MTDP4953BDYQ8 [CYSTEKEC]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET型号: | MTDP4953BDYQ8 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总6页 (文件大小:438K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDP4953BDYQ8
Page No. : 1/6
Description
The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Ω
• RDS(ON)=42m @VGS=-10V, ID=-5A
Ω
RDS(ON)=70m @VGS=-4.5V, ID=-4A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Applications
• Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
Outline
MTDP4953BDYQ8
SOP-8
G:Gate
S:Source
D:Drain
MTDP4953BDYQ8
CYStek Product Specification
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Symbol
BVDSS
VGS
ID
Limits
Unit
V
-30
±20
V
-5
A
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
ID
-4
A
IDM
-20
A
Pd
2
W
Total Power Dissipation (Note 1)
Linear Derating Factor
0.02
-55~+150
-55~+150
62.5
W / °C
°C
°C
°C/W
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
2.Pulse width ≤300μs, duty cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
-30
-1
-
-
-
-
-
-
-
-
-
-
-2.5
±100
-1
42
70
V
V
nA
μA
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-24V, VGS=0
ID=-5A, VGS=-10V
ID=-4A, VGS=-4.5V
IDSS
*RDS(ON)
mΩ
-
*GFS
-
5
-
S
VDS=-5V, ID=-5A
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
582
125
86
9
10
37
23
11.7
2.1
2.9
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=-15V, VGS=0, f=1MHz
VDS=-15V, ID=-1A,
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Ω
Ω
VGS=-10V, RG=6 , RD=15
VDS=-15V, ID=-5A,
VGS=-10V,
nC
V
*Qgs
*Qgd
Source-Drain Diode
*VSD
-
-0.84
-1.2
VGS=0V, IS=-1.7A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDP4953BDYQ8
CYStek Product Specification
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
CYStech Electronics Corp.
Page No. : 3/6
Characteristic Curves
MTDP4953BDYQ8
CYStek Product Specification
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
CYStech Electronics Corp.
Page No. : 4/6
Characteristic Curves(Cont.)
MTDP4953BDYQ8
CYStek Product Specification
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
CYStech Electronics Corp.
Page No. : 5/6
Characteristic Curves(Cont.)
MTDP4953BDYQ8
CYStek Product Specification
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
CYStech Electronics Corp.
Page No. : 6/6
SOP-8 Dimension
Right side View
Top View
A
Marking:
G
I
Device Name
4953BDYSS
Date Code
□□□□
C
B
H
J
D
Front View
Part A
E
K
Part A
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
M
O
F
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
0.2007
Min.
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
Min.
Max.
Min.
Max.
0.20
0.70
0.25
0.52
0.50
0.13
0.15
A
B
C
D
E
F
0.1909
0.1515
0.2283
0.0480
0.0145
0.1472
0.0570
0.1889
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
I
J
0.0019
0.0118
0.0074
0.0145
0.0118
0.0031
0.0000
0.0078
0.0275
0.0098
0.0204
0.0197
0.0051
0.0059
0.05
0.30
0.19
0.37
0.30
0.08
0.00
0.1555
0.2441
0.0519
0.0185
0.1527
0.0649
0.2007
K
L
M
N
O
G
H
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP4953BDYQ8
CYStek Product Specification
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