CGHV35120F_技术文档

CGHV35120F

120 W, 3100 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV35120F ideal for 3.1 - 3.5 GHz S-Band radar ampliﬁer

applications. The transistor is supplied in a ceramic/metal ﬂange package.

Typical Performance 3.1 - 3.5 GHz (T_C= 85˚C)

Parameter

3.1 GHz

3.2 GHz

3.3 GHz

3.4 GHz

3.5 GHz

Units

Output Power

142

135

132

136

134

W

Gain

13

12.8

12.9

12.8

dB

Drain Efﬁciency

68

66

63

62

%

Note:Measured in the CGHV35120F-AMP1 application circuit, under 100 µs pulse width, 10% duty cycle, P_IN= 38.5 dBm

Features:

• Rated Power = 120 W @ T_CASE= 85°C

• Operating Frequency = 3.1 - 3.5 GHz

• Transient 100 µsec - 300 µsec @ 20% Duty Cycle

• 13 dB Power Gain @ T_CASE= 85°C

• 62 % Typical Drain Efﬁciency @ T_CASE= 85°C

• Input Matched

• <0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

1

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

Rating

Units

Conditions

Pulse Width

PW

300

µs

Duty Cycle

DC

V_DSS

V_GS

20

125

%

Volts

˚C

Drain-Source Voltage

25˚C

Gate-to-Source Voltage

Storage Temperature

-10, +2

-65, +150

225

T_STG

Operating Junction Temperature

Maximum Forward Gate Current

Maximum Drain Current¹

Soldering Temperature²

Screw Torque

T

˚C

J

I_GMAX

I_DMAX

T_S

22.5

mA

A

25˚C

9

245

˚C

40

in-oz

˚C/W

˚C

τ

Pulsed Thermal Resistance, Junction to Case³

Case Operating Temperature

R_θJC

1.2

300 µsec, 20%, 85˚C

T_C

-40, +130

30 seconds

Note:

¹Current limit for long term, reliable operation

²Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

³Measured for the CGHV35120F at P_DISS= 80 W

Electrical Characteristics

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹(T_C= 25˚C)

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.7

19.4

–

-2.3

–

V_DC

A

V_DS= 10 V, I_D= 21.6 mA

V_DS= 48 V, I_D= 220 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 21.6 mA

Gate Quiescent Voltage

Saturated Drain Current²

16.2

150

–

Drain-Source Breakdown Voltage

V_BR

–

V_DC

RF Characteristics³(T_C= 85˚C, F₀= 3.1 - 3.5 GHz unless otherwise noted)

Output Power at 3.1 GHz

Output Power at 3.5 GHz

Gain at 3.1 GHz

P_OUT

G_P

η

–

142

134

13

–

W

V_DD= 48 V, I_DQ= 220 mA, P_IN= 38.5 dBm

dB

%

Gain at 3.5 GHz

12.8

68

Drain Efﬁciency at 3.1 GHz

Drain Efﬁciency at 3.5 GHz

Amplitude Droop

η

62

%

D

-0.3

dB

No damage at all phase angles,

V_DD= 48 V, I_DQ= 220 mA, P_IN= 38.5 dBm Pulsed

Y

Output Mismatch Stress

VSWR

–

5 : 1

Dynamic Characteristics

Input Capacitance

C_GS

–

65

–

pF

V_DS= 48 V, V_gs= -8 V, f = 1 MHz

Output Capacitance

C_DS

C_GD

–

9.5

0.7

–

pF

V_DS= 48 V, V_gs= -8 V, f = 1 MHz

Feedback Capacitance

Notes:

¹Measured on wafer prior to packaging.

²Scaled from PCM data.

³Measured in Cree’s production test ﬁxture. Pulse Width = 100 μS, Duty Cycle = 10%.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

2

CGHV35120F Rev 0.0

Typical Performance

Figure 1. - CGHV35120F Typical Sparameters Measured in CGHV35120F-AMP1

V_DD= 48 V, I_DQ= 220 mA, T_CASE= 25°C

25

15

5

-5

S21

S11

S22

-15

-25

2.9

3.1

3.3

3.5

3.7

Frequency (MHz)

