DMG3420U [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMG3420U |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG3420U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
•
•
•
•
•
•
Drain
D
Gate
S
G
Source
Internal Schematic
TOP VIEW
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±12
VGSS
T
A = 25°C
Steady
State
5.47
3.43
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
A
A
ID
TA = 85°C
20
IDM
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.74
Unit
W
Power Dissipation (Note 3)
167
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
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January 2010
© Diodes Incorporated
DMG3420U
Document number: DS31867 Rev. 2 - 2
DMG3420U
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
1.0
μA
nA
-
±100
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
0.5
-
0.95
21
1.2
29
35
48
91
-
V
VGS(th)
VDS = VGS, ID = 250μA
V
V
V
V
GS = 10V, ID = 6A
GS = 4.5V, ID = 5A
GS = 2.5V, ID = 4A
GS = 1.8V, ID = 2A
25
mΩ
Static Drain-Source On-Resistance
RDS (ON)
34
65
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
-
-
9
S
V
|Yfs|
VSD
VDS = 5V, ID = 3.8A
VGS = 0V, IS = 1A
0.75
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
434.7
69.1
61.2
1.53
5.4
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = 4.5V, VDS = 10V,
Gate-Source Charge
Gate-Drain Charge
0.9
Qgs
Qgd
tD(on)
tr
ID = 6A
1.5
Turn-On Delay Time
6.5
Turn-On Rise Time
8.3
V
DD = 10V, VGS = 5V,
Turn-Off Delay Time
21.6
5.3
RL = 1.7Ω, RG = 6Ω
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
15
20
V
= 5V
DS
V
= 10V
GS
V
= 4.5V
GS
15
10
V
= 3.5V
GS
V
= 3.0V
GS
V
= 2.5V
GS
10
5
V
= 2.0V
GS
V
V
= 1.8V
= 1.5V
GS
GS
T
A
= 150°C
5
0
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
2
3
4
VGS, GATE SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
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January 2010
© Diodes Incorporated
DMG3420U
Document number: DS31867 Rev. 2 - 2
DMG3420U
0.08
0.06
0.08
0.06
V
= 4.5V
GS
T
= 150°C
A
0.04
0.04
0.02
0
V
= 2.5V
= 4.5V
T
= 125°C
= 85°C
GS
A
T
A
T
T
= 25°C
V
A
GS
0.02
0
= -55°C
A
0
5
10
15
20
0
5
10
15
20
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
1.3
0.06
0.05
0.04
0.03
V
= 2.5V
= 5A
GS
I
D
1.1
V
= 4.5V
GS
I
= 10A
D
V
= 4.5V
GS
0.02
0.01
0
0.9
0.7
0.5
I
= 10A
D
V
= 2.5V
GS
I
= 5A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
20
16
1.6
1.4
1.2
T
= 25°C
A
I
= 1mA
D
1.0
0.8
0.6
0.4
12
8
I
= 250µA
D
4
0
0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Fig. 8 Diode Forward Voltage vs. Current
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January 2010
© Diodes Incorporated
DMG3420U
Document number: DS31867 Rev. 2 - 2
DMG3420U
1,000
100
10
10,000
1,000
100
f = 1MHz
T
= 150°C
C
A
iss
T
= 125°C
A
C
oss
C
rss
T
= 85°C
A
10
1
T
= 25°C
A
0
5
10
15
20
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 162°C/W
θ
JA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Ordering Information (Note 7)
Part Number
Case
Packaging
DMG3420U-7
SOT-23
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
G31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
G31
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2010
© Diodes Incorporated
DMG3420U
Document number: DS31867 Rev. 2 - 2
DMG3420U
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
D
K1
L
M
-
F
L
0.45
0.085 0.18
0° 8°
0.61
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
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January 2010
© Diodes Incorporated
DMG3420U
Document number: DS31867 Rev. 2 - 2
DMG3420U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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January 2010
© Diodes Incorporated
DMG3420U
Document number: DS31867 Rev. 2 - 2
相关型号：
DMG4406LSS
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DIODES
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