MTB030N10RV8-0-T6-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB030N10RV8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB030N10RV8
BVDSS
100V
16.5A
5.7A
ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
27.4mΩ
33.1mΩ
VGS=10V, ID=20A
Features
RDSON(TYP)
VGS=4.5V, ID=20A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN3×3
MTB030N10RV8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB030N10RV8-0-T6-G
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
VDS
Limits
100
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
VGS
16.5
10.4
5.7
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
ID
IDSM
A
4.6
IDM
IAS
66 *1
Avalanche Current @ L=0.1mH
28
128
EAS
mJ
W
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
TC=25℃
21
PD
TC=100℃
Total Power Dissipation
8.4
TA=25℃
2.5 *2
1.6 *2
-55~+150
PDSM
TA=70℃
Operating Junction and Storage Temperature Range
Tj, Tstg
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature.
Symbol
Value
6
50 *2
Unit
RθJC
°C/W
RθJA
2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice RθJA will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=0.1mH, IAS=17A, VGS=10V, VDD=25V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
100
-
-
2.5
-
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=5A
V
1
-
-
-
-
-
-
-
11.9
-
-
-
S
nA
*1
±
100
1
±
IGSS
VGS= 20V, VDS=0V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=55°C
VGS =10V, ID=20A
IDSS
μA
5
38
45
27.4
33.1
Ω
m
RDS(ON) *1
Dynamic
VGS =4.5V, ID=20A
Ciss
Coss
Crss
-
-
-
-
-
-
1703
100
7
27.8
6.3
3.7
-
-
-
42
-
-
pF
VDS=50V, VGS=0V, f=1MHz
VDS=50V, VGS=10V, ID=20A
Qg
*1, 2
*1, 2
*1, 2
nC
Qgs
Qgd
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
td(ON) *1, 2
Min.
Typ.
13.6
13.8
40
4
1.9
Max.
20
21
60
6
Unit
Test Conditions
-
-
-
-
-
VDS=50V, ID=20A, VGS=10V,
tr
*1, 2
ns
td(OFF) *1, 2
RGS=1Ω
tf
*1, 2
f=1MHz
Ω
Rg
-
Source-Drain Diode
-
-
-
IS
VSD *1
trr
16.5
1
-
*1
A
V
ns
nC
0.74
21.3
19.7
IS=1A, VGS=0V
-
-
IF=1A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
Recommended Soldering Footprint
unit : mm
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
50
40
30
20
10
0
4
V
,
10V 9V,8V,7V, 6V, 5V
3.5V
0.8
0.6
μ
ID=250 A,
VGS=3V
8
VGS=0V
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
2
4
6
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1
Tj=25°C
VGS=3V
0.8
0.6
0.4
0.2
VGS=4.5V
10V
Tj=150°C
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
ID, Drain Current(A)
I
DR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
150
120
90
60
30
0
VGS=10V, ID=20A
RDSON@Tj=25°C : 27.4mΩ typ.
ID=20A
2
1.6
1.2
0.8
0.4
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB030N10RV8
CYStek Product Specificati
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
10000
Ciss
1000
ID=1mA
C
oss
100
10
1
0.8
0.6
0.4
0.2
I =250 A
μ
D
Crss
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
DS, Drain-Source Voltage(V)
40
50
V
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=20V, 50V, 80V
from left to right
VDS=10V
8
6
4
2
0
1
VDS=15V
0.1
0.01
Pulsed
Ta=25°C
ID=20A
0
3
6
9
12 15 18 21 24 27 30
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
100
10
RDS(ON)
Limited
100 s
μ
1ms
1
10ms
100ms
0.1
0.01
TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W, Single Pulse
1s
TA=25°C, VGS=10V, R =50°C/W
θJA
Single Pulse
DC
25
50
75
100
125
150
175
0.01
0.1
V
1
10
100
1000
DS, Drain-Source Voltage(V)
Tj, Junctione Temperature(°C)
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
300
250
200
150
100
50
VDS=10V
40
TJ(MAX)=150°C
TA=25°C
R
=50°C/W
θJA
30
20
10
0
0
0.0001 0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JA
1.Rθ (t)=r(t)*Rθ
JA
0.1
1
2
2.Duty Factor, D=t /t
0.05
JM
A
DM
JA
3.T -T =P *Rθ (t)
=50
4.Rθ
JA
°C/W
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
100°C
150°C
150°C
200°C
60-120 seconds
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
Time 25 °C to peak temperature
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB030N10RV8
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.10.20
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D D D
B030
N10R
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
Min.
0.118
0.094
DIM
Min.
0.70
0.25
0.10
3.25
3.00
1.48
Max.
Max.
0.031
0.014
0.010
0.136
0.126
0.066
Min.
3.00
2.39
Max.
3.20
2.59
Max.
0.126
0.102
A
b
c
0.80
0.35
0.25
3.45
3.20
1.68
0.028
0.010
0.004
0.128
0.118
0.058
E1
E2
e
H
L
L1
θ
M
0.65 BSC
0.026 BSC
D
0.30
0.30
0.50
0.50
0.012
0.012
0.020
0.020
D1
D2
D3
E
0.13 TYP
0.005 TYP
8°
8°
12°
12°
0.13 TYP
0.005 TYP
3.20
3.40
0.126
0.134
-
0.15
-
0.006
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB030N10RV8
CYStek Product Specification
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