MTB050P10E3-0-UB-S [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB050P10E3-0-UB-S |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
BVDSS
-100V
-40A
MTB050P10E3
ID @ VGS=-10V
46mΩ
52mΩ
RDSON(TYP) @ VGS=-10V, ID=-20A
RDSON(TYP) @ VGS=-4.5V, ID=-15A
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
Outline
TO-220
MTB050P10E3
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Device
Package
Shipping
TO-220
(Pb-free lead plating package)
MTB050P10E3-0-UB-S
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-100
±20
-40
Continuous Drain Current @ TC=25C, VGS=-10V
Continuous Drain Current @ TC=100C, VGS=-10V
Pulsed Drain Current
Continuous Drain Current @ TA=25C , VGS=10V
Continuous Drain Current @ TA=70C , VGS=10V
Avalanche Current
ID
-28
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
IDM
IDSM
-140
-3.9
-3.1
25
221
20
200
100
2
A
IAS
EAS
EAR
Avalanche Energy @ L=1mH, ID=-21A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
mJ
W
TC=25°C
TC=100°C
Power Dissipation
PD
TA=25°C
Power Dissipation
PDSM
W
TA=70°C
1.3
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Value
0.75
62
Unit
C/W
C/W
(Note 1)
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 3/8
Characteristics (TC=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
-100
-1.0
-
-1.3
34
-
-
-
-
-2.5
-
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-5V, ID=-20A
V
-
-
-
-
-
-
S
nA
±
100
-1
±
IGSS
VGS= 20V
VDS =-80V, VGS =0V
IDSS
μA
-25
60
70
VDS =-80V, VGS =0V, Tj=125C
46
52
VGS =-10V, ID=-20A
VGS =-4.5V, ID=-15A
Ω
m
*RDS(ON)
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
45
9.6
11
-
-
-
-
-
-
-
-
-
-
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
nC
ID=-21A, VDS=-50V, VGS=-10V
9.6
16.4
81.2
29.4
3233
227
141
4.3
Ω
ns
VDS=-20V, ID=-1A, VGS=-10V, RG=6
pF
VGS=0V, VDS=-25V, f=1MHz
f=1MHz
Ω
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
-40
-140
-1.2
-
A
0.84
29
37
V
ns
nC
IS=-20A, VGS=0V
IF=-20A, VGS=0V, dI/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
100
-
10V
90
80
70
60
50
40
30
20
10
0
-9V
-8V
-7V
-6V
-5V
VGS=-4V
VGS=-3V
0.8
0.6
0.4
ID=-250μA,
VGS=0V
VGS=-2V
VGS=-2.5V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
VGS=-2V
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1
VGS=-3V
Tj=25°C
VGS=-2.5V
VGS=-4.5V
0.8
0.6
0.4
0.2
VGS=-10V
Tj=150°C
0.1
1
10
100
0
4
8
12
16
20
-ID, Drain Current(A)
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=-10V, ID=-20A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
100
80
2.4
2
ID=-20A
1.6
1.2
0.8
0.4
0
60
40
RDS(ON)@Tj=25°C : 46mΩ typ.
20
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 5/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=-1mA
1000
0.8
0.6
0.4
C
oss
ID=-250μA
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175 200
0.1
1
10
100
Tj, Junction Temperature(°C)
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=-50V
ID=-21A
8
6
4
2
0
1
VDS=-5V
Pulsed
0.1
0.01
Ta=25°C
0
10
20
30
40
50
60
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
40
30
20
10
0
1000
100
10
RDS(ON)
Limit
10
s
μ
100μs
1ms
10ms
100ms
DC
TC=25°C, Tj=175°C,
JC
GS=10V,Rθ =0.75°C/W
1
V
single pulse
JC
VGS=10V, Rθ =0.75°C/W
0.1
0
25
50
75 100 125 150 175 200
0.1
1
10
100
1000
TC, Case Temperature(°C)
-VDS, Drain-Source Voltage(V)
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 6/8
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
100
90
80
70
60
50
40
30
20
10
0
VDS=-10V
TJ(MAX)=175°C
TC=25°C
θJC=0.75°C/W
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
JC
θ
1.R JC(t)=r(t)*Rθ
0.2
1
2
2.Duty Factor, D=t /t
JM
C
DM
θJC
3.T -T =P *R (t)
JC
4.Rθ =0.75 °C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
240 +0/-5 C
260 +0/-5 C
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB050P10E3
CYStek Product Specification
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
CYStech Electronics Corp.
Page No. : 8/8
TO-220 Dimension
Marking:
4
Device Name
Date Code
B050
P10
□□□□
1 2 3
3-Lead TO-220 Plastic Package
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
CYStek Package Code: E3
*: Typical
Millimeters
Inches
Min.
Millimeters
Min. Max.
2.540*
4.980
2.650
7.900
0.000
Inches
DIM
DIM
Min.
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
Min.
Max.
A
A1
b
b1
c
c1
D
E
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.950
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
e
e1
F
H
h
L
L1
V
0.100*
5.180
2.950
8.100
0.300
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
12.900 13.400
2.850
3.250
7/500 REF
0.295 REF
Φ
12.950
0.510
E1
12.650
0.498
3.400
3.800
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB050P10E3
CYStek Product Specification
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