DMN2990UFZ-7B [DIODES]
Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X2-DFN0606-3, 3 PIN;
| 型号： | DMN2990UFZ-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X2-DFN0606-3, 3 PIN 开关 晶体管 |
| 文件： | 总7页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2990UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Low Package Profile, 0.42mm Maximum Package Height
0.62mm x 0.62mm Package Footprint
I
D max
V(BR)DSS
RDS(ON) max
TA = +25°C
250mA
Low On-Resistance
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
Very Low Gate Threshold Voltage, 1.0V Max
ESD Protected Gate
230mA
20V
180mA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
150mA
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe
Applications
•
•
•
•
•
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
•
X2-DFN0606-3
ESD PROTECTED
Top View
Package Pin Configuration
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2990UFZ-7B
X2-DFN0606-3
10K/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN0606-3
6N = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
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January 2015
© Diodes Incorporated
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
DMN2990UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±8
VGSS
T
A = +25°C
Steady
State
250
170
mA
mA
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (Note 6)
ID
TA = +85°C
800
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
mW
Total Power Dissipation (Note 5)
Steady state
Steady state
320
402
PD
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
°C/W
RθJA
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
20
—
—
—
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±5V, VDS = 0V
100
±100
nA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
0.60
0.75
0.90
1.2
1.0
0.99
1.2
1.8
2.4
—
V
VGS(th)
VDS = VGS, ID = 250μA
V
V
GS = 4.5V, ID = 100mA
GS = 2.5V, ID = 50mA
—
—
Static Drain-Source On-Resistance
Ω
RDS(ON)
VGS = 1.8V, ID = 20mA
GS = 1.5V, ID = 10mA
—
V
—
2.0
VGS = 1.2V, ID = 1mA
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
180
—
mS
V
|Yfs|
VSD
0.6
1.0
—
—
—
—
—
—
—
—
—
—
28.2
4.0
55.2
8.0
5.6
1.0
0.14
0.14
10
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
V
DS = 16V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
2.8
0.5
0.07
0.07
3.5
2.1
22
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
10
Turn-On Rise Time
35
Turn-Off Delay Time
tD(off)
tf
15
Turn-Off Fall Time
7.7
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
DMN2990UFZ
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 5.0V
DS
V
= 4.5V
GS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.5V
GS
T
= 150°C
A
T
A
= 125°C
V
= 1.2V
GS
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
V
= 1.0V
GS
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0
5
4
3
2
1
0
I
= 100mA
D
V
= 1.8V
V
GS
I
= 50mA
D
= 2.5V
= 4.5V
GS
V
GS
I
= 20mA
D
0
1
2
3
4
5
6
7
8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ID, DRAIN-SOURCE CURRENT (A)
1
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
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DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
DMN2990UFZ
2.5
2
1.00
0.80
0.60
0.40
0.20
0.00
V
= 4.5V
GS
T
= 150°C
= 125°C
A
T
A
V
= 4.5V
GS
I
= 300mA
T
= 85°C
= 25°C
D
A
A
1.5
1
T
V
= 2.5V
GS
I
= 150mA
D
T
= -55°C
A
0.5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN CURRENT (A)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
1.5
1.2
0.9
0.6
0.3
0
1
0.9
0.8
0.7
0.6
0.5
0.4
V
= 4.5V
GS
I
= 1mA
I
= 300mA
D
D
I
= 250µA
D
V
= 2.5V
GS
I
= 150mA
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
°C)
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
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© Diodes Incorporated
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
DMN2990UFZ
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
10
1
C
iss
T
A
= 150°C
A
T
= 125°C
T
= 85°C
A
T
= 25°C
A
C
oss
T
= -55°C
A
C
rss
f = 1MHz
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
8
6
4
2
0
V
I
= 10V
DS
= 250mA
D
0
0.2
0.4
0.6
0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
DMN2990UFZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A1
Seating Plane
X2-DFN0606-3
Dim
A
A1
b
Min
0.36
0
0.10
0.57
Max
0.40
0.05
0.20
0.67
Typ
0.39
0.02
0.15
0.62
D
D2
D3
e/ 2
D
D2
D3
E
E2
e
k
L
L2
0.155 BSC
0.185 BSC
0.67
0.57
0.40
0.62
0.50
E2
e
E
0.60
0.35 BSC
0.16 REF
0.21
0.09
0.11
0.15
0.21
0.31
b
2x
k
All Dimensions in mm
L2
L
2x
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN0606-3
X
Dimensions
Value (in mm)
C
X
X1
X2
Y
0.350
0.280
0.350
0.760
0.200
0.600
Y
C
Y1
Y1
X1
X2
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DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
DMN2990UFZ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
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