CAS300M12BM2 [CREE]
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module;
| 型号： | CAS300M12BM2 |
| 厂家： | 
CREE, INC |
| 描述： | 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module |
| 文件： | 总8页 (文件大小：849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CAS300M12BM2
1.2kV, 5.0 mΩ All-Silicon Carbide
Half-Bridge Module
Z-FET™ MOSFET and Z-Rec™ Diode
VDS
= 1.2 kV
Esw,Total@300A
RDS(on)
= 12.0 mJ
= 5.0 mΩ
Module Features
Package
62 mm x 106 mm x 30 mm
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, fail-safe device operation
Ease of paralleling
Copper baseplate and aluminum nitride insulator
System Benefits
Enables compact and lightweight systems
High efficiency operation
Mitigates over-voltage protection
Reduces thermal requirements
Enables simplified topologies
Applications
Induction Heating
Motor Drives
Solar and Wind Inverters
UPS and SMPS
Traction
Part Number
Package
Marking
CAS300M12BM2
Half Bridge Module
CAS300M12BM2
Maximum Ratings (TC = 25°C unless otherwise specified)
Note
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain – Source Voltage
Gate – Source Voltage
Gate – Source Voltage
1.2
-10/+25
-5/+20
404
kV
V
V
A
A
Absolute maximum values
Recommended operational values
VGS = 20 V, TC = 25 °C
VGS = 20 V, TC = 90 °C
Pulse width tP = 200 µs repetition rate
limited by TJ(max), TC = 25°C
Fig 20
ID
Continuous Drain Current
Pulsed Drain Current
285
IDpulse
1500
A
TJmax
TC
Junction Temperature
Case and Storage Temperature
Range
Maximum Power Dissipation
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
Clearance Distance
150
-40 to
+125
1660
4.0
14
5
300
12
30
°C
°C
Tstg
Ptot
Visol
Lstray
M
W
kV
nH
Nm
g
mm
mm
mm
TC = 25 °C, TJ = 150 °C
AC, 50 Hz, 1 min
Measured between terminals 2 and 3
To heatsink and terminals
G
Terminal to terminal
Terminal to terminal
Terminal to baseplate
Creepage Distance
40
1
Electrical Characteristics (TC = 25°C unless otherwise specified)
Value
Typ
Symbol
Parameter
Unit
Test Conditions
Notes
Min
Max
Drain – Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
1.2
kV
V
VGS = 0 V, IDS = 1 mA
VDS = 10 V, IDS = 15 mA
Fig 11
2.0
2.3
500
2000
VDS = 1.2 kV, VGS = 0 V
VDS = 1.2 kV, VGS = 0 V
TJ = 150 °C
VGS = 20 V, VDS = 0 V
VGS = 20 V, IDS = 300 A
VGS = 20 V, IDS = 300 A,
TJ = 150 °C
Zero Gate Voltage
Drain Current
IDSS
µA
nA
1000
IGSS
Gate-Source Leakage Current
1
5.0
100
5.7
Drain-Source On-State
Resistance
Fig 4, 5
and 6
RDS(on)
mΩ
8.6
9.8
94.8
93.3
VDS = 20 V, IDS = 300 A
VDS = 20 V, IDS = 300 A,
TJ = 150 °C
Fig 7
gfs
Transconductance
S
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
11.7
2.55
0.07
VDS = 600 V f = 200 kHz,
VAC = 25 mV
Fig 17,
18
nF
VDD = 600 V, VGS = -5/20 V
ID = 300 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Per IEC60747-8-4 pg 83
Inductive Load
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
76
68
Fig 24
Fig 25
Turn-Off Delay Time
Fall Time
168
43
VDS = 600 V, VGS = -5 / 20 V
IDS = 300 A, RG = 2.5 Ω,
Inductive Load
EON
Turn-On Switching Energy
Turn-Off Switching Energy
6.05
5.95
mJ
EOFF
Free-Wheeling Diode Characteristics
Value
Typ
1.7
2.2
3.2
Symbol
Parameter
Unit
Test Conditions
Notes
Min
Max
2.0
2.5
V
V
ISD = 300 A, TJ = 25°C, VGS = 0 V
ISD = 300 A, TJ = 150°C, VGS = 0 V
Fig 8, 9
and 10
VSD
QC
Diode Forward Voltage
Total Capacitive Charge
µC
Note: The reverse recovery is purely capacitive.
