DMG1023UVQ-13 [DIODES]

Small Signal Field-Effect Transistor,;


型号：	DMG1023UVQ-13
厂家：	DIODES INCORPORATED
描述：	Small Signal Field-Effect Transistor,
文件：	总6页 (文件大小：305K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMG1023UVQ

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Dual P-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)

I_D

BV_DSS

R_DS(ON)

T_A= +25°C

-1.03A

-0.7A

0.75Ω @ V_GS= -4.5V

1.05Ω @ V_GS= -2.5V

-20V

Mechanical Data

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.



Case: SOT563

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Terminals: Finish — Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (Approximate)



DC-DC Converters

Load Switch

Power Management Functions



SOT563

G₁

S₁

D₂

ESD PROTECTED

Top View

Bottom View

G₂

S₂

D₁

Top View

Ordering Information (Note 5)

Part Number

DMG1023UVQ-7

DMG1023UVQ-13

Case

SOT563

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

PA2 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: G = 2019)

M = Month (ex: 9 = September)

PA2 YM

Date Code Key

Year

2019

2020

2021

2022

2023

2024

2025

2026

2027

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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www.diodes.com

April 2019

DMG1023UVQ

Document number: DS41660 Rev. 4 - 2

DMG1023UVQ

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

Value

-20

Unit

DSS

GSS

Gate-Source Voltage

±6

Steady

Continuous Drain Current (Note 6) V_GS= -4.5V

State

T_A= +25°C

T_A= +70°C

-1.03

-0.68

I_D

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

-3

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

0.53

235

Unit

Total Power Dissipation (Note 6)

Steady State

P_D

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

°C/W

R_

-55 to +150

°C

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-20

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250μA

V_DS= -20V, V_GS= 0V

V_GS= ±4.5V, V_DS= 0V

-100

±2.0

μA

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

—

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

—

0.5

0.7

1.0

—

-1.0

0.75

1.05

1.5

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250μA

V_GS= -4.5V, I_D= -430mA

V_GS= -2.5V, I_D= -300mA

V_GS= -1.8V, I_D= -150mA

V_GS= -1.7V, I_D= -100mA

V_GS= -1.5V, I_D= -100mA

V_GS= 0V, I_S= -150mA

Static Drain-Source On-Resistance

—

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

-0.8

-1.2

—

C_iss

C_oss

C_rss

Q_g

V_DS= -16V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

6.4

622

100

132

5.1

8.1

28.4

8.1

V_GS= -4.5V, V_DS= -10V,

I_D= -250mA

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

t_D(ON)

t_R

Turn-On Delay Time

V_DD= -10V, V_GS= -4.5V,

R_L= 47Ω, R_G= 10Ω,

I_D= -200mA

Turn-On Rise Time

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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April 2019

DMG1023UVQ

Document number: DS41660 Rev. 4 - 2

DMG1023UVQ

1.5

1.2

= -8.0V

= -5V

= -4.5V

)

(

= -3.0V

= -2.5V

0.9

= -2.0V

0.6

0.3

I ^D

= 150°C

= -1.5V

= 85°C

= 125°C

= 25°C

= -1.2V

= -55°C

0.5

1.5

2.5

-V_DS, DRAIN-SOURCE VOLTAGE (V)

-V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristic

Fig. 1 Typical Output Characteristic

)

1.6

1.4



1.0

0.8

(

= -4.5V

1.2

1.0

0.8

0.6

0.4

= 150°C

= -1.8V

= 125°C

= 85°C

0.6

0.4

0.2

= -2.5V

= 25°C

= -55°C

= -4.5V

)

0.2

(

0.3

0.6

0.9

1.2

1.5

0.3

0.6

0.9

1.2

1.5

-I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I_D, DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.7

1.2

1.0

0.8

1.5

= -2.5V

= -500mA

1.3

1.1

0.9

= -4.5V

= -1.0A

0.6

0.4

= -4.5V

= -1.0A

0.7

0.5

0.2

-50 -25

75 100 125 150

-50 -25

T T

75 100 125 150

T_A, AMBIENT TEMPERATURE (

Fig. 5 On-Resistance Variation with Temperature

癈 )

T_A, AMBIENT TEMPERATURE (°C )

T_A

(

癈

°C

)

Fig. 6 O^An-Resistance Variation with Temperature

Fig. 6 On-Resistance Variation with Temperature

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April 2019

DMG1023UVQ

Document number: DS41660 Rev. 4 - 2

DMG1023UVQ

1.6

1.2

)

(

)

(

= -1mA

0.8

= 25°C

= -250µA

I ^S

0.4

)

(

V^G

0.2

0.4

0.6

0.8

1.0

1.2

-50 -25

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

75 100 125 150

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

100

1,000

100

f = 1MHz

iss

)

= 150°C

= 125°C

(

oss

rss

= 85°C

= 25°C

I ^D

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Total Capacitance

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

JA

= 260℃/^癈W

R_θJ^_A^J(^At) = r(t) * R_θJA

= 260 /W

_θJAJA

P(pk)

0.01

D = 0.01

- T = P * R (t)

JA

D = 0.005

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

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April 2019

DMG1023UVQ

Document number: DS41660 Rev. 4 - 2

DMG1023UVQ

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT563

Dim Min Max Typ

0.15 0.30 0.20

1.10 1.25 1.20

1.55 1.70 1.60

0.50

0.90 1.10 1.00

1.50 1.70 1.60

0.55 0.60 0.60

0.10 0.30 0.20

0.10 0.18 0.11

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT563

Value

Dimensions

(in mm)

2.2

1.2

0.375

0.5

1.7

0.5

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April 2019

DMG1023UVQ

Document number: DS41660 Rev. 4 - 2

DMG1023UVQ

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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April 2019

DMG1023UVQ

Document number: DS41660 Rev. 4 - 2

DMG1023UVQ-13 [DIODES]

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