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DMN601TK_09 [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
DMN601TK_09
型号： DMN601TK_09
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总4页 (文件大小：131K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DMN601TK  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
Case: SOT-523  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.002 grams (approximate)  
•
•
•
•
•
•
•
•
Low On-Resistance: RDS(ON)  
Low Gate Threshold Voltage  
Low Input Capacitance  
•
•
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected Up To 2kV  
"Green" Device (Note 4)  
•
•
•
•
SOT-523  
Drain  
D
Gate  
G
S
Gate  
Protection  
Diode  
Source  
TOP VIEW  
TOP VIEW  
ESD Protected up to 2kV  
EQUIVALENT CIRCUIT  
Pin Out Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
60  
Units  
V
V
VDSS  
VGSS  
Gate-Source Voltage  
±20  
Continuous  
Pulsed (Note 3)  
300  
800  
Drain Current (Note 1)  
mA  
ID  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Value  
150  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
833  
Rθ  
JA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol Min  
Typ Max Unit  
Test Condition  
VGS = 0V, ID = 10μA  
60  
⎯
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
1.0  
±10  
μA VDS = 60V, VGS = 0V  
μA VGS = ±20V, VDS = 0V  
IGSS  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
1.0  
⎯
1.6  
2.5  
V
Ω
VGS(th)  
RDS (ON)  
|Yfs|  
VDS = 10V, ID = 1mA  
VGS = 10V, ID = 0.5A  
VGS = 5V, ID = 0.05A  
VDS =10V, ID = 0.2A  
⎯
⎯
⎯
2.0  
3.0  
Static Drain-Source On-Resistance  
Forward Transfer Admittance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
80  
ms  
⎯
50  
25  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 25V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
5.0  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%  
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
March 2009  
© Diodes Incorporated  
DMN601TK  
Document number: DS30654 Rev. 5 - 2  
DMN601TK  
V
= 10V  
GS  
8V  
6V  
5V  
4V  
3V  
10V  
8V  
6V  
1.0  
0.8  
5V  
4V  
0.6  
0.4  
0.2  
0
3V  
5
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
2
10  
VDS = 10V  
ID = 1mA  
Pulsed  
1.5  
1
1
0.5  
0
0.1  
-25  
75 100  
0
25  
50  
125 150  
-50  
Tch, CHANNEL TEMPERATURE (°C)  
ID, DRAIN CURRENT (A)  
Fig. 3 Gate Threshold Voltage  
vs. Channel Temperature  
Fig. 4 Static Drain-Source On-Resistance  
vs. Drain Current  
10  
0
1
VGS, GATE SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Fig. 6 Static Drain-Source On-Resistance  
vs. Gate-Source Voltage  
Fig. 5 Static Drain-Source On-Resistance  
vs. Drain Current  
2 of 4  
www.diodes.com  
March 2009  
© Diodes Incorporated  
DMN601TK  
Document number: DS30654 Rev. 5 - 2  
DMN601TK  
V
= 0V  
GS  
V
= 10V  
GS  
Pulsed  
I
= 300mA  
D
Pulsed  
T
= 125  
°
C
A
T
A
= 150  
°
C
I
= 150mA  
D
T
T
= 85°  
C
A
= 25°C  
A
T
T
= 0°C  
A
= -25  
°
C
A
T
= -55°C  
A
0
TCH, CHANNEL TEMPERATURE (°C)  
Fig. 7 Static Drain-Source On-State Resistance  
vs. Channel Temperature  
VGS = 10V  
Pulsed  
VGS = 10V  
TA= 25°C  
Pulsed  
TA = 25°C  
TA = 150°C  
TA = -55°C  
TA = 85°C  
VGS = 0V  
1
1
ID, DRAIN CURRENT (A)  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
Ordering Information (Note 6)  
Part Number  
Case  
Packaging  
DMN601TK-7  
SOT-523  
3000/Tape & Reel  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K7K = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: S = 2005)  
K7K  
YM  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
3 of 4  
www.diodes.com  
March 2009  
© Diodes Incorporated  
DMN601TK  
Document number: DS30654 Rev. 5 - 2  
DMN601TK  
Package Outline Dimensions  
A
SOT-523  
Dim  
A
B
C
D
G
H
J
K
L
Min  
Max  
0.30  
0.85  
1.75  
⎯
1.10  
1.70  
0.10  
0.80  
0.30  
0.20  
0.65  
8°  
Typ  
0.22  
0.80  
1.60  
0.50  
1.00  
1.60  
0.05  
0.75  
0.22  
0.12  
0.50  
⎯
0.15  
0.75  
1.45  
⎯
0.90  
1.50  
0.00  
0.60  
0.10  
0.10  
0.45  
0°  
C
B
G
H
K
M
N
M
N
α
J
L
D
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
1.8  
0.4  
0.51  
1.3  
Z
C
0.7  
X
E
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
4 of 4  
www.diodes.com  
March 2009  
© Diodes Incorporated  
DMN601TK  
Document number: DS30654 Rev. 5 - 2  

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