Gate Charge Characteristics
Value
Typ
Symbol
Parameter
Unit
Test Conditions
Notes
Min
Max
QGS
QGD
QG
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
166
475
1025
3.0
VDS = 800 V, VGS = -5 /+ 20 V
IDS = 300 Amps
Per JEDEC24 pg 27
Fig 12
nC
RG
Internal Gate Resistance
Ω
f = 200 kHz, VAC = 25 mV
Thermal Characteristics
Value
Typ
Symbol
Parameter
Unit
Test Conditions
Notes
Fig 17
Fig 18
Min
Max
Thermal Resistance Junction to
Case for MOSFET
RθJCM
0.070 0.075
0.073 0.076
TC = 90 °C, Tj =150 °C
Pdis = Pmax
°C/W
Thermal Resistance Junction to
Case for Diode
RθJCD
2
Typical Performance
600
600
500
400
300
200
100
0
VGS = 20 V
VGS = 20 V
VGS = 18 V
VGS = 16 V
500
400
300
200
100
0
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
VGS = 14 V
VGS = 12 V
VGS = 10 V
VGS = 10 V
Conditions:
TJ = -40°C
tp = 200 µs
Conditions:
TJ = 25°C
tp = 200 µs
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Drain-Source VoltageVDS (V)
Drain-Source VoltageVDS (V)
Fig 1. Typical Output Characteristics TJ = -40 °C
Fig 2. Typical Output Characteristics TJ = 25 °C
2.0
600
Conditions:
VGS = 20 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS = 300 A
VGS = 20 V
tp = 200 µs
VGS = 12 V
VGS = 18 V
500
VGS = 16 V
VGS = 14 V
400
VGS = 10 V
300
200
100
0
Conditions:
TJ = 150°C
tp = 200 µs
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
Junction Temperature, TJ (°C)
Drain-Source VoltageVDS (V)
Fig 3. Typical Output Characteristics TJ = 150 °C
Fig 4. Normalized On-Resistance vs. Temperature
12
10
20
Conditions:
IDS = 300 A
tp = 200 µs
18
16
14
12
10
8
VGS = 12 V
VGS = 14 V
Tj = -40 °C
8
VGS = 16 V
6
VGS = 18 V
Tj = 150 °C
VGS = 20 V
4
Tj = 25 °C
6
4
Conditions:
IDS = 300 A
tp = 200 µs
2
0
2
0
-50
-25
0
25
50
75
100
125
150
10
12
14
16
18
20
Junction Temperature, TJ (°C)
Gate-SourceVoltage, VGS (V)
Fig 5. Typical On-Resistance vs. Temperature and
Gate Voltage
Fig 6. Typical On-Resistance vs. Gate Voltage
3
Typical Performance
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
500
Conditions:
0
VDS = 20 V
tp < 200 µs
400
VGS = 0 V
-100
-200
-300
-400
-500
-600
TJ = 150 °C
300
200
100
0
VGS = -2 V
TJ = 25 °C
TJ = -40 °C
VGS = -5 V
Conditions:
TJ = -40 °C
tp = 200 µs
0
2
4
6
8
10
12
14
Drain-Source VoltageVDS (V)
Gate-SourceVoltage, VGS (V)
Fig 7. Typical Transfer Characteristic For Various
Temperatures
Fig 8. Typical Diode Behavior TJ = -40 °C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = -2 V
VGS = -2 V
VGS = 0 V
VGS = -5 V
Conditions:
TJ = 25°C
tp = 200 µs
Conditions:
TJ = 150°C
tp = 200 µs
VGS = 0 V
VGS = -5 V
Drain-Source VoltageVDS (V)
Drain-Source VoltageVDS (V)
Fig 9. Typical Diode Behavior TJ = 25 °C
Fig 10. Typical Diode Behavior TJ = 150 °C
3.0
25
Conditions
VDS = 10 V
IDS = 15mA
Conditions:
TJ = 25 °C
IDS = 300 A
2.5
2.0
1.5
1.0
0.5
0.0
20
VDS = 1000 V
15
10
5
0
-5
-50
-25
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Junction Temperature TJ (°C)
Gate Charge (nC)
Fig 11. Typical Threshold Voltage vs. Temperature
Fig 12. Typical Gate Charge
4
Typical Performance
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
VGS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = 5 V
