.185(4.70)
0.160(4.06)
Low forward voltage drop
0.012(0.31)
0.006(0.15)
Mechanical Data:
0.096(2.44)
0.083(2.13)
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Approx. Weight: 0.063 gram
0.008(0.20)
0.203(0.10)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics:
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Symbol CEFB101-G CEFB102-G CEFB103-G CEFB104-G CEFB105-G
Unit
V
50
100
200
400
400
280
600
VRRM
VDC
V
50
35
100
70
200
140
600
420
VRMS
V
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
IFSM
A
30
A
V
Max. Average Forward Current
Io
1.0
Max. Instantaneous Forward Voltage
at 1.0A
VF
Trr
0.875
25
1.1
35
1.25
50
Reverse recovery time
nS
Max. DC Reverse Current at Rated DC
Ta=25oC
IR
uA
Blocking Voltage
5.0
200
Ta=100oC
R
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
oC/W
oC
13
150
JL
Tj
oC
TSTG
-55 to +150
Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm2 copper pad areas.
“-G” suffix designates RoHS compliant Version
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SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G)
Fig.2 - Forward Characteristics
Fig.1- Reverse Characteristics
100
10
1.0
0.1
CEFB101-G ~ 103-G
CEFB104-G
10
1.0
CEFB105-G
0.1
0.01
Pulse width 300uS
4% duty cycle
0.01
0
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
15 30 45 60 75 90 105 120 135 150
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig.4 - Non Repetitive Forward
Surge Curre
f=1MHz and applied
4VDC reverse voltage
CEFB104-G ~ 105-G
CEFB104-G ~ 105-G
0.01
0.1
1.0
10
100
Number of Cycles at 60Hz
Fig. 6 - Current Derating Curve
Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
trr
NONINDUCTIVE
NONINDUCTIVE
D.U.T.
Single Phase
OSCILLISCOPE
Half Wave 60Hz
0
25
50 75
100 125 150 175
1cm
Ambient Temperature
SET TIME BASE FOR
50 / 10ns / cm
NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF.
2. Rise Time = 10ns max., Source Impedance = 50 ohms.
“-G” suffix designates RoHS compliant Version
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