GTVA101K42EV [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 â 1215 MHz;
| 型号： | GTVA101K42EV |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 â 1215 MHz |
| 文件： | 总4页 (文件大小：1355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance GTVA101K42EV
Thermally-Enhanced High Power RF GaN on SiC HEMT
1400 W, 50 V, 960 – 1215 MHz
Advance Specification Data
Sheets describe products that are
being considered by Wolfspeed
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Wolfspeed about the fu-
ture availability of these products.
Description
The GTVA101K42EV is a 1400-watt GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced surface-mount package with bolt-down flange.
Features
•ꢀ GaN on SiC HEMT technology
•ꢀ Input matched
•ꢀ Typical Pulsed CW performance, 960 – 1215 MHz, 50 V, single
side, 128 µs pulse width, 10% duty cycle
- Output power at P
- Efficiency = 68%
- Gain = 17 dB
= 1400 W
3dB
•ꢀ Pb-free and RoHS compliant
GTVA101K42EV
Package H-36275-4
Target RF Characteristics
Pulsed CW Specifications (tested in Wolfspeed test fixture)
V
DD
= 50 V, I
= 200 mA, P
= 1400 W peak, ƒ = 960 to 1215 MHz, pulse width = 128 µs, 10% duty cycle
DQ
OUT (P3dB)
Characteristic
Linear Gain
Symbol
Min
—
Typ
17
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
68
—
%
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02, 2018-04-03
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
2
Advance GTVA101K42EV
DDC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
= –8 V, I = 100 mA
V
(BR)DSS
D
V
GS
= –8 V, V = 10 V
I
DSS
—
5
mA
V
DS
V
= 10 V, I = 200 mA
V
GS(th)
–3.8
–3.0
–2.7
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
55
Unit
V
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 50 V, I = 200 mA
V
GS(Q)
—
–3.1
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
TBD
V
I
mA
A
G
Drain Current
I
TBD
D
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Chracteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
TBD
°C/W
qJC
Ordering Information
Type and Version
Order Code
TBD
Package Description
H-36275-4, bolt-down
H-36275-4, bolt-down
Shipping
GTVA101K42EV V1 R0
GTVA101K42EV V1 R2
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
TBD
Evaluation Boards
Order Code
Frequency
Description
LTN/GTVA101K42EV E1
LTN/GTVA101K42EV E2
960 – 1215 MHz
1030 MHz
Class AB, combined outputs, RO4350B, 0.508mm thick
Class AB, combined outputs, RO4350B, 0.508mm thick
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2018-05-01
3
Advance GTVA101K42EV
Pinout Diagram (top view)
D1
D2
G2
Pin
D1
D2
G1
G2
S
Description
S
Drain Device 1
Drain Device 2
Gate Device 1
Gate Device 2
Source (flange)
G1
H-36275-4_pd_03-28-2013
Package Outline Specifications
Package H-36275-4
13.72
[.540]
2X 45° X 1.19
[45° X .047]
2x 2.03
C
L
[.080]
2X R1.59
[R.062]
REF
3.23±0.51
[.127±.020]
D1
G1
D2
S
16.612±0.500
[.654±.020]
9.144
[.360]
C
L
10.16
[.400]
G2
+0.13
8X R0.51
-0.51
+.005
R.020
C
C
L
[
]
-.020
L
4X 11.68
[.460]
35.56
[1.400]
2.13
+0.25
4.58
-0.13
+.010
-.005
[.084] SPH
31.242±0.280
[1.230±.011]
.180
[
]
1.63
[.064]
H-36275-4_po_01_10-22-2012
C
C
C
L
L
L
41.15
[1.620]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: ꢀ.12ꢁ ꢀ.ꢀ51 mm ꢂꢀ.ꢀꢀ5 ꢀ.ꢀꢀ2 inchꢃ.
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.
Rev. 02, 2018-05-01
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
4
Advance GTVA101K42EV
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
Added evaluation boards information
01
2016-10-13
2017-07-31
2018-05-01
01.1
02
Advance
2
Advance
All, 2, 3
Converted to Wolfspeed Data Sheet, updated DC characteristics and max ratings table format,
added pinout diagram
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © ꢀꢁꢂ8 Cree, Inc. All rights reserved. The informꢃtion in this document is subject to chꢃnge without notice. Wolfspeed™ ꢃnd the Wolfspeed logo ꢃre trꢃdemꢃrks of Cree, Inc.
www.wolfspeed.com
Rev. 02, 2018-05-01
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