Figure 2. - CGHV35120F Typical RF Results Measured in CGHV35120F-AMP1

V_DD= 48 V, I_DQ= 220 mA, Tplate = 85°C, Pulse Width = 100 µs, Duty Cycle = 10 %

150

140

130

120

110

100

90

20

19

18

17

16

15

14

13

12

11

10

9

80

70

60

50

Power Out

Drain Eff

Gain

40

30

8

20

7

10

6

0

5

3100

3150

3200

3250

3300

3350

3400

3450

3500

Frequency (MHz)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

3

CGHV35120F Rev 0.0

Typical Performance

Figure 3. - CGHV35120F Output Power vs Input Power Measured in CGHV35120F-AMP1

V_DD= 48 V, I_DQ= 220 mA, T_PLATE= 85°C, Pulse Width = 100 µs, Duty Cycle = 10%

55

50

45

40

35

30

3.1 GHz

3.3 GHz

3.5GHz

25

20

8

10

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

42

44

Input Power (dBm)

Figure 4. - CGHV35120F Gain and Drain Efﬁciency vs Output Power Measured in CGHV35120F-AMP1

V_DD= 48 V, I_DQ= 220 mA, Tplate = 85°C, Pulse Width = 100 µs, Duty Cycle = 10 %

17

16

15

14

13

12

11

10

9

90

80

70

60

50

40

30

20

10

0

Gain - 3.1GHz

Gain - 3.3GHz

Gain - 3.5GHz

Drain Eff - 3.1 GHz

Drain Eff - 3.3 GHz

Drain Eff - 3.5 GHz

8

20

22

24

26

28

30

32

34

36

38

40

42

44

46

48

50

52

54

Output Power (dBm)

Electrostatic Discharge (ESD) Classiﬁcations

Parameter

Symbol

HBM

Class

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Human Body Model

Charge Device Model

1A (> 250 V)

CDM

II (200 < 500 V)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

4

CGHV35120F Rev 0.0

CGHV35120F Power Dissipation De-rating Curve

Figure 5. - CGHV35120F Transient Power Dissipation De-Rating Curve

90

80

70

60

50

40

30

20

10

0

Note 1

0

25

50

75

100

125

150

175

200

225

250

Maximum Case Temperature (C)

Note 1. Area exceeds Maximum Case Temperature (See Page 2).

CGHV35120F-AMP1 Application Circuit Bill of Materials

Designator

Description

Qty

R1

R2

RES, 511 OHMS, +/- 1%, 1/16W,0603

RES, 5.1, OHM, +/- 1%, 1/16W,0603

CAP, 10pF, +/- 1%, 250V, 0805, ATC

CAP, 6.8pF, +/- 0.25 pF,250V, 0603, ATC

CAP, 10.0pF, +/-5%,250V, 0603, ATC

CAP, 470PF, 5%, 100V, 0603, X7R

CAP,33000PF, 0805,100V, X7R

1

2

1

2

1

C8

C2

C1, C3

C4, C9

C5, C10

C6

CAP 10UF 16V TANTALUM

C7

CAP, 6.8pF, +/- 1%, 250V, 0805, ATC

CAP, 1.0UF, 100V, 10%, X7R, 1210

CAP, 33 UF, 20%, G CASE

C11

C12

C13

C14

CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC

CAP, 0.4pF, +/-0.1pF, 0603, ATC

CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,

BLUNT POST, 20MIL

J1, J2

2

J3

J4

HEADER RT>PLZ .1CEN LK 9POS

CONNECTOR; SMB, Straight, JACK, SMD

CABLE ,18 AWG, 4.2

1

W1

PCB, RO4350, 10 MIL THK, CGHV35120F

CGHV35120F

Q1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

5

CGHV35120F Rev 0.0

CGHV35120F-AMP1 Application Circuit Outline

CGHV35120F-AMP1 Application Circuit Schematic

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

6

CGHV35120F Rev 0.0

Product Dimensions CGHV35120F (Package Type — 440162)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

7

CGHV35120F Rev 0.0

Part Number System

CGHV35120F

Flanged or Pill

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

Parameter

Value

Units

Upper Frequency¹

Power Output

Package

3.5

120

GHz

W

Flange

-

Table 1.

Note¹: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code

Code Value

A

B

C

D

E

0

1

2

3

4

5

6

7

8

9

F

G

H

J

K

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Table 2.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

8

CGHV35120F Rev 0.0

Product Ordering Information

Order Number

Description

Unit of Measure

Image

CGHV35120F

GaN HEMT

Each

CGHV35120F-AMP1

Test board with GaN HEMT installed

Each

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

9

CGHV35120F Rev 0.0

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

10

CGHV35120F Rev 0.0


型号：	CGHV35120F
厂家：	CREE, INC
描述：	RF Power Field-Effect Transistor,
文件：	总10页 (文件大小：540K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CGHV35120F [CREE]

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