MCR100-7 [DIGITRON]
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 500; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92;
| 型号： | MCR100-7 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 500; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 |
| 文件： | 总4页 (文件大小：1018K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR100 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
100
200
300
400
500
600
VDRM
VRRM
V
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
ITSM
0.8
A
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 25°C)
10
0.415
0.1
Circuit fusing consideration (t = 8.3ms)
I2t
PGM
PG(AV)
IGM
A2s
W
W
A
Forward peak gate power (pulse width ≤ 1.0µs, TA = 25°C)
Forward average gate power (t = 8.3ms, TA = 25°C)
0.10
≤ 1.0µs, T
Forward peak gate current (pulse width
Reverse peak gate voltage (pulse width
A = 25°C)
A = 25°C)
1.0
≤ 1.0µs, T
VGRM
TJ
5.0
V
Operating junction temperature range @ rated VRRM and VDRM
-40 to +110
-40 to +150
°C
°C
Storage temperature range
Tstg
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
RӨJC
Maximum
75
Unit
°C/W
°C/W
Thermal resistance, junction to case
Thermal resistance, junction to ambient
RӨJA
200
Lead solder temperature
TL
°C
(lead length < 1/16” from case, 10s max)
260
Rev. 20130109
MCR100 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current(2)
Ω)
(VAK = Rated VDRM or VRRM, RGK = 1k
IDRM,
IRRM
TC = 25°C
-
-
-
-
10
µA
TC = 110°C
100
ON CHARACTERISTICS
Peak forward on-state voltage*
VTM
V
(ITM = 1.0A peak, @ TA = 25°C)
-
-
-
1.7
Gate trigger current (continuous dc)(3)
IGT
µA
Ω, T
(VAK = 7V, RL = 100
C = 25°C)
40
200
Holding current (2)
(VAK = 7V, initiating current = 20mA)
IH
mA
mA
TC = 25°C
TC = -40°C
-
-
0.5
-
5.0
10
Latch current
(VAK = 7V, Ig = 200µA)
TC = 25°C
IL
-
-
0.6
-
10
15
TC = -40°C
Gate trigger voltage (continuous dc) (3)
VGT
V
Ω)
(VAK = 7V, RL = 100
TC = 25°C
TC = -40°C
-
-
0.62
-
0.8
1.2
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
dv/dt
di/dt
V/µs
A/µs
Ω, T
(VD = rated VDRM, exponential waveform, RGK = 1000
J = 110°C)
20
-
35
-
-
Critical rate of rise of on-state current
(IPK = 20A, PW = 10µsec, diG/dt = Igt = 20mA)
50
Ω included in measurement.
Note 2: RGK = 1000
Note 3: Does not include RGK in measurement.
≤ 1.0ms, duty cycle ≤ 1%.
* Pulse test: pulse width
Rev. 20130109
MCR100 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-92
Marking:
Pin out:
Body painted, alpha-numeric
See below
Rev. 20130109
MCR100 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130109
相关型号：
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