CXXXTR3041-SXX00 [CREE]
Rectangular LED Rf Performance Low Forward Voltage - 3.2 V Typical at 20 mA; 矩形LED射频性能低正向电压 - 3.2 V（典型）在20mA
| 型号： | CXXXTR3041-SXX00 |
| 厂家： | 
CREE, INC |
| 描述： | Rectangular LED Rf Performance Low Forward Voltage - 3.2 V Typical at 20 mA |
| 文件： | 总5页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TR300™ LEDs
CxxxTR3041-Sxx00
Data Sheet
Cree’sꢀTR™ꢀLEDsꢀareꢀtheꢀnewestꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀInGaNꢀmaterialsꢀ
withꢀCree’sꢀproprietaryꢀdeviceꢀtechnologyꢀandꢀsiliconꢀcarbideꢀsubstratesꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀtheꢀLCDꢀsideviewꢀ
market.ꢀTheꢀTRꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀsideviewꢀmarketꢀwhileꢀdeliveringꢀaꢀlowꢀforwardꢀvoltageꢀresultingꢀinꢀ
aꢀveryꢀbrightꢀandꢀhighlyꢀefficientꢀsolutionꢀforꢀtheꢀ0.6-mmꢀandꢀ0.8-mmꢀsideviewꢀmarket.ꢀTheꢀdesignꢀisꢀoptimallyꢀsuitedꢀ
forꢀindustryꢀstandardꢀsideviewꢀpackagesꢀasꢀitꢀisꢀdieꢀattachableꢀwithꢀclearꢀepoxyꢀandꢀhasꢀtwoꢀtopꢀcontacts,ꢀconsistentꢀ
withꢀindustryꢀstandardꢀpackaging.
FEATURES
APPLICATIONS
•ꢀ RectangularꢀLEDꢀRfꢀPerformance
−ꢀ 450ꢀ&ꢀ460ꢀnm
•ꢀ SmallꢀLCDꢀBacklightingꢀ–ꢀ0.8ꢀmmꢀ&ꢀ0.6ꢀmmꢀ
sideviewꢀpackages
�ꢀ TR-30™ꢀ–ꢀ30ꢀmWꢀmin.
−ꢀ MobileꢀAppliances
•ꢀ EpoxyꢀDieꢀAttach
−ꢀ DigitalꢀCameras
•ꢀ LowꢀForwardꢀVoltageꢀ-ꢀ3.2ꢀVꢀTypicalꢀatꢀ20ꢀmA
•ꢀ 1000-VꢀESDꢀThresholdꢀRating
•ꢀ InGaNꢀJunctionꢀonꢀThermallyꢀConductiveꢀSiCꢀ
Substrate
−ꢀ CarꢀNavigationꢀSystems
•ꢀ MediumꢀLCDꢀBacklightingꢀ–ꢀ0.8ꢀmmꢀ&ꢀ0.6ꢀmmꢀ
sideviewꢀpackages
−ꢀ PortableꢀPCs
−ꢀ Monitors
•ꢀ LEDꢀVideoꢀDisplays
•ꢀ GeneralꢀIllumination
CxxxTR3041-Sxx00 Chip Diagram
ꢀ
Bottom View
Die Cross Section
Top View
Backside
Anodeꢀ(+)
80ꢀμmꢀdiameter
BottomꢀSurface
155ꢀxꢀ265ꢀμm
TR300ꢀLED
300ꢀxꢀ410ꢀμm
Cathodeꢀ(-)
98ꢀxꢀ98ꢀμm
tꢀ=ꢀ140ꢀμm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1&3
DCꢀForwardꢀCurrent
CxxxTR3041-Sxx00
50ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
100ꢀmA
125°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
1000ꢀV
StorageꢀTemperatureꢀRange
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2
Classꢀ2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.2
Max.
Max.
Typ.
20
C450TR3041-Sxx00
C460TR3041-Sxx00
2.7
2.7
3.7
3.7
2
2
3.2
21
Mechanical Specifications
Description
CxxxTR3041-Sxx00
Dimension
Tolerance
±35
P-NꢀJunctionꢀAreaꢀ(μm)
ChipꢀAreaꢀ(μm)
260ꢀxꢀ370
300ꢀxꢀ410
140
±35
ChipꢀThicknessꢀ(μm)
±15
AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)
AuꢀBondꢀPadꢀThicknessesꢀ(μm)
AuꢀBondꢀPadꢀAreaꢀCathodeꢀ(μm)
BottomꢀAreaꢀꢀ(μm)
80
-5,ꢀ+15
±0.5
1.0
98ꢀxꢀ98
155ꢀxꢀ265
-5,ꢀ+15
±35
Notes:
1.ꢀ Maximumꢀratingsꢀareꢀpackageꢀdependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀT-1ꢀ3/4ꢀpackageꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀ
encapsulationꢀandꢀclearꢀepoxyꢀdieꢀattach)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀ
andꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀbutꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀ
limitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀ
limitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ
andꢀoperatedꢀatꢀ20ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ
areꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀ
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀclearꢀepoxyꢀdieꢀattach).ꢀ
OpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀusingꢀIlluminanceꢀE.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Copyrightꢀ©ꢀ2008ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTR,ꢀTR30ꢀandꢀTR300ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
2
CPR3DV Rev. -
Standard Bins for CxxxTR3041-Sxx00
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀfromꢀ
onlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxTR3041-Sxxxx)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxTR3041-xxxx)ꢀcontainedꢀ
inꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ20ꢀmA.
TR-30
C450TR3041-S3000
C450TR3041-0209
C450TR3041-0205
C450TR3041-0201
C450TR3041-0210
C450TR3041-0206
C450TR3041-0202
C450TR3041-0211
C450TR3041-0207
C450TR3041-0203
C450TR3041-0212
C450TR3041-0208
C450TR3041-0204
35.0ꢀmW
33.0ꢀmW
30.0ꢀmW
455ꢀnm
445ꢀnm
447.5ꢀnm
450ꢀnm
452.5ꢀnm
Dominant Wavelength
TR-30
C460TR3041-S3000
C460TR3041-0209
C460TR3041-0205
C460TR3041-0201
C460TR3041-0210
C460TR3041-0211
C460TR3041-0207
C460TR3041-0203
C460TR3041-0212
C460TR3041-0208
C460TR3041-0204
35.0ꢀmW
33.0ꢀmW
30.0ꢀmW
C460TR3041-0206
C460TR3041-0202
465ꢀnm
455ꢀnm
457.5ꢀnm
460ꢀnm
Dominant Wavelength
462.5ꢀnm
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
Copyrightꢀ©ꢀ2008ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTR,ꢀTR30ꢀandꢀTR300ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
3
CPR3DV Rev. -
Characteristic Curves
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀTRꢀLEDꢀproduct.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀ
fluxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
50
40
30
20
10
0
1.50
1.00
0.50
0.00
-0.50
-1.00
-1.50
-2.00
0
1
2
3
4
5
0
10
20
30
40
50
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
Relative Intensity vs Peak Wavelength
120
100
80
60
40
20
0
2.50
2.00
1.50
1.00
0.50
0.00
0
10
20
30
40
50
320
420
520
620
If (mA)
Wavelength (nm)
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2008ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTR,ꢀTR30ꢀandꢀTR300ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
4
CPR3DV Rev. -
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀTRꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2008ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTR,ꢀTR30ꢀandꢀTR300ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
5
CPR3DV Rev. -
相关型号：
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