MTN6N65BFP-0-UB-S [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTN6N65BFP-0-UB-S |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
BVDSS
650V
6A
MTN6N65BFP
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=3A
1.02Ω
Description
The MTN6N65BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Switching Mode Power Supply
• LCD Panel Power
• Adapter
• E-bike Charger
Ordering Information
Device
Package
Shipping
TO-220FP
(RoHS compliant package)
MTN6N65BFP-0-UB-S
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 2/10
Symbol
Outline
MTN6N65BFP
TO-220FP
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
650
±30
6*
3.8*
24*
6
V
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
Single Pulse Avalanche Current @L=7mH
Single Pulse Avalanche Energy
ID
A
(Note 1)
(Note 2)
(Note 2)
(Note 1)
IDM
IAS
EAS
EAR
126
5.2
mJ
Repetitive Avalanche Energy
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
TL
300
260
°C
TPKG
PD
W
W/°C
°C
52
0.42
Tj, Tstg
-55~+150
*Drain current limited by maximum junction temperature
.
Note : 1 Pulse width limited by maximum junction temperature.
℃
.
2 IAS=6A, VDD=50V, L=7mH, VG=10V, starting TJ=+25 . 100% tested by conditions of L=7mH, IAS=3A,
V
GS=10V, VDD=50V
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 3/10
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RƟJC
RƟJA
2.4
62.5
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
℃
BVDSS
∆BVDSS/∆Tj
VGS(th)
650
-
0.7
-
7.8
-
-
-
4.0
-
100
1
10
V
VGS=0V, ID=250μA, Tj=25
-
2.0
-
-
-
V/°C
V
S
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=3A
*GFS
IGSS
nA
±
±
VGS= 30V
-
-
VDS =650V, VGS =0V
IDSS
μA
-
VDS =520V, VGS =0V, Tj=125°C
Ω
*RDS(ON)
Dynamic
*Qg
-
1.02
1.3
VGS =10V, ID=3A
-
-
-
-
-
-
-
-
-
-
27.3
5
-
-
-
-
-
-
-
-
-
-
nC
ns
VDD=325V, ID=6A, VGS=10V
VDD=325V, ID=6A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
11.6
14.2
55.4
65.2
67.6
877
91
Ω
RG=25
pF
VGS=0V, VDS=25V, f=1MHz
IS=6A, VGS=0V
25
Source-Drain Diode
*VSD
*IS
*ISM
*trr
-
-
-
-
-
0.83
-
-
376
2.2
1.2
6
24
-
V
A
ns
μC
VGS=0V, IF=6A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 4/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
20
10V,9V,8V,7V
16
12
8
6V
.
5 5V
4
ID=250μA,
VGS=0V
VGS=5V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
DS, Drain-Source Voltage(V)
40
50
10
10
,
TA Ambient Temperature(°C)
V
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
20
15
10
5
1500
1200
900
600
300
0
Ta=25°C
VDS=30V
VGS=10V
VDS=10V
0
0
2
4
6
8
10
0.01
0.1
1
ID, Drain Current(A)
V
GS
, Gate-Source Voltage(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Forward Drain Current vs Source-Drain Voltage
100
2000
1800
1600
1400
1200
1000
800
VGS=0V
10
1
Ta=150°C
Ta=25°C
0.1
600
0.01
0.001
ID=3A
400
Ta=25°C
200
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
VGS, Gate-Source Voltage(V)
8
VSD, Source Drain Voltage(V)
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Static Drain-Source On-resistance vs Ambient Temperature
10000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID=3A,
VGS=10V
Ciss
1000
100
10
Coss
f=1MHz
5
Crss
20
RDS(ON)@Tj=25°C:1.02Ω typ.
0
10
15
25
30
1000
175
-75 -50 -25
0
25 50 75 100 125 150 175
,
TA Ambient Temperature(°C)
VDS, Drain-to-Source Voltage(V)
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
10
8
10
s
μ
VDS=130V
VDS=325V
RDS(ON)
Limited
s
μ
100
1ms
6
10ms
1
VDS=520V
100ms
DC
4
TC=25°C, Tj(max)=150°C
θ
0.1
0.01
2
VGS=10V, R JC=2.4°C/W
ID=6A
25
Single pulse
0
0
5
10
15
20
30
1
10
100
VDS, Drain-Source Voltage(V)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
8
6
4
2
0
1.4
1.2
1
ID=1mA
0.8
0.6
0.4
0.2
I =250μ
A
D
θ
VGS=10V, R JC=2.4°C/W
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
C
T , Case Temperature(°C)
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 6/10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
100
2000
1800
1600
1400
1200
1000
800
TJ(MAX)=150°C
TC=25°C
10
θ
=2.4°C/W
JC
R
1
VDS=15V
600
0.1
0.01
Ta=25°C
Pulsed
400
200
0
0.001
0.01
0.1
ID, Drain Current(A)
1
10
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JC
θ
θ
1.R JC(t)=r(t)*R
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
JC=2.4 C/W
θ
4.R
°
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 7/10
Test Circuit and Waveforms
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 8/10
Test Circuit and Waveforms(Cont.)
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN6N65BFP
CYStek Product Specification
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
CYStech Electronics Corp.
Page No. : 10/10
TO-220FP Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Millimeters
Inches
Millimeters
Inches
DIM
DIM
Min.
Max.
Min.
4.35
Max.
4.65
Min.
0.246
Max.
0.258
Min.
6.25
Max.
6.55
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
0.171
0.183
G
H
H1
H2
J
K
L
L1
L2
M
N
0.051 REF
1.300 REF
0.138 REF
0.055 REF
0.256 0.272
3.50 REF
1.40 REF
6.50 6.90
0.112
0.102
0.020
0.031
0.124
0.110
0.030
0.041
2.85
2.60
0.50
0.80
3.15
2.80
0.75
1.05
0.031 REF
0.020
0.80 REF
0.50 REF
0.047 REF
1.20 REF
1.102
0.043
0.036
1.118
0.051
0.043
28.00
1.10
0.92
28.40
1.30
1.08
0.020
0.396
0.583
0.030
0.404
0.598
0.500
10.06
14.80
0.750
10.26
15.20
0.067 REF
0.012 REF
1.70 REF
0.30 REF
0.100 *
0.106 REF
2.54*
2.70 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6N65BFP
CYStek Product Specification
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