VGS = 5 V
VGS = 10 V
VGS = 10 V
VGS = 15 V
VGS = 15 V
VGS = 20 V
VGS = 20 V
Conditions:
TJ = -40°C
tp = 200 µs
Conditions:
TJ = 25°C
tp = 200 µs
Drain-Source VoltageVDS (V)
Drain-Source VoltageVDS (V)
Fig 13. Typical 3rd Quadrant Behavior TJ = -40 °C
Fig 14. Typical 3rd Quadrant Behavior TJ = 25 °C
1.6
1.4
1.2
1
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
VGS = 0 V
-100
-200
-300
-400
-500
-600
VGS = 5 V
VGS = 10 V
VGS = 20 V
0.8
0.6
0.4
0.2
0
VGS = 15 V
Conditions:
TJ = 150°C
tp = 200 µs
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Drain-Source VoltageVDS (V)
Fig 15. Typical 3rd Quadrant Behavior TJ = 150 °C
Fig 16. Typical Output Capacitor Stored Energy
100
100
Conditions:
Conditions:
TJ = 25 °C
TJ = 25 °C
VAC = 25 mV
f = 200 kHz
VAC = 25 mV
f = 200 kHz
Ciss
Ciss
10
10
Coss
Coss
1
1
Crss
Crss
0.1
0.1
0.01
0.01
0
50
100
150
200
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Fig 17. Typical Capacitances vs. Drain-Source
Voltage. (0-200V)
Fig 18. Typical Capacitances vs. Drain-Source
Voltage. (0-1000V)
5
Typical Performance
1800
1600
1400
1200
1000
800
600
450
400
350
300
250
200
150
100
50
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
400
200
0
0
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Fig 19. Max. Continuous Power Derating Curve vs.
Case Temperature.
Fig 20. Max. Continuous Current Derating Curve
vs. Case Temperature
100E-3
0.5
100E-3
0.5
0.3
0.3
0.1
0.1
10E-3
10E-3
0.05
0.05
0.02
0.02
1E-3
1E-3
SinglePulse
0.01
SinglePulse
0.01
100E-6
10E-6
100E-6
10E-6
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Fig 21. Typical Transient Thermal Impedance -
MOSFET
Fig 22. Typical Transient Thermal Impedance -
DIODE
1200
Conditions:
TJ = 25 °C
1000.00
100.00
10.00
1.00
1 µs
VDD = 600 V
IDS = 300 A
VGS = -5/+20 V
1000
100 µs
Limited by RDS On
1 ms
800
100 ms
td (off)
600
td (on)
400
tr
tf
0.10
200
0
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
0
5
10
15
20
25
30
35
40
0.100
1.000
10.000
100.000
1000.000
External Gate Resistor, RG(ext) (Ohms)
Drain-Source Voltage, VDS (V)
Fig 24. Typical Inductive Switching Time vs Gate
Resistance (VDD = 600V, ID = 300A)
Fig 23. MOSFET Safe Operating Area
6
Typical Performance
20
30
25
20
15
10
5
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
18
16
14
12
10
8
ETotal
ETotal
6
EOn
EOn
4
EOff
EOff
2
0
0
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
450
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Fig 25. Typical Clamped Inductive Switching
Energy vs Drain Current (VDD = 600V)
Fig 26. Typical Clamped Inductive Switching
Energy vs Drain Current (VDD = 800V)
14
120
Conditions:
TJ = 25 °C
VDD = 600 V
ETotal
12
100
IDS =300 A
VGS = -5/+20 V
L = 77 μH
ETotal
10
8
80
60
40
20
0
EOff
6
EOn
EOff
EOn
Conditions:
4
2
0
VDD = 600 V
RG(ext) = 2.5 Ω
IDS =300 A
VGS = -5/+20 V
L = 77 μH
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
Junction Temperature, TJ (°C)
External Gate Resistor RG(ext) (Ohms)
Fig 27. Typical Switching Loss vs. Temperature
Fig 28. Typical Switching Loss vs. Gate Resistance
7
Schematic
Mechanical Characteristics (in mm)
8
相关型号：
©2020 ICPDF网 联系我们和版权申明