2DB1132Q-13 [DIODES]
PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
| 型号： | 2DB1132Q-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DB1132P/Q/R
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (2DD1664)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
TOR
LLEC
2,4
CO
3 E
2 C
1 B
•
•
C 4
T
1
ASE
B
•
•
•
3
EMITTER
EW
VI
OP
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Value
-40
-32
-5
Unit
V
V
V
A
Peak Pulse Current
-2
Continuous Collector Current
-1
A
IC
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Typ
Max
Unit
Conditions
-40
-32
-5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = -50μA, IE = 0
IC = -1mA, IB = 0
IE = -50μA, IC = 0
VCB = -20V, IE = 0
VEB = -4V, IC = 0
V
-0.5
⎯
⎯
μA
μA
Emitter Cut-Off Current
-0.5
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
-0.125
⎯
⎯
-0.5
180
270
390
V
VCE(SAT)
⎯
82
120
180
IC = -500mA, IB = -50mA
⎯
⎯
⎯
2DB1132P
2DB1132Q
2DB1132R
DC Current Gain
hFE
VCE = -3V, IC = -100mA
⎯
SMALL SIGNAL CHARACTERISTICS
VCE = -5V, IE = 50mA
f = 30MHz
VCB = -10V, IE = 0,
f = 1MHz
Transition Frequency
190
12
MHz
pF
fT
⎯
⎯
⎯
Output Capacitance
30
Cob
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31142 Rev. 4 - 2
1 of 4
www.diodes.com
2DB1132P/Q/R
© Diodes Incorporated
1.0
0.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.4
0.2
0
0.2
0
0
25
50
150
100
125
75
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
V
= -3V
CE
500
400
T
T
= 150°C
= 85°C
A
I
/I = 10
B
C
A
300
200
T
= 25°C
A
A
T
= 150°C
A
T
= -55°C
T
= 25°C
A
100
0
T
= 85°C
A
T
= -55°C
A
0.001
0.01
0.1
1
10
T
= -55°C
A
T
= -55°C
A
T
= 25°C
= 85°C
A
T
= 25°C
= 85°C
A
T
A
T
A
T = 150°C
A
V
= -3V
T
= 150°C
CE
A
I
/I = 10
B
C
DS31142 Rev. 4 - 2
2 of 4
www.diodes.com
2DB1132P/Q/R
© Diodes Incorporated
40
30
250
200
150
20
100
50
10
0
V
= -5V
CE
f = 30MHz
-IE, EMITTER CURRENT
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
Ordering Information (Note 5)
Device
Packaging
SOT89-3L
SOT89-3L
SOT89-3L
Shipping
2DB1132P-13
2DB1132Q-13
2DB1132R-13
2500/Tape & Reel
2500/Tape & Reel
2500/Tape & Reel
Notes:
5. For packaging details, please see below or go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
P13x = Product Type Marking Code:
Where
P13P = 2DB1132P
P13Q = 2DB1132Q
P13R = 2DB1132R
YWW
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
P13x
Package Outline Dimensions
D1
C
SOT89-3L
Dim Min Max Typ
A
B
1.40 1.60 1.50
0.45 0.55 0.50
0.37 0.47 0.42
0.35 0.43 0.38
4.40 4.60 4.50
1.50 1.70 1.60
2.40 2.60 2.50
E
H
B1
C
L
B
D
e
B1
D1
E
e
—
—
1.50
A
H
3.95 4.25 4.10
0.90 1.20 1.05
L
All Dimensions in mm
D
DS31142 Rev. 4 - 2
3 of 4
www.diodes.com
2DB1132P/Q/R
© Diodes Incorporated
Suggested Pad Layout
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31142 Rev. 4 - 2
4 of 4
www.diodes.com
2DB1132P/Q/R
© Diodes Incorporated
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