MTA050P01Q8-0-T3-G [CYSTEKEC]
P-Channel Enhancement Mode MOSFET;
| 型号： | MTA050P01Q8-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDSON@VGS=-4.5V, ID=-5A
RDSON@VGS=-2.5V, ID=-4A
-14V
-7A
-5.6A
MTA050P01Q8
37.4mΩ(typ)
53.0mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTA050P01Q8
SOP-8
D
D
D
D
G：Gate
G
S：Source
D：Drain
S
S
S
Pin 1
Ordering Information
Device
Package
Shipping
2500 pcs/ Tape & Reel
SOP-8
MTA050P01Q8-0-T3-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Symbol
BVDSS
VGS
Limits
-14
±8
Unit
V
Continuous Drain Current @ VGS=-10V, TA=25°C (Note 1)
-7
ID
Continuous Drain Current @ VGS=-10V, TA=70°C (Note 1)
Pulsed Drain Current (Note 2)
-5.6
-40
A
IDM
IS
Continuous Source-Drain Diode Current
-5
-20
64
3.1
2
Avalanche Current @ L=0.1mH
IAS
EAS
Avalanche Energy @ L=1mH, ID=-8A, VDD=-10V (Note 3)
mJ
W
TA=25 °C
Total Power Dissipation (Note 1)
TA=70 °C
PD
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : 1.Surface mounted on FR-4 board, t≤10sec.
2.Pulse width ≤300μs, Duty Cycle≤2%
3.Device capability determined by design, not guaranteed by 100% tested.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
25
40 (Note )
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
-14
-0.4
-
-
-
-
-
-
-1.0
±100
-1
-5
50
VGS=0V, ID=-250μA
V
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-12V, VGS=0V
VDS=-12V, VGS=0V, Tj=55 C
VGS=-4.5V, ID=-5A
-
-
-
-
-
-
nA
μA
IDSS
°
37.4
53.0
6.5
*RDS(ON)
*GFS
mΩ
85
-
VGS=-2.5V, ID=-4A
VDS=-5V, ID=-3A
S
Dynamic
Ciss
-
-
-
-
-
-
-
643
138
122
4.4
14
44.8
7.8
965
pF
ns
VDS=-10V, VGS=0V, f=1MHz
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
-
-
-
-
-
-
Ω
VDD=-10V, ID=-5A, VGS=-5V, RG=1
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
*Qg
*Qgs
*Qgd
4.4
-
-
8.8
1.2
3
13.2
-
-
nC
VDS=-10V, VGS=-4.5V, ID=-5A
Source Drain Diode
*IS
*ISM
*VSD
trr
-
-
-
-
-
-
-
-7
-40
-1.2
30
-
A
-0.92
20
3.5
V
ns
nC
VGS=0V, IS=-5A
IF=-5A, dIF/dt=100A/μs
Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
40
-4V
-3.5V
-3V
-10V
35
-5V
30
-4.5V
25
20
15
10
5
-2.5V
-2V
VGS=-1.5V
ID=-250μA,
VGS=0V
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
100
1.2
VGS=-1.8V
VGS=-2.5V
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
Tj=150°C
VGS=-4.5V
10
0
2
4
6
8
10
0.01
0.1
1
10
100
D
S
-I , Drain Current(A)
-I , Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0.0
100
90
80
70
60
50
40
30
20
10
0
VGS=-4.5V, ID=-5A
ID=-5A
ID=-4A
RDS(ON)@Tj=25°C : 37.4mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
ID=-1mA
Ciss
1000
0.8
0.6
0.4
C
oss
ID=-250μA
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
-VDS, Drain-Source Voltage(V)
8
10
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=-10V
Gate Charge Characteristics
10
1
8
7
6
5
4
3
2
1
0
VDS=-15V
0.1
0.01
VDS=-10V
Pulsed
TA=25°C
ID=-5A
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
0
2
4
6
Qg, Total Gate Charge(nC)
8
10 12 14 16 18 20
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
9
8
7
6
5
4
3
2
1
0
100
RDS(ON)
Limited
100μs
10
1
1ms
10ms
100ms
1s
DC
0.1
0.01
TA=25°C, Tj=150°C, VGS=-4.5V
JA
TA=25°C, Tj=150°C, VGS=-4.5V
θ
θ
R
=40°C/W
R
JA=40°C/W, Single Pulse
25
50
75
100
125
150
175
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
40
300
250
200
150
100
50
VDS=-5V
TJ(MAX)=150°C
TA=25°C
30
20
10
0
θJA
=40°C/W
R
0
0
1
2
3
4
5
0.0001 0.001
0.01
0.1
Pulse Width(s)
1
10
100
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JA
θ
θ
1.R JA(t)=r(t)*R
0.1
0.01
1
2.Duty Factor, D=t /t
2
0.05
DM
θ
3.TJM-TA=P *R JA(t)
JA=40 C/W
θ
4.R
°
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
Time 25 °C to peak temperature
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTA050P01Q8
CYStek Product Specification
Spec. No. : C101Q8
Issued Date : 2017.03.31
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOP-8 Dimension
Marking:
Device Name
Date Code
A050
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2
nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : prodcution serial number, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
Max.
Max.
0.069
0.010
0.061
0.020
0.010
0.200
Min.
3.800
5.800
Max.
4.000
6.200
Min.
0.150
0.228
Max.
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
1.750
0.250
1.550
0.510
0.250
5.100
0.053
0.004
0.053
0.013
0.006
0.185
E
E1
e
L
θ
1.270 (BSC)
0.050 (BSC)
0.400
0
1.270
8°
0.016
0
0.050
8°
c
D
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA050P01Q8
CYStek Product Specification
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