MTE2D0N04H8 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE2D0N04H8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 1/ 10
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
40V
145A(silicon limit)
MTE2D0N04H8
84A(package limit)
23A
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
1.65mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
Outline
DFN5×6
MTE2D0N04H8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
MTE2D0N04H8-0-T6-G
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 2/ 10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
(Note 1)
VDS
VGS
40
±30
145
103
84
Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 5)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 5)
Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1)
ID
A
23
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 2)
(Note 2)
(Note 3)
(Note 3)
IDSM
18.4
350
44
IDM
IAS
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=44Amps, VDD=30V
EAS
EAR
968
(Note 4)
mJ
Repetitive Avalanche Energy
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
12.5
125
62.5
2.5
TC=25°C
TC=100°C
TA=25°C
TA=70°C
PD
Power Dissipation
W
PDSM
1.6
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Tj, Tstg -55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.2
50
Unit
°C/W
°
Note : 1.The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJAand the maximum allowed junction temperature of 150°C, and the maximum
temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
°
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C. 100% tested by conditions of VDD=30V,
ID=20A, L=1mH, VGS=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
.
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 3/ 10
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
40
-
2
-
-
-
-
4
-
V
V/°C
V
VGS=0V, ID=250μA
0.03
-
32
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
*GFS
S
nA
±
±
IGSS
-
-
-
-
-
-
-
100
1
5
VGS= 30V
VDS =40V, VGS =0V
VDS =32V, VGS =0V, Tj=55°C
VGS =10V, ID=20A
IDSS
μA
Ω
m
*RDS(ON)
1.65
2.2
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
-
-
-
-
-
-
-
-
-
-
-
112
35
35
-
-
-
-
-
-
-
-
-
-
-
nC
VDS=20V, ID=84A, VGS=10V
43.2
31.6
74.4
24.2
5957
828
405
1.0
Ω
ns
VDS=20V, ID=20A, VGS=10V, RG=2.7
pF
VGS=0V, VDS=20V, f=1MHz
f=1MHz
Coss
Crss
Rg
Ω
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
84
350
1.1
-
A
0.73
34
33
V
ns
nC
IS=5A, VGS=0V
VGS=0, IF=25A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 4/ 10
CYStech Electronics Corp.
Recommended Soldering Footprint
unit : mm
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 5/ 10
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
80
70
60
50
40
30
20
10
0
10V, 9V, 8V, 7V
VGS=6V
0.8
0.6
0.4
I =250 A,
μ
D
VGS=5.5V
VGS=0V
0
1
2
3
4
5
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
10
1
1.2
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=4.5V
VGS=10V
Tj=150°C
0.1
0.01
0.1
1
ID, Drain Current(A)
10
100
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
40
30
20
10
0
2.4
VGS=10V, ID=20A
2
1.6
1.2
0.8
0.4
0
ID=20A
RDS(ON)@Tj=25°C :1.65mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 6/ 10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
Ciss
ID=1mA
C
oss
0.8
0.6
0.4
0.2
ID=250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
8
VDS=20V
10
1
6
VDS=32V
4
VDS=10V
Pulsed
0.1
0.01
2
Ta=25°C
ID=84A
0
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Silicon Limit
Maximum Safe Operating Area
180
1000
RDS(ON)
Limited
160
140
120
100
80
100
10
1
100 s
μ
1ms
10ms
DC
Package Limit
60
TC=25°C, Tj=175°C,
JC
40
VGS=10V, R =1.2°C/W
θ
JC
VGS=10V, Rθ =1.2°C/W
20
Single Pulse
0
0.1
25
50
75
100 125 150 175 200
0.1
1
10
100
V
DS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 7/ 10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
80
70
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
VDS=10V
TJ(MAX)=175°C
TC=25°C
RθJC=1.2°C/W
0
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
VGS, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
JC
JC
1.Rθ (t)=r(t)*Rθ
1
2
2.Duty Factor, D=t /t
JM
C
DM
JC
3.T -T =P *Rθ (t)
0.1
JC
4.Rθ =1.2 °C/W
0.05
0.1
Single Pulse
0.02
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 8/ 10
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
Pin #1
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 9/ 10
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE2D0N04H8
CYStek Product Specification
Spec. No. : C072H8
Issued Date : 2016.03.02
Revised Date : 2016.03.04
Page No. : 10/ 10
CYStech Electronics Corp.
DFN5×6 Dimension
Marking:
E2D0
N04
Device Name
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
0.039
0.014
0.008
-
0.189
0.150
0.046
0.232
0.224
Millimeters
Inches
Min.
DIM
Min.
1.00
0.35
0.21
-
Max.
Max.
0.047
0.018
0.013
0.201
0.197
0.162
0.054
0.240
0.228
Min.
3.18
0.51
1.10
0.51
0.06
-
Max.
3.54
0.71
-
0.71
0.20
0.10
1.20
12°
Max.
0.139
0.028
-
A
b
1.20
0.45
0.34
5.10
5.00
4.11
1.37
6.10
5.80
E2
H
K
0.125
0.020
0.043
0.020
0.002
-
c
D
L
0.028
0.008
0.004
0.047
12°
D1
D2
e
E
E1
4.80
3.82
1.17
5.90
5.70
L1
L2
p
1.00
8°
0.039
8°
θ
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE2D0N04H8
CYStek Product Specification
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