MTB40P06AV8-0-T6-G [CYSTEKEC]

P-Channel Enhancement Mode MOSFET;


型号：	MTB40P06AV8-0-T6-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	P-Channel Enhancement Mode MOSFET
文件：	总9页 (文件大小：445K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

P-Channel Enhancement Mode MOSFET

BVDSS

-60V

-5A

MTB40P06AV8

ID@T =25°C, VGS=-10V

RDSON@VGS=-10V, ID=-4.9A

RDSON@VGS=-4.5V, ID=-3A

45mΩ(typ)

54mΩ(typ)

Description

The MTB40P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

• Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTB40P06AV8

DFN3×3

Pin 1

G：Gate S：Source D：Drain

Ordering Information

Device

Package

DFN3×3

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / tape & reel

MTB40P06AV8-0-T6-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T1 : 3000 pcs / tape & reel,7” reel

Product rank, zero for no rank products

Product name

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

VDS

Limits

-60

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

-14

Continuous Drain Current @ TC=25°C, VGS=-10V

Continuous Drain Current @ TC=100°C, VGS=-10V

Continuous Drain Current @ TA=25°C, VGS=-10V

Continuous Drain Current @ TA=70°C, VGS=-10V

Pulsed Drain Current

-8.9

IDM

-5

-4

-56 *1

TC=25℃

TC=100℃

Total Power Dissipation

TA=25℃

8.4

2.5 *3

1.6 *3

-55~+150

TA=70℃

Operating Junction and Storage Temperature Range

Tj, Tstg

°C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

Symbol

RθJC

RθJA

Value

Unit

°C/W

50 *3

3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

I_GSS

I_DSS

-60

-1.0

-2.5

±100

-1

-25

V_GS=0V, I_D=-250μA

V_DS=V_GS, I_D=-250μA

V_GS=±20V, V_DS=0V

V_DS=-60V, V_GS=0V

V_DS=-48V, V_GS=0V, Tj=125 C

V_GS=-10V, I_D=-4.9A

V_GS=-4.5V I_D=-3A

μA

R_{DS(ON) *1}

mΩ

G_FS

V_DS=-5V, I_D=-4.9A

Dynamic

Ciss

Coss

Crss

1273

V_DS=-25V, V_GS=0V, f=1MHz

V_DS=-30V, I_D=-1A, V_GS=-10V,

t_{d(ON) *1, 2}

6.2

16.4

138.8

53.8

*1, 2

R_G=6

t_{d(OFF) *1, 2}

t_f

*1, 2

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

24.3

4.3

*1, 2

Qgs

Qgd

*1, 2

V_DS=-48V, I_D=-5A, V_GS=-10V

Source-Drain Diode

V_{SD *1}

trr

Qrr

-0.83

9.8

-1.3

I_S=-4.9A, V_GS=0V

I_F=-5A, dI_F/dt=100A/μs

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended Soldering Footprint

unit : mm

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V, 9V, 8V, 7V, 6V, 5V

3.5V

0.8

0.6

0.4

I_D=-250 A,

-V_GS=2.5V

V_GS=0V

-75 -50 -25

25 50 75 100 125 150 175

-V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

V_GS=-4V

Reverse Drain Current vs Source-Drain Voltage

100

1.2

V_GS=0V

0.8

0.6

0.4

0.2

Tj=25°C

Tj=150°C

V_GS=-4.5V

V_GS=-10V

0.01

0.1

100

-I_D, Drain Current(A)

-I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

I_D=-4.9A

180

160

140

120

100

V_GS=-10V, I_D=-4.9A

1.6

1.2

0.8

0.4

R_DS(ON)@Tj=25°C : 45mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175

-V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

I_D=-1mA

1000

0.8

0.6

0.4

0.2

oss

100

I_D=-250μA

Crss

-75 -50 -25

25 50 75 100 125 150 175

-V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Maximum Safe Operating Area

Gate Charge Characteristics

100

R_DS(ON)

Limit

V_DS=-30V

V_DS=-12V

100 s

1ms

10ms

V_DS=-48V

100ms

0.1

0.01

T_A=25°C, Tj=150°, V_GS=-10V

_JA=50°C/W, Single Pulse

I_D=-5A

0.01

0.1

100

1000

-V_DS, Drain-Source Voltage(V)

Qg, Total Gate Charge(nC)

Forward Transfer Admittance vs Drain Current

Maximum Drain Current vs Junction Temperature

100

V_DS=-5V

Pulsed

0.1

Ta=25°C

T_A=25°C, V_GS=-10V, R _JA=50°C/W

0.01

100

125

150

175

0.001

0.01

0.1

100

T_J, Junction Temperature(°C)

-I_D, Drain Current(A)

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

Typical Transfer Characteristics

350

300

250

200

150

100

T_J(MAX)=150°C

T_A=25°C

V_DS=-10V

_JA=50°C/W

0.0001 0.001

0.01 0.1

Pulse Width(s)

100

-V_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.

0.2

1.R _JA(t)=r(t)*R

0.1

2.Duty Factor, D=t1/t2

0.05

3.T_JM-T_A=P_DM*R _JA(t)

4.R _JA=50°C/W

0.02

0.01

Single Pulse

1.E-02

0.001

1.E-04

1.E-03

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

217°C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 °C

260 +0/-5 °C

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB40P06AV8

CYStek Product Specification

Spec. No. : C796V8

Issued Date : 2016.03.15

Revised Date :

CYStech Electronics Corp.

Page No. : 9/9

DFN3×3 Dimension

Marking:

D D D D

B40

2611

P06A

Date

Code

8-Lead DFN3×3 Plastic Package

CYStek Package Code: V8

*: Typical

Millimeters

DIM

Inches

Millimeters

Inches

Min.

DIM

Min.

Max.

Min.

Max.

Min.

0.200

0.550

0.300

0.180

0.000

0.315

9°

Max.

0.400

0.750

0.500

0.480

0.100

0.515

13°

Max.

0.016

0.030

0.020

0.019

0.004

0.020

13°

0.605

0.850

0.026

0.033

0.008

0.022

0.012

0.007

0.000

0.012

9°

0.152 REF

0.006 REF

0.000

2.900

2.300

2.900

3.150

1.535

0.050

3.100

2.600

3.100

3.450

1.935

0.000

0.114

0.091

0.114

0.124

0.060

0.002

0.122

0.102

0.122

0.136

0.076

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB40P06AV8

CYStek Product Specification

MTB40P06AV8-0-T6-G [CYSTEKEC]

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