CGHV35150-TB [CREE]
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems;
| 型号： | CGHV35150-TB |
| 厂家： | 
CREE, INC |
| 描述： | 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems |
| 文件： | 总10页 (文件大小：853K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV35150
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically with high efficiency, high gain and wide bandwidth capabilitie
which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifie
applications. The transistor is supplied in a ceramic/metal flange and pill package.
Typical Performance 3.1 - 3.5 GHz (TC = 85˚C)
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
3.5 GHz
Units
Output Power
180
180
180
170
150
dB
Gain
13.5
13.5
49
13.5
13.3
49
12.7
dBc
Drain Efficiency
50
50
48
%
Note:Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 dBm
Features:
• Rated Power = 150 W @ TCASE = 85°C
• Operating Frequency = 2.9 - 3.5 GHz
• Transient 100 µsec - 300 µsec @ 20% Duty Cycle
• 13.5 dB Power Gain @ TCASE = 85°C
• 50 % Typical Drain Efficiency @ TCASE = 85°C
• Input Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Pulse Width
PW
300
µs
Duty Cycle
DC
VDSS
VGS
20
125
%
Volts
Volts
˚C
Drain-Source Voltage
25˚C
25˚C
Gate-to-Source Voltage
-10, +2
-65, +150
225
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
T
˚C
J
IGMAX
IDMAX
TS
30
mA
A
25˚C
25˚C
12
245
˚C
Screw Torque
40
in-oz
˚C/W
˚C/W
˚C
τ
Pulsed Thermal Resistance, Junction to Case3
Pulsed Thermal Resistance, Junction to Case4
Case Operating Temperature
RθJC
RθJC
TC
0.81
300 µsec, 20%, 85˚C
300 µsec, 20%, 85˚C
30 seconds
0.86
-40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV35150P at PDISS = 150 W
4 Measured for the CGHV35150F at PDISS = 150 W
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
25.9
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 28.8 mA
VDS = 50 V, ID = 500 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
Gate Quiescent Voltage
Saturated Drain Current2
21.6
150
–
Drain-Source Breakdown Voltage
VBR
–
VDC
RF Characteristics3 (TC = 85˚C, F0 = 3.1 - 3.5 GHz unless otherwise noted)
Output Power at 3.1 GHz
Output Power at 3.5 GHz
Gain at 3.1 GHz
POUT
POUT
GP
130
100
12.0
11.0
40
170
135
13.3
12.3
47
–
–
–
–
–
–
–
W
W
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
dB
dB
%
Gain at 3.5 GHz
GP
Drain Efficiency at 3.1 GHz
Drain Efficiency at 3.5 GHz
Amplitude Droop
DE
DE
40
44
%
D
–
-0.3
dB
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
No damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Pulsed
Y
Output Mismatch Stress
VSWR
–
–
5 : 1
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV35150-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV35150 Rev 1.0
Typical Performance
Figure 1. - CGHV35150 Typical Sparameters
VDD = 50 V, IDQ = 500 mA, TCASE = 25°C
20
15
10
5
0
-5
S21
S11
-10
-15
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
Frequency (GHz)
Figure 2. - CGHV35150 Typical RF Results
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Tplate = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 %
200
180
160
140
120
100
80
Output Power
Gain
Drain Efficiency
60
40
20
0
2.9
3.0
3.1
3.2
3.3
3.4
3.5
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV35150 Rev 1.0
Typical Performance
Figure 3. - CGHV35150 Output Power vs Input Power
VDD = 50 V, IDQ = 500 mA, TPLATE = 85°C, Pulse Width = 300 µs, Duty Cycle = 20%
55
50
3.1 GHz
45
3.3 GHz
3.5 GHz
40
35
30
25
5
10
15
20
25
30
35
40
45
Input Power (dBm)
Figure 4. - CGHV35150 Gain and Drain Efficiency vs Input Power
VDD = 50 V, IDQ = 500 mA, Tplate = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 %
60
50
40
30
20
10
0
18
16
14
12
10
8
Drain Eff - 3.1 GHz
Drain Eff - 3.3 GHz
Drain Eff - 3.5 GHz
Gain - 3.1 GHz
Gain - 3.3 GHz
Gain - 3.5 GHz
6
5
10
15
20
25
30
35
40
45
Input Power (dBm)
Electrostatic Discharge (ESD) Classifications
Gain
Parameter
Symbol
HBM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
Human Body Model
Charge Device Model
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV35150 Rev 1.0
CGHV35150 Power Dissipation De-rating Curve
Figure 5. - CGHV35150 Transient Power Dissipation De-Rating Curve
140
120
100
80
60
Note 1
Flange
Pill
40
20
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
CGHV35150-AMP Application Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 511 OHM, +/- 1%, 1/16W, 0603
RES, 5.1 OHM, +/- 1%, 1/16W, 0603
CAP, 10pF, +/- 1%, 250V, 0805
CAP, 6.8pF, +/- 0.25 pF,250V, 0603
CAP, 10.0pF, +/-5%,250V, 0603
CAP, 470PF, 5%, 100V, 0603, X
CAP, 33000PF, 0805,100V, X7R
CAP 10uF 16V TANTALUM
1
1
3
1
1
2
1
1
1
1
1
2
1
1
1
1
1
C1,C7,C8
C2
C3
C4,C9
C5,C10
C6
C11
C12
C13
J1,J2
J3
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP, 33 UF, 20%, G CASE
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
CONN, SMA, PANEL MOUNT JACK, FL
HEADER RT>PLZ .1CEN LK 9POS
CONNECTOR ; SMB, Straight, JACK,SMD
CABLE ,18 AWG, 4.2
J4
W1
PCB, RO4350, 20 MIL THK, CGHV35150
CGHV35150
Q1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV35150 Rev 1.0
CGHV35150-AMP Application Circuit Outline
CGHV35150-AMP Application Circuit Schematic
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV35150 Rev 1.0
Product Dimensions CGHV35150F (Package Type — 440193)
Product Dimensions CGHV35150P (Package Type — 440206)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV35150 Rev 1.0
Part Number System
CGHV35150F/P
Flanged or Pill
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
3.5
150
GHz
W
-
Flange
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV35150 Rev 1.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV35150F
GaN HEMT
Each
CGHV35150P
CGHV35150-TB
CGHV35150F-AMP
GaN HEMT
Each
Each
Each
Test board without GaN HEMT
Test board with GaN HEMT installed
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV35150 Rev 1.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV35150 Rev 1.0
相关型号：
CGHV37400F
400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
CREE
©2020 ICPDF网 联系我们和版权申明