MTB020N06KH8-0-T6-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB020N06KH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：529K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
60V
42A
7.8A
MTB020N06KH8
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=8A
RDS(ON)@VGS=4.5V, ID=6A
RDS(ON)@VGS=4V, ID=4A
12.2mΩ(typ)
15.6mΩ(typ)
17.6mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• Pb-free lead plating and Halogen-free package
Symbol
Outline
DFN5×6
MTB020N06KH8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
Package
Shipping
3000 pcs / tape & reel
DFN 5 ×6
MTB020N06KH8-0-T6-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
(Note 1)
VDS
VGS
60
±20
42
29.7
7.8
6.2
168
8
64
7
71
35.5
2.0
1.3
V
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current
(Note 5)
(Note 5)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
ID
IDSM
A
IDM
IAS
EAS
EAR
Single Pulse Avalanche Energy @ L=2mH, ID=8A, VDD=15V
Repetitive Avalanche Energy
mJ
TC=25°C
TC=100°C
TA=25°C
TA=70°C
PD
Power Dissipation
W
PDSM
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Tj, Tstg -55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.1
62
Unit
°C/W
°
Note : 1.The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C, and the maximum temperature of 175
°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
°
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C. 100% tested by conditions of VDD=15V,
ID=6A, L=1mH, VGS=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
.
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
60
-
1
-
-
-
-
-
-
-
-
0.06
-
14.9
-
-
-
2.5
-
10
1
5
17
21
31
V
V/°C
V
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
*GFS
IGSS
S
±
±
VGS= 16V
μA
-
-
VDS =60V, VGS =0V
VDS =48V, VGS =0V, Tj=55°C
VGS =10V, ID=8A
VGS =4.5V, ID=6A
VGS =4V, ID=4A
IDSS
12.2
15.6
17.6
Ω
m
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
-
-
-
-
-
-
-
-
-
-
17
1.4
6.2
8.2
18.8
34.4
11
736
140
70
-
-
-
-
-
-
-
-
-
-
nC
VDS=30V, ID=8A, VGS=10V
VDS=30V, ID=8A, VGS=10V, RG=6
VGS=0V, VDS=20V, f=1MHz
Ω
ns
pF
A
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
0.8
14
8.6
42
168
1.2
-
V
ns
nC
IS=8A, VGS=0V
VGS=0V, IF=8A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 10
Recommended Soldering Footprint
unit : mm
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
100
90
80
70
60
50
40
30
20
10
0
10V,9V,8V,7V,6V,5V
4.5V
0.8
0.6
0.4
4V
ID=250μA,
VGS=0V
3.5V
VGS
=
3V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
10
1
VGS=4V
1.0
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
VGS=4.5V
VGS=10V
0.1
1 10
ID, Drain Current(A)
100
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
90
80
70
60
50
40
30
20
10
0
2.4
VGS=10V, ID=8A
RDS(ON)@Tj=25°C : 12.2mΩ typ.
ID=8A
2.0
1.6
1.2
0.8
0.4
VGS=4.5V, ID=6A
RDS(ON)@Tj=25°C : 15.6mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 10
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
ID=1mA
1000
C
oss
100
10
Crss
μ
ID=250 A
f=1MHz
5
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
ID=8A
8
6
4
2
0
VDS=30V
1
VDS=48V
VDS=10V
Pulsed
0.1
0.01
Ta=25°C
0
2
4
6
8
10 12 14 16 18 20
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
45
40
35
30
25
20
15
10
5
1000
100
10
10ms
1ms
100μs
RDS(ON)
Limited
100ms
TC=25°C, Tj(max)=175°C
θ
1
θ
Tj(max)=175°C,R JC=2.1°C/W,
VGS=10V,R JC=4.5°C/W
DC
VGS=10V, Single Pulse
Single Pulse
0
0.1
25
50
75
100 125
150 175
200
0.1
1
10
100
V
DS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 10
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Case
100
90
80
70
60
50
40
30
20
10
0
1000
900
800
700
600
500
400
300
200
100
0
VDS=10V
TJ(MAX)=175°C
TC=25°C
R
θ
JC=2.1°C/W
0.0001
0.001
0.01
Pulse Width(s)
0.1
1
10
0
1
2
3
4
GS, Gate-Source Voltage(V)
5
6
V
Transient Thermal Response Curves
1
D=0.5
0.2
θ
θ
JC
1.R JC(t)=r(t)*R
2.Duty Factor, D=t1/t2
θ
0.1
3.TJM-TC=PDM*R JC(t)
0.05
0.02
0.01
θ
4.R JC=2.1°C/W
0.1
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 10
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N06KH8
CYStek Product Specification
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
CYStech Electronics Corp.
Page No. : 10/ 10
DFN5×6 Dimension
Marking:
Device Name
Date Code
B020
N06K
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2
nd code : month code, Jan→A, Feb→B, Mar→C,
Apr→D, May→E, Jun→F, Jul→G, Aug→H,
Sep→J, Oct→K, Nov→L, Dec→M
3
rd and 4th codes : prodcution serial number, 01~99
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
0.031
0.000
0.014
Millimeters
Inches
DIM
Min.
0.80
0.00
0.35
Max.
Max.
0.039
0.002
0.019
Min.
5.70
Max.
5.90
Min.
Max.
A
A1
b
1.00
0.05
0.49
E
e
H
L1
G
K
0.224
0.232
1.27 BSC
0.050 BSC
5.95
0.10
6.20
0.18
0.234
0.004
0.244
0.007
c
0.254 REF
0.010 REF
D
F
4.90
5.10
0.193
0.201
0.60 REF
4.00 REF
0.024 REF
0.157 REF
1.40 REF
0.055 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB020N06KH8
CYStek Product Specification
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