DMN3027LFG-13 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN3027LFG-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3027LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
Low RDS(ON) – ensures on state losses are minimized
ID
BVDSS
RDS(ON) max
TA = +25°C
Small form factor thermally efficient package enables higher
density end products
8.0A
6.5A
18.6mΩ @ VGS = 10V
26.5mΩ @ VGS = 4.5V
30V
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) Rated
100% Rg Tested
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Mechanical Data
Backlighting
Case: POWERDI®3333-8
DC-DC Converters
Power Management Functions
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI®3333-8
D
Pin 1
S
S
S
G
G
D
D
S
D
D
Equivalent Circuit
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMN3027LFG-7
DMN3027LFG-13
Case
Packaging
2,000 / Tape & Reel
3,000 / Tape & Reel
POWERDI®3333-8
POWERDI®3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N37 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 for 2015)
WW = Week Code (01 – 53)
N37
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
DMN3027LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±25
V
VGSS
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
5.3
4.2
A
A
A
A
A
ID
ID
ID
ID
ID
Steady
Continuous Drain Current (Note 6) VGS = 10V
State
8.0
6.3
9.5
7.7
t10s
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
6.5
4.9
7.8
6.2
t10s
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
70
18
16
A
A
IDM
IAR
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
mJ
EAR
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
PD
Max
1.0
Unit
W
130.6
2.07
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
RθJA
PD
62.5
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation (Note 6) t10s
RθJA
PD
3.0
43.8
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t10s
Operating and Storage Temperature Range
RθJA
TJ, TSTG
-55 to +150
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. I and E rating are based on low frequency and duty cycles to keep T = +25°C.
AR AR
J
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
100
±100
nA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
-
IGSS
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
0.9
1.2
13.5
22
1.8
18.6
26.5
1.0
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VGS = 0V, IS = 1A
-
-
-
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
0.7
-
-
-
-
-
-
-
-
-
-
-
-
580
110
70
-
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
-
pF
Reverse Transfer Capacitance
Gate Resistance
-
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
3.0
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 10A
-
-
-
-
-
-
-
-
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Qg
Qg
nC
VGS = 10V, VDS = 15V,
ID = 10A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
ns
ns
ns
ns
Turn-On Rise Time
VGS = 10V, VDS = 15V,
RL = 15Ω, RG = 6Ω
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
DMN3027LFG
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = 10.0V
VDS = 5.0V
VGS = 4.0V
VGS = 4.5V
VGS = 3.5V
TA = 125℃
TA = 150℃
TA = 85℃
VGS = 3.0V
VGS = 2.5V
TA = 25℃
TA = -55℃
0
0.0
0
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.032
0.028
0.024
0.02
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = 4.5V
TA = 150℃
TA = 125℃
VGS = 4.5V
0.016
0.012
0.008
0.004
0
TA = 85℃
TA = 25℃
TA = -55℃
VGS = 10V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.6
1.4
1.2
1
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 5A
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 10A
0.8
0.6
-50
-25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
50
75
100 125 150
-50 -25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Temperature
50
75
100 125 150
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
DMN3027LFG
2
1.5
1
30
25
20
15
10
5
ID = 1mA
TA = 25oC
ID = 250μA
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. Gate Threshold Variation vs. Temperature
0
25
50
75
100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
10000
1000
100
10
1000
f=1MHz
Ciss
TA = 150oC
Coss
100
TA = 125oC
TA = 85oC
Crss
TA = 25oC
10
1
0
4
8
12
16
20
0
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Total Capacitance
VDS, Drain-SOURCE VOLTAGE (V)
Figure 9. Typical Leakage Current vs. Drain-Source
Voltage
10
400
350
Single Pulse
R
R
T
= 60C/W
JA
8
6
4
2
0
= r * R
JA(t)
(t)
JA
300
250
200
150
100
50
- T = P * R
J
A
JA(t)
VDS = 15V, ID = 10A
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
0
2
4
6
8
10
Qg, Gate Charge (nC)
Figure 11. Gate Charge
12
14
16
t1, PULSE DURATION TIME (sec)
Figure 12. Single Pulse Maximum Power Dissipation
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
DMN3027LFG
100
10
100
10
PW =10µs
RDS(ON) Limited
RDS(ON) Limited
PW =100µs
PW =100µs
PW =1ms
PW =1ms
1
1
PW =10ms
PW =100ms
PW =1s
PW =10ms
PW =100ms
PW =1s
0.1
0.01
0.1
0.01
TJ(Max) = 150℃ TA = 60℃
Single Pulse
DUT on 1*MRP Board
VGS = 4.5V
TJ(Max) = 150℃ TA = 25℃
Single Pulse
DUT on 1*MRP Board
VGS = 10V
PW =10s
DC
PW =10s
DC
0.1
1
10
100
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14. SOA, Safe Operation Area
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
0.01
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 60℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 15. Transient Thermal Resistance
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
DMN3027LFG
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI®3333-8
A3
A1
A
POWERDI®3333-8
Dim Min Max Typ
0.75 0.85 0.80
A1 0.00 0.05 0.02
Seating Plane
A
D
A3
b
0.203
0.27 0.37 0.32
0.20
3.25 3.35 3.30
L( 4x)
D2
1
b2
D
D2 2.22 2.32 2.27
3.25 3.35 3.30
E2 1.56 1.66 1.61
0.65
e1 0.79 0.89 0.84
Pin #1 ID
E
e
b2( 4x)
L1( 3x)
E
e1
E2
L
L1
z
0.35 0.45 0.40
0.39
0.515
All Dimensions in mm
8
z( 4x)
b
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI®3333-8
X3
X2
8
Dimensions Value (in mm)
C
X
X1
X2
X3
Y
Y1
Y2
Y3
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
X1
Y1
Y2
Y3
Y
X
1
C
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
DMN3027LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
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October 2015
© Diodes Incorporated
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
相关型号：
DMN3029LFG-13
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
DMN3029LFG-7
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
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