DMMT3906W-7 [DIODES]
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED PNP小信号表面贴装晶体管
| 型号： | DMMT3906W-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMMT3906W
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
Intrinsically Matched PNP Pair (Note 1)
Small Surface Mount Package
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
1% Matched Tolerance Available (Note 2)
SOT-363
A
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
C2
E2
E1
B
C
B
C
B2
B1
C1
Mechanical Data
D
0.65 Nominal
G
H
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
·
Case: SOT-363, Molded Plastic
H
·
Case Material - UL Flammability Rating
Classification 94V-0
K
J
M
J
·
·
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
K
0.90
0.25
0.10
L
D
F
L
M
·
·
·
·
Terminal Connections: See Diagram
Marking (See Below): K4B
Weight: 0.015 grams (approx.)
a
8°
All Dimensions in mm
Ordering & Date Code Information: See Below
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
DMMT3906W
Unit
V
Collector-Base Voltage
-40
-40
Collector-Emitter Voltage
V
Emitter-Base Voltage
-5.0
V
Collector Current - Continuous
Power Dissipation (Note 3)
-200
mA
mW
°C/W
°C
Pd
200
RqJA
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
(Note 4)
Ordering Information
Device
Packaging
Shipping
DMMT3906W-7
SOT-363
3000/Tape & Reel
Notes:
1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4B
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
Code
N
P
R
S
T
U
V
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30312 Rev. 3 - 2
1 of 3
DMMT3906W
www.diodes.com
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IC = -10mA, IE = 0
-40
-40
-5.0
¾
¾
¾
V
V
IC = -1.0mA, IB = 0
IE = -10mA, IC = 0
¾
V
VCE = -30V, VEB(OFF) = -3.0V
VCE = -30V, VEB(OFF) = -3.0V
-50
-50
nA
nA
IBL
Base Cutoff Current
¾
ON CHARACTERISTICS (Note 5)
I
C = -100µA, VCE = -1.0V
60
80
¾
¾
300
¾
IC = -1.0mA, VCE = -1.0V
IC
IC
=
=
-10mA, VCE = -1.0V
-50mA, VCE = -1.0V
hFE
DC Current Gain (Note 6)
100
60
¾
IC = -100mA, VCE = -1.0V
30
¾
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
-0.25
-0.40
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
¾
V
V
IC = -10mA, IB = -1.0mA
-0.65
¾
-0.85
-0.95
I
C = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
V
CB = -5.0V, f = 1.0MHz, IE = 0
Cobo
Cibo
hie
¾
¾
4.5
10
pF
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Capacitance
Input Impedance
2.0
0.1
100
3.0
12
kW
x 10-4
hre
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
10
V
CE = 10V, IC = 1.0mA,
f = 1.0kHz
hfe
400
60
¾
hoe
mS
VCE = -20V, IC = -10mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
Noise Figure
250
¾
MHz
dB
VCE = -5.0V, IC = -100mA,
NF
¾
4.0
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
tr
¾
¾
¾
¾
35
35
ns
ns
ns
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
ts
tf
Storage Time
225
75
V
CC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
Notes:
5. Short duration test pulse used to minimize self-heating effect.
6. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector-Emitter Saturation Voltage, VCE (sat), and
Base-Emitter Saturation Voltage, VBE(sat) are matched with typical matched tolerances of 1% and maximum of 2%.
DS30312 Rev. 3 - 2
2 of 3
DMMT3906W
www.diodes.com
100
200
150
f = 1MHz
100
10
Cibo
50
Cobo
1
0
1
200
0
175
25
50
150
0.1
100
75
100 125
10
VCB, COLLECTOR-BASE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
10
IC
IB
= 10
TA = 125°C
1
100
TA = +25°C
TA = -25°C
0.1
10
VCE = 1.0V
0.01
1
10
IC, COLLECTOR CURRENT (mA)
1
100
1000
1
1000
10
0.1
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
IC
IB
= 10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30312 Rev. 3 - 2
3 of 3
DMMT3906W
www.diodes.com
相关型号：
DMMT3906WQ-7-F
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,
DIODES
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