MTDP4953BDYQ8 [CYSTEKEC]

P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
MTDP4953BDYQ8
型号: MTDP4953BDYQ8
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P沟道增强型功率MOSFET

文件: 总6页 (文件大小:438K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C401Q8  
Issued Date : 2007.06.13  
Revised Date :  
CYStech Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET  
MTDP4953BDYQ8  
Page No. : 1/6  
Description  
The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best  
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.  
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications  
and suited for low voltage applications such as DC/DC converters.  
Features  
Ω
RDS(ON)=42m @VGS=-10V, ID=-5A  
Ω
RDS(ON)=70m @VGS=-4.5V, ID=-4A  
Simple drive requirement  
Low on-resistance  
Fast switching speed  
Pb-free package  
Applications  
Power management in notebook computer, portable equipment and battery powered systems.  
Equivalent Circuit  
Outline  
MTDP4953BDYQ8  
SOP-8  
GGate  
SSource  
DDrain  
MTDP4953BDYQ8  
CYStek Product Specification  
Spec. No. : C401Q8  
Issued Date : 2007.06.13  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/6  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Drain-Source Breakdown Voltage  
Gate-Source Voltage  
Symbol  
BVDSS  
VGS  
ID  
Limits  
Unit  
V
-30  
±20  
V
-5  
A
Continuous Drain Current @TA=25 °C (Note 1)  
Continuous Drain Current @TA=70 °C (Note 1)  
Pulsed Drain Current (Note 2)  
ID  
-4  
A
IDM  
-20  
A
Pd  
2
W
Total Power Dissipation (Note 1)  
Linear Derating Factor  
0.02  
-55~+150  
-55~+150  
62.5  
W / °C  
°C  
°C  
°C/W  
Operating Junction Temperature  
Storage Temperature  
Tj  
Tstg  
Thermal Resistance, Junction-to-Ambient (Note 1)  
Rth,ja  
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t10s.  
2.Pulse width 300μs, duty cycle2%  
Electrical Characteristics (Tj=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Static  
BVDSS  
VGS(th)  
IGSS  
-30  
-1  
-
-
-
-
-
-
-
-
-
-
-2.5  
±100  
-1  
42  
70  
V
V
nA  
μA  
VGS=0, ID=-250μA  
VDS=VGS, ID=-250μA  
VGS=±20V, VDS=0  
VDS=-24V, VGS=0  
ID=-5A, VGS=-10V  
ID=-4A, VGS=-4.5V  
IDSS  
*RDS(ON)  
mΩ  
-
*GFS  
-
5
-
S
VDS=-5V, ID=-5A  
Dynamic  
Ciss  
-
-
-
-
-
-
-
-
-
-
582  
125  
86  
9
10  
37  
23  
11.7  
2.1  
2.9  
-
-
-
-
-
-
-
-
-
-
pF  
ns  
VDS=-15V, VGS=0, f=1MHz  
VDS=-15V, ID=-1A,  
Coss  
Crss  
*td(ON)  
*tr  
*td(OFF)  
*tf  
*Qg  
Ω
Ω
VGS=-10V, RG=6 , RD=15  
VDS=-15V, ID=-5A,  
VGS=-10V,  
nC  
V
*Qgs  
*Qgd  
Source-Drain Diode  
*VSD  
-
-0.84  
-1.2  
VGS=0V, IS=-1.7A  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
MTDP4953BDYQ8  
CYStek Product Specification  
Spec. No. : C401Q8  
Issued Date : 2007.06.13  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/6  
Characteristic Curves  
MTDP4953BDYQ8  
CYStek Product Specification  
Spec. No. : C401Q8  
Issued Date : 2007.06.13  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/6  
Characteristic Curves(Cont.)  
MTDP4953BDYQ8  
CYStek Product Specification  
Spec. No. : C401Q8  
Issued Date : 2007.06.13  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/6  
Characteristic Curves(Cont.)  
MTDP4953BDYQ8  
CYStek Product Specification  
Spec. No. : C401Q8  
Issued Date : 2007.06.13  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/6  
SOP-8 Dimension  
Right side View  
Top View  
A
Marking:  
G
I
Device Name  
4953BDYSS  
Date Code  
□□□□  
C
B
H
J
D
Front View  
Part A  
E
K
Part A  
L
8-Lead SOP-8 Plastic Package  
CYStek Package Code: Q8  
N
M
O
F
*: Typical  
Inches  
DIM  
Millimeters  
Inches  
Millimeters  
DIM  
Min.  
Max.  
0.2007  
Min.  
Max.  
5.10  
3.95  
6.20  
1.32  
0.47  
3.88  
1.65  
5.10  
Min.  
Max.  
Min.  
Max.  
0.20  
0.70  
0.25  
0.52  
0.50  
0.13  
0.15  
A
B
C
D
E
F
0.1909  
0.1515  
0.2283  
0.0480  
0.0145  
0.1472  
0.0570  
0.1889  
4.85  
3.85  
5.80  
1.22  
0.37  
3.74  
1.45  
4.80  
I
J
0.0019  
0.0118  
0.0074  
0.0145  
0.0118  
0.0031  
0.0000  
0.0078  
0.0275  
0.0098  
0.0204  
0.0197  
0.0051  
0.0059  
0.05  
0.30  
0.19  
0.37  
0.30  
0.08  
0.00  
0.1555  
0.2441  
0.0519  
0.0185  
0.1527  
0.0649  
0.2007  
K
L
M
N
O
G
H
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTDP4953BDYQ8  
CYStek Product Specification  

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