GTRA262802FC-V2-R0 [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 â 2690 MHz;
| 型号： | GTRA262802FC-V2-R0 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 â 2690 MHz |
| 文件： | 总9页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTRA262802FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
250 W, 48 V, 2490 – 2690 MHz
Description
GTRA262802FC
The GTRA262802FC is a 250-watt (P
) GaN on SiC high electron
3dB
Package H-37248C-4
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced package with earless flange.
Features
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 100 mA,
VGS(PEAK) = –5.0 V, ƒ = 2635 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
•ꢀ GaN on SiC HEMT technology
•ꢀ Input matched
•ꢀ Typical pulsed CW performance, 2605 MHz, 48 V,
combined outputs, 16 µs pulse width
28
24
20
16
12
8
70
- Output power at P
- Efficiency = 62%
- Gain = 14.4 dB
= 250 W
3dB
50
Efficiency
•ꢀ Capable of handling 10:1 VSWR @48 V, 38 W
30
(CW) output power
Gain
10
•ꢀ Human Body Model Class 1A (per ANSI/ESDA/
JEDEC JS-001)
-10
-30
-50
-70
•ꢀ Low thermal resistance
•ꢀ Pb-free and RoHS compliant
PAR @ 0.01% CCDF
4
0
gtra262802fc_g1
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)
= 48 V, I = 100 mA, V = V = 200 mA – 2.05 V, P = 38 W avg, ƒ = 2635 MHz, 3GPP signal, 3.84 MHz
V
DD
I
DQ
GS(peak)
GS @ DQ
OUT
channel bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
13.5
49
Typ
14
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
54
—
%
Adjancent Channel Power Ratio
ACPR
—
–28
–24.5
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-07-24
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTRA262802FC
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage (main) V = –8 V, I = 10 mA
V
GS
D
(BR)DSS
(BR)DSS
(peak) V = –8 V, I = 10 mA
V
—
—
V
GS
D
Drain-source Leakage Current
Gate Threshold Voltage (main)
(peak)
V
GS
= –8 V, V = 10 V
I
DSS
—
5
mA
V
DS
V
= 10 V, I = 10.8 mA
V
GS(th)
–3.5
–3.5
–3
–3
–2.5
–2.5
DS
DS
D
V
= 10 V, I = 20 mA
V
GS(th)
V
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
55
Unit
V
Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 48 V, I = 100 mA
V
GS(Q)
—
–3.0
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current (main)
(peak)
V
DSS
V
GS
–10 to +2
10.8
V
I
mA
mA
A
G
G
I
20
Drain Current (main)
(peak)
I
I
4.0
D
D
7.5
A
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceed-
ing only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the
operating voltage range (V ) specified above.
DD
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance (main, T
= 70 °C, 38 W CW)
R
1.71
°C/W
CASE
JC
q
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
Rev. 03, 2018-07-24
GTRA262802FC
3
Ordering Information
Type and Version
Order Code
Package Description
H-37248C-4
Shipping
GTRA262802FC V2 R0
GTRA262802FC V2 R2
GTRA262802FC-V2-R0
GTRA262802FC-V2-R2
Tape & Reel, 50 pcs
Tape & Reel, 250 pc
H-37248C-4
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 100 mA,
VGS(PEAK) = –5.0 V, POUT = 45.8 dBm,
3GPP WCDMA signal, PAR = 10 dB
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 100 mA,
VGS(PEAK) = –5.0 V, ƒ = 2635 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
0
-10
-20
-30
-40
-50
-60
-70
70
60
50
40
30
20
10
0
20
18
16
14
12
60
50
40
30
20
Efficiency
Gain
ACPU
ACPL
Efficiency
gtra262802fc_g3
gtra262802fc_g2
2450 2500 2550 2600 2650 2700 2750
25
30
35
40
45
50
55
Frequency (MHz)
Average Output Power (dBm)
Rev. 03, 2018-07-24
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTRA262802FC
4
Typical Performance (cont.)
