CMPA2560025F-TB [CREE]
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier;
| 型号： | CMPA2560025F-TB |
| 厂家： | 
CREE, INC |
| 描述： | 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier |
| 文件： | 总11页 (文件大小：955K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobili
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenide, includin
higher breakdown voltage, higher saturated electron drift velocity and highe
thermal conductivity. GaN HEMTs also offer greater power density and wide
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier enabling very wide bandwidths to
be achieved in a small footprint screw-down package featuring a Copper-
Tungsten heat-sink.
Typical Performance Over 2.5-6.0 GHz (TC = 25˚C)
Parameter
2.5 GHz
27.5
4.0 GHz
24.3
6.0 GHz
23.1
Units
dB
W
Gain
1
Saturated Output Power, PSAT
Power Gain @ POUT 43 dBm
PAE @ POUT 43 dBm
35.8
37.5
25.6
23.1
20.9
16.3
dB
%
31.5
32.8
30.7
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Features
Applications
•
•
•
•
•
24 dB Small Signal Gain
•
•
•
•
Ultra Broadband Amplifiers
25 W Typical PSAT
Fiber Drivers
Operation up to 28 V
Test Instrumentation
EMC Amplifier Drivers
High Breakdown Voltage
High Temperature Operation
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
Rating
84
Units
VDC
VDC
˚C
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Forward Gate Current
Screw Torque
VGS
-10, +2
-65, +150
225
TSTG
T
˚C
J
IG
T
13
mA
40
in-oz
˚C/W
Thermal Resistance, Junction to Case
RθJC
2.5
Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
V(GS)TH
V(GS)Q
VBD
-3.8
–
-3.0
-2.7
100
9.7
-2.3
–
V
VDC
V
VDS = 10 V, ID = 20 mA
VDD = 28 V, ID = 1200 mA
VGS = -8 V, ID = 20 mA
VDS = 6.0 V, VGS = 2.0 V
Gate Quiescent Voltage
Drain-Source Breakdown Voltage
84
8.0
–
Saturated Drain Current1
RF Characteristics2
Small Signal Gain
IDC
–
A
S21
S11
S22
POUT
POUT
POUT
PAE
PAE
PAE
GP
19.5
–
24
-8
–
-5
-3
–
–
–
–
–
–
–
–
–
dB
dB
dB
W
VDD = 28 V, ID = 1200 mA
VDD = 28 V, ID = 1200 mA
Input Return Loss
Output Return Loss
Power Output1
–
-8
VDD = 28 V, ID = 1200 mA
22.0
12.5
15.5
34
30
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz
VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz
Power Output2
17
W
Power Output3
20
W
Power Added Efficiency1
Power Added Efficiency2
Power Added Efficiency3
Power Gain1
40
%
20
26
%
24
30
%
17.5
15.0
16.0
18.8
16.3
17.0
dB
dB
dB
Power Gain2
GP
Power Gain3
GP
No damage at all phase angles,
VDD = 28 V, IDQ = 1200 mA, PIN = 26 dBm
Y
Output Mismatch Stress
VSWR
–
–
5 : 1
Notes:
1 Scaled from PCM data.
2 All data CW tested in CMPA2560025F-AMP.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
2
CMPA2560025F Rev 3.0
Typical Performance
Small Signal Gain vs Frequency
Input & Output Return Losses
vs Frequency
30
28
26
24
22
20
18
16
14
12
10
0
S11 Typical
-2
S22 Typical
-4
-6
-8
-10
-12
-14
-16
-18
-20
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Frequency (GHz)
Power Gain vs Frequency
Gain vs Output Power as
a Function of Frequency
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
Output Power = 44 dBm
Output Power = 43 dBm
2.5 GHz
4.0 GHz
6.0 GHz
18
22
26
30
34
38
42
46
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Output Power (dBm)
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
3
CMPA2560025F Rev 3.0
Typical Performance
Saturated Output Power Performance (PSAT) vs Frequency
50
49
48
47
46
45
44
43
42
41
40
Frequency (GHz)
PSAT (dBm)
PSAT (W)
2.5
45.54
44.43
45.52
45.74
44.82
45.08
45.07
44.08
35.8
27.7
35.7
37.5
30.4
32.2
32.1
25.6
Typical Psat (dBm)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Note: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Power Added Efficiency vs Output Power
PAE at 43 dBm and 44 dBm Output
as a Function of Frequency
Power vs Frequency
45%
45%
40%
35%
30%
25%
20%
15%
10%
5%
40%
35%
30%
25%
20%
2.5 GHz
4.0 GHz
6.0 GHz
15%
10%
5%
PAE 44 dBm
PAE 43 dBm
0%
0%
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Output Power, POUT (dBm)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
4
CMPA2560025F Rev 3.0
Typical Performance
2ND Harmonic vs Output Power
as a Function of Frequency
IM3 vs Total Average Power
as a Function of Frequency
0
-10
-20
-30
-40
-50
-60
-70
0
-5
2.5 GHz
4.0 GHz
6.0 GHz
2.5 GHz
4.0 GHz
6.0 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
22
24
26
28
30
32
34
36
38
40
42
44
22
24
26
28
30
32
34
36
38
40
42
44
46
Total Average Output Power (dBm)
Output Power, POUT (dBm)
Gain at POUT of 40 dBm at
25°C & 75°C vs Frequency
30
25
20
15
10
5
Ambient (25°C)
Hot (75°C)
0
2.5
2.8
3.1
3.4
3.7
4.0
Frequency (GHz)
Note: The temperature coefficient is -0.05 dB/°C
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
5
CMPA2560025F Rev 3.0
General Device Information
The CMPA2560025F is a two stage GaN HEMT MMIC Power Amplifier, which operates between 2.5- 6.0 GHz. The amplifier
typically provides 25 dB of small signal gain and 25 W saturated output power with an associated power added efficiency of better than
30 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from dedicated ports.
The RF-input and output both require an external DC-block. DC voltage should not be applied to the RF output pin due to the internal
matching elements. The two gate pins, G1 and G2, are internally connected so it is sufficient to apply bias to only one of them. The drain
pins, D1 and D2, should both be connected to the drain supply. The component has internal DC-decoupling on the gate and drain pins,
1840pF and 920pF respectively. The test fixture also provides extra decoupling capacitors on all supply lines. Details of these compo-
nents can be found on the bill of materials.
The CMPA2560025F is provided in a lead-less package format. The input and output connections are gold plated to enable
gold bond wire attach at the next level assembly.
The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. All
losses associated with the test fixture are included in the measurements.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
6
CMPA2560025F Rev 3.0
CMPA2560025F CW Power Dissipation De-rating Curve
Note 1
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
7
CMPA2560025F Rev 3.0
CMPA2560025F-AMP Demonstration Amplifier Circuit
CMPA2560025F-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
8
CMPA2560025F Rev 3.0
CMPA2560025F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
J1,J2
J3
CONNECTOR, SMA, AMP1052901-1
HEADER, RT. PLZ. 1, CEN LK, 5 POS
2
1
CAP, 2400 pF, BROADBAND BLOCK, C08BL242X-5UN-
X0T 2
C1,C2,C3
3
C4,C5,C6
CAP, 0.1 UF, +/- 10 % , 0805
RES, 0 OHM, 1206
3
1
1
1
R1
-
PCB, TACONIC, RF-35-0100-CH/CH
CMPA2560025F
Q1
Notes
1 The CMPA2560025F is connected to the PCB with 2.0 mil Au bond wires.
2 An external DC Block is required on the input and output.
Product Dimensions CMPA2560025F (Package Type — 780019)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
9
CMPA2560025F Rev 3.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CMPA25650025F
GaN HEMT
Each
CMPA2560025F-TB
Test board without GaN HEMT
Each
CMPA2560025F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
10
CMPA2560025F Rev 3.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
11
CMPA2560025F Rev 3.0
相关型号：
CMPA2735075F
Narrow Band High Power Amplifier, 2700MHz Min, 3500MHz Max, 0.500 X 0.500 INCH, 780019, 6 PIN
CREE
©2020 ICPDF网 联系我们和版权申明