CGHV35400F [CREE]
400 W, 2900 - 3500 MHz, 50-Ohm Input;
| 型号： | CGHV35400F |
| 厂家： | 
CREE, INC |
| 描述： | 400 W, 2900 - 3500 MHz, 50-Ohm Input |
| 文件： | 总11页 (文件大小：829K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV35400F
400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically with high efficiency, high gain and wide bandwidth capabilitie
which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier application
The transistor is supplied in a ceramic/metal flange package, type 440210.
Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier
Parameter
2.9 GHz
3.2 GHz
3.5 GHz
Units
Output Power
375
400
360
W
Gain
9.8
10
59
9.6
dB
Drain Efficiency
Note:
66
57
%
Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.
Features
•
•
•
•
•
•
2.9 - 3.5 GHz Operation
400 W Typical Output Power
10.5 dB Power Gain
60% Typical Drain Efficiency
50 Ohm Internally Matched
<0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
PW
Rating
500
Units
µs
Conditions
Pulse Width
Duty Cycle
DC
10
%
Drain-Source Voltage
VDSS
VGS
125
Volts
Volts
˚C
25˚C
25˚C
Gate-to-Source Voltage
Storage Temperature
-10, +2
-65, +150
225
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
80
mA
A
25˚C
25˚C
24
245
˚C
40
in-oz
˚C/W
˚C/W
˚C
τ
Pulsed Thermal Resistance, Junction to Case
Pulsed Thermal Resistance, Junction to Case
Case Operating Temperature
RθJC
RθJC
TC
0.22
0.30
-40, +85
100 μsec, 10%, 85˚C , PDISS = 418 W
500 μsec, 10%, 85˚C, PDISS = 418 W
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
75.5
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 83.6 mA
VDS = 45 V, ID = 0.5 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
62.7
150
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 83.6 mA
VBR
–
VDC
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV35400F Rev 2.0
Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics3 (TC = 85˚C, F0 = 2.9 - 3.5 GHz unless otherwise noted)
Output Power at 2.9 GHz
Output Power at 3.2 GHz
Output Power at 3.5 GHz
Gain at 2.9 GHz
POUT1
POUT2
POUT3
GP1
GP2
GP3
DE1
340
340
300
9.3
9.3
8.7
58
375
400
360
9.8
10.0
9.6
66
–
–
W
W
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
–
W
–
dB
dB
dB
%
Gain at 3.2 GHz
–
Gain at 3.5 GHz
–
Drain Efficiency at 2.9 GHz
Drain Efficiency at 3.2 GHz
Drain Efficiency at 3.5 GHz
Small Signal Gain
–
DE2
53
59
–
%
DE3
48
57
–
%
S21
S11
S22
D
10.5
–
12
–
dB
dB
dB
dB
VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm
VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm
VDD = 45 V, IDQ = 500 mA, PIN = -10 dBm
VDD = 45 V, IDQ = 500 mA, PIN = 46 dBm
Input Return Loss
-8
-3.0
-4.0
–
Output Return Loss
Amplitude Droop
–
-8
–
-0.3
No damage at all phase angles,
DD = 45 V, IDQ = 500 mA, PIN = 46 dBm Pulsed
Y
Output Stress Match
VSWR
–
5:1
–
V
Notes:
3 Measured in CGHV35400F-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
Human Body Model
Charge Device Model
1A (> 250 V)
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
CDM
II (200 < 500 V)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV35400F Rev 2.0
Typical Performance
Figure 1. - CGHV35400F Typical Sparameters
VDD = 45 V, IDQ = 0.5 A
15
10
5
0
-5
S(2,1)
S(1,1)
S(2,2)
-10
-15
2500
2700
2900
3100
3300
3500
3700
3900
Frequency (GHz)
Figure 2. - CGHV35400F POUT and Drain Eff vs Frequency at TCASE = 85˚C
VDD = 45 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 500µs, Duty Cycle = 10 %
500
450
400
350
300
100
90
80
70
60
50
40
250
200
Output Power
Drain Efficiency
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV35400F Rev 2.0
Typical Performance
Figure 3. - CGHV35400F Output Power vs Input Power
VDD = 45 V, IDQ = 500 mA, Pulse Width = 500 µs, Duty Cycle = 10 %, Tcase = 85 °C
60
55
50
45
40
35
30
25
20
2.9 GHz
3.2 GHz
3.5 GHz
5
10
15
20
25
30
35
40
45
50
Input Power (dBm)
Figure 4. - CGHV35400F Drain Efficiency & Gain vs Input Power
VDD = 45 V, IDQ = 500 mA, Pulse Width = 500 µs, Duty Cycle = 10 %, Tcase = 85 °C
70
16
60
50
40
30
20
10
0
14
12
Drain Efficiency - 2.9 GHz
Drain Efficiency - 3.2 GHz
Drain Efficiency - 3.5 GHz
Gain - 2.9 GHz
10
8
Gain - 3.2 GHz
Gain - 3.5 GHz
6
4
2
5
10
15
20
25
30
35
40
45
50
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV35400F Rev 2.0
CGHV35400F-AMP Application Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 511, OHM, +/- 1%, 1/16W, 0603
RES, 5.1, OHM, +/- 1%, 1/16W, 0603
CAP, 6.8pF, +/-0.25%, 250V, 0603
CAP, 10.0pF, +/-1%, 250V, 0805
CAP, 10.0pF, +/-5%, 250V, 0603
CAP, 470pF, 5%, 100V, 0603, X
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10uF 16V TANTALUM
1
1
1
3
1
2
1
1
1
1
1
2
1
1
1
1
1
C1
C2, C7, C8
C3
C4, C9
C5
C6
C10
C11
C12
J1,J2
J3
CAP, 1.0uF, 100V, 10%, X7R, 1210
CAP, 33uF, 20%, G CASE
CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC
CONN, SMA, PANEL MOUNT JACK, FL
HEADER, RT>PLZ, 0.1CEN LK 9POS
CONNECTOR; SMB, Straight, JACK, SMD
CABLE, 18 AWG, 4.2
J4
W1
-
PCB, RO4350, 2.5 X 4.0 X 0.030
CGHV35400F
Q1
CGHV35400F Power Dissipation De-rating Curve
Figure 5. - CGHV35400F Transient Power Dissipation De-Rating Curve
500
400
300
200
100
0
Note 1
Maximum Case Temperature (°C)
0
25
50
75
100
125
150
175
200
225
250
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV35400F Rev 2.0
CGHV35400F-AMP Application Circuit Outline
CGHV35400F-AMP Application Circuit Schematic
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV35400F Rev 2.0
Product Dimensions CGHV35400F (Package Type — 440210)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV35400F Rev 2.0
Part Number System
CGHV35400F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
3.5
400
GHz
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV35400F Rev 2.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV35400F
GaN HEMT
Each
CGHV35400F-TB
Test board without GaN HEMT
Each
CGHV35400F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV35400F Rev 2.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV35400F Rev 2.0
相关型号：
CGHV37400F
400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
CREE
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