BSS84V_07 [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双P沟道增强型场效应晶体管
| 型号： | BSS84V_07 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
BSS84W
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84W
P-Channel POWER MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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WEITRON
BSS84W (新产品)
BSS84W采用SOT-323封装，内置有单极Pch -60V -0.21A MOSFET和ESD保护二极管，非常适用于高边负载开关、开关电路和继电器驱动器等应用。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
BSS84W-7
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84W-7-F
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84WAHZG (新产品)
BSS84WAHZG采用SOT-23封装，内置有单极Pch -60V -0.21A MOSFET和ESD保护二极管。非常适用于高边负载开关、开关电路和继电器驱动器等应用，是一款符合AEC-Q101标准的车载用MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
BSS84WQ-7-F
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84WT/R13
P-CHANNEL ENHANCEMENT MODE MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84WT/R7
P-CHANNEL ENHANCEMENT MODE MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84WT1
130 mAmps, 50 VoltsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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WILLAS
BSS84W_1
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84W_15
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84W_2
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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DIODES
BSS84XHZG
BSS84XHZG是具有较高安装可靠性的车载用超小型MOSFET，利用先进的Wettable Flank成型技术确保封装侧面电极部分的高度为125μm。采用底部电极结构的封装确保稳定的焊接品质，使部件安装后焊接状态的自动光学检查(AOI)更准确。有助于车载ECU和ADAS相机模块等车载部件的小型化。适合用于高边负载开关、开关电路、继电器驱动器。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
BSS84Z
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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UTC
BSS84ZDW
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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UTC
BSS84ZG-AE2-R
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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UTC
BSS84ZL-AE2-R
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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UTC
BSS84ZT
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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UTC
BSS84ZTG-AN3-R
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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UTC
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