Pulse CW Performance
VDD = 48 V, IDQ(MAIN) = 100 mA,
VGS(PEAK) = –5.0 V
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 100 mA,
VGS(PEAK) = -5.0 V, POUT = 45.8 dBm,
3GPP WCDMA signal, PAR = 10 dB
20
18
16
14
12
10
8
75
65
55
45
35
25
15
-10
-15
-20
-25
-30
-35
-5
-10
-15
-20
-25
-30
2635MHz Gain
2575MHz Gain
2605MHz Gain
2575MHz Eff
2605MHz Eff
2635MHz Eff
ACPU
ACPL
IRL
gtra262802fc_g4
gtra262802fc_g5.1
2450 2500 2550 2600 2650 2700 2750
33
37
41
45
49
53
57
Frequency (MHz)
Output Power (dBm)
Pulse CW Performance at various VDD
IDQ(MAIN) = 100 mA, VGS(PEAK) = –5 V,
ƒ = 2635 MHz
CW Performance Small Signal
Gain & Input Return Loss
VDD = 48 V, IDQ(MAIN) = 100 mA,
VGSPEAK = –5.0 V
20
75
65
55
45
35
25
15
18
-2
18
16
14
12
10
8
Gain
17
16
15
14
13
-4
-6
IRL
-8
44V Gain
48V Gain
52V Gain
44V Eff
-10
-12
48V Eff
gtra262802fc_g6.1
gtra262802fc_g7
33
37
41
45
49
53
57
2400
2500
2600
2700
2800
Output Power (dBm)
Frequency (MHz)
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
Rev. 03, 2018-07-24
GTRA262802FC
5
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I
= 100 mA, Class AB
DQ
P
3dB
Max Output Power
Max Drain Efficiency
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
P
P
Gain
[dB]
P
P
3dB
[W]
hD
hD
3dB
3dB
[W]
3dB
[dB]
16.28
16.15
15.71
[dBm]
51.00
50.91
50.81
[dBm]
49.13
49.67
49.04
[%]
[%]
2550
2620
2690
24.62-j26.07 6.32-j4.58
27.89-j15.25 7.12-j4.87
125.89
123.31
120.50
64.9
66.4
64.8
4.21-j0.93
4.75-j1.63
4.46-j1.56
18.05
17.64
17.52
81.75
92.60
80.09
77.8
77.2
76.5
37.33-j8.37
7.07-j5.42
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 48 V, I
= 200 mA, Class AB
DQ
P
3dB
Max Output Power
Max Drain Efficiency
Zs
[W]
Zl
[W]
Zl
[W]
Freq
[MHz]
Gain
P
P
Gain
[dB]
P
P
3dB
[W]
hD
hD
3dB
3dB
[W]
3dB
[dB]
15.03
15.31
15.18
[dBm]
53.81
53.31
53.45
[dBm]
52.20
51.97
52.14
[%]
[%]
2550
2620
2690
7.71-j18.49
4.94-j4.23
240.38
214.29
221.31
64.0
61.0
60.8
2.92-j1.60
2.98-j1.60
3.13-j1.73
16.74
16.84
16.72
165.84
157.29
163.64
73.7
71.7
71.6
11.70-j15.12 4.83-j4.21
14.78-j11.61 4.83-j4.33
See next page for Reference Circuit
Rev. 03, 2018-07-24
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
GTRA262802FC
6
Reference Circuit, 2575 – 2635 MHz
RO4350, 20 MIL
RO4350, 20 MIL
VDD
C205
VGS(MAIN)
C102
C204
C101
C201
C202C203
R101
C206
C104
C207
C209
C103
RF_IN
C208
RF_OUT
U1
C105
R103
R102
C210
C211
C212C213
C106
C214
VGS(PEAK)
C107
C215
VDD
GTRA262802FC_IN_01
GTRA262802FC_OUT_01
g
t r a 2 6 2 8 0 2 f c _ C D _ 0 3 - 2 0 - 2 0 1 7
Reference circuit assembly diagram (not to scale)
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
Rev. 03, 2018-07-24
GTRA262802FC
7
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
GTRA262802FC V2
Test Fixture Part No.
PCB
LTA/GTRA262802FC V2
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2575 – 2635 MHz
Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C104, C105,
C106
Capacitor, 10 pF
ATC
ATC600F100JT250XT
C102, C107
C103
Capacitor, 10 µF
Capacitor, 0.5 pF
Resistor, 20 ohms
Resistor, 50 ohms
Hybrid coupler
Taiyo Yuden
UMK325C7106MM-T
ATC600F0R5BT250XT
ERJ-8GEYJ200V
C8A50Z4A
ATC
R101, R102
R103
Panasonic Electronic Components
Richardson
Anaren
U1
X3C26P1-03S
Output
C201, C207, C209,
C211
Capacitor, 10 pF
Capacitor, 10 µF
ATC
ATC600F100JT250XT
UMK325C7106MM-T
C202, C203, C204,
C212, C213, C214
Taiyo Yuden
C205, C215
C206
Capacitor, 470 µF
Capacitor, 0.8 pF
Capacitor, 0.2 pF
Capacitor, 0.5 pF
Cornell Dubilier Electronics (CDE)
SEK471M050ST
ATC
ATC
ATC
ATC600F0R8BT250XT
ATC600F0R2BT250XT
ATC600F0R5BT250XT
C208
C210
Pinout Diagram (top view)
S
Peak
Main
Pin
D1
D2
G1
G2
S
Description
D1
D2
Drain Device 1 (Main)
Drain Device 2 (Peak)
Gate Device 1 (Main)
Gate Device 2 (Peak)
Source (flange)
H-37248-4__do_pd_10-10-2012
G1
G2
Lead connections for GTRA262802FC V2
Rev. 03, 2018-07-24
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTRA262802FC
8
Package Outline Specifications
Package H-37248C-4
(8.89
[.350])
(5.08
45° X 2.72
[.107]
[.200])
C
L
4.83±0.51
[.190±0.020]
D1
D2
9.78
[.385]
(19.43
[.765])
C
L
G1
G2
+0.38
R0.51
R.020
–0.13
+.015
–.005
3.81
[.150]
12.70
[.500]
3.78±0.25
[.149±0.010]
19.81±0.20
[.780±0.008]
1.02
[.040]
C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016
C
L
SPH 1.57
[.062]
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm, alternate dimensions are inches
3. All tolerances ꢀ.12ꢁ ꢂꢀ.ꢀꢀ5ꢃ
4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange)
5. Lead thickness: ꢀ.13 ꢀ.ꢀ5 ꢂꢀ.ꢀꢀ5 ꢀ.ꢀꢀ2ꢃ
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-07-24
GTRA262802FC
9
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
Data Sheet reflects released product specification
Updated operating voltage
01
2016-05-26
2017-03-22
2017-09-19
2018-07-24
02
Production
Production
Production
All
02.1
03
2
All
Revised to V2. Converted to Wolfspeed data sheet.
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © ꢀꢁ1ꢂ Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 03, 2018-07-24
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