MTE015N15RF3-0-T7-X [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE015N15RF3-0-T7-X |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE015N15RF3
BVDSS
ID@VGS=10V, TC=25°C
150V
90A
RDS(ON)@VGS=10V, ID=30A
16mΩ (typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
Symbol
Outline
TO-263
MTE015N15RF3
G：Gate
G
D
S
D：Drain
S：Source
Ordering Information
Device
Package
TO-263
Shipping
MTE015N15RF3-0-T7-X
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
150
±30
90
52
260
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=125°C
Pulsed Drain Current
ID
A
(Note 1)
IDM
IAS
Avalanche Current @L=0.1mH
85
Avalanche Energy @ L=5mH, ID=20A, VDD=50V (Note 2)
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation (TC=25℃)
EAS
EAR
1000
37.5
375
mJ
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
187
2.4
PD
W
Total Power Dissipation (TA=100℃)
1.2
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Note : 1. Pulse width limited by maximum junction temperature
2. 100% tested by conditions of L=0.1mH, IAS=30A, VGS=10V, VDD=50V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
0.4
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
150
-
0.1
-
24
-
-
-
16
-
-
4.0
-
100
1
25
20
V
V/°C
V
S
nA
VGS=0V, ID=250μA
-
2.0
-
-
-
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
GFS
IGSS
±
±
VGS= 30V
VDS =120V, VGS =0V
VDS =100V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
IDSS
μA
-
-
Ω
m
*RDS(ON)
Dynamic
*Qg
-
-
-
-
-
-
-
68
-
-
-
-
-
-
-
nC
ID=85A, VDS=75V, VGS=10V
VDS=75V, ID=85A, VGS=10V,
*Qgs
23.5
19.5
41.8
235.8
128
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
ns
Ω
RG=2.5
140.8
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Ciss
Coss
Crss
Rg
-
-
-
-
3506
579
61
-
-
-
-
pF
VGS=0V, VDS=25V, f=1MHz
Ω
2.2
f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
90
260
1.2
-
A
0.86
72
216
V
ns
nC
IS=30A, VGS=0V
IF=30A, VGS=0V, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
200
180
160
140
120
100
80
10V,9V
8V
7V
6V
0.8
0.6
0.4
60
ID=250μA,
VGS=5.5V
40
VGS=0V
20
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=10V
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
10
0.1
1
10
100
0
5
10
15
20
25
30
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.8
2.4
2
180
160
140
120
100
80
VGS=10V, ID=30A
ID=30A
1.6
1.2
0.8
0.4
0
60
40
RDS(ON)@Tj=25°C : 16mΩ typ.
20
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTE015N15RF3
CYStek Product Specificati
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
1000
100
10
ID=1mA
0.8
0.6
0.4
0.2
C
oss
Crss
40
ID=250μA
1
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10
20
30
50
60
70
80
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=75V
8
6
4
2
0
VDS=15V
1
VDS=120V
0.1
0.01
Pulsed
Ta=25°C
ID=85A
0
7
14 21 28 35 42 49 56 63 70
Total Gate Charge---Qg(nC)
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
100
90
80
70
60
50
40
30
20
10
0
1000
100
10
10 s
μ
RDS(ON)
Limited
100μs
1ms
10ms
100ms
DC
TC=25°C, Tj=175°C,
JC
1
θ
VGS=10V,R =0.4°C/W
JC
θ
VGS=10V, R =0.4°C/W
single pulse
0.1
25
50
75
100 125 150 175 200
0.1
1
V
10
DS, Drain-Source Voltage(V)
100
1000
TC, Case Temperature(°C)
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
200
180
160
140
120
100
80
VDS=10V
TJ(MAX)=175°C
TC=25°C
θ
R
JC=0.4°C/W
60
40
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
JC
θ
1.RθJC(t)=r(t)*R
0.2
1
2.Duty Factor, D=t /t
2
JM
C
DM
3.T -T =P *Rθ (t)
JC
JC
θ
4.R =0.4 °C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE015N15RF3
CYStek Product Specification
Spec. No. : C838F3
Issued Date : 2017.07.11
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
TO-263 Dimension
Marking :
Device Name
Date Code
E015
N15R
□□□□
Style : Pin 1.Gate 2.Drain
3.Source
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
Date Code : (From left to right)
First Code : Year code, the last digit of Christinr year. For example, 2014→4, 2015→, 2016→6, …, etc.
Second Code : Month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
Third and fourth codes : production serial number, 01~99
Millimeters
Min.
Inches
Millimeters
Inches
DIM
DIM
Max.
4.70
0.25
2.79
0.90
0.86
1.36
1.32
0.47
0.43
1.32
Min.
Max.
0.185
0.010
0.110
0.035
0.034
0.054
0.052
0.019
0.017
0.052
Min.
10.06
7.80
Max.
10.26
8.20
Min.
0.396
0.307
Max.
0.404
0.323
A
4.40
0.00
2.59
0.77
0.76
1.23
1.22
0.34
0.33
1.22
9.05
6.60
0.173
0.000
0.102
0.030
0.030
0.048
0.048
0.013
0.013
0.048
E
E1
e
A1
A2
b
2.54 BSC
0.100 BSC
H
14.70
2.00
1.17
-
15.50
2.60
1.40
1.75
0.579
0.610
0.102
0.055
0.069
b1
b2
b3
c
L
0.079
0.046
-
L1
L2
L3
L4
θ
0.25 BSC
2.00 REF
0.010 BSC
0.079 BSC
c1
c2
D
0°
5°
1°
8°
9°
5°
0°
5°
1°
8°
9°
5°
9.25
-
0.356
0.260
0.364
-
Θ1
Θ2
D1
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE015N15RF3
CYStek Product Specification
相关型号：
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