DMN63D1LW-7 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN63D1LW-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN63D1LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max
TA = +25°C
380mA
Low On-Resistance
V(BR)DSS
RDS(ON) max
Low Input Capacitance
2Ω @ VGS = 10V
3Ω @ VGS = 5V
Fast Switching Speed
60V
310mA
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Motor Control
Power Management Functions
Backlighting
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)
D
SOT323
D
G
S
G
Gate Protection
Diode
S
ESD Protected Gate
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN63D1LW-7
DMN63D1LW-13
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D36 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
D36
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
B
C
D
E
F
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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September 2015
© Diodes Incorporated
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
DMN63D1LW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
380
300
mA
mA
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
430
340
t<5s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
0.5
1.2
A
A
IS
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
310
Unit
Total Power Dissipation (Note 5)
mW
PD
Steady State
411
Thermal Resistance, Junction to Ambient (Note 5)
t<5s
°C/W
mW
°C/W
°C
RθJA
371
Total Power Dissipation (Note 6)
410
PD
Steady State
311
Thermal Resistance, Junction to Ambient (Note 6)
t<5s
RθJA
257
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min Typ Max Unit
Test Condition
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
—
1.0
±10
V
BVDSS
IDSS
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
—
µA
µA
—
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
1.6
2.5
V
VGS(TH)
RDS(ON)
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS = 10V, ID = 0.2A
VGS = 0V, IS = 115mA
—
—
2.0
3.0
Static Drain-Source On-Resistance
—
Ω
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
80
—
mS
V
|Yfs|
VSD
—
0.75
1.1
—
—
—
—
—
—
—
—
—
—
—
30
4.2
2.9
133
304
203
84
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
f = 1MHz, VGS = 0V, VDS = 0V
Total Gate Charge
pC
pC
pC
ns
ns
ns
ns
Qg
VGS = 4.5V, VDS = 10V,
ID = 250mA
—
—
—
—
—
—
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
3.9
3.4
15.7
9.9
Turn-On Rise Time
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
DMN63D1LW
2.5
2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10.0V, ID = 300mA
VGS = 10.0V
VGS = 8.0V
VGS = 6.0V
VGS = 5.0V
VGS = 4.0V
1.5
1
VGS = 10.0V, ID = 150mA
VGS = 3.0V
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (℃)
Figure 2. On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
1.6
1.2
0.8
0.4
0
2
1.6
1.2
0.8
0.4
0
ID = 1mA
ID = 250µA
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 4. Gate Threshold Variation with
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 3. Gate Threshold Variation with
Temperature
5
1
VDS = 10.0V
TA = 150oC
VGS = 5.0V
4
3
2
1
0
0.1
TA = 150oC
TA = 85oC
TA = 125oC
TA = 125oC
TA = 85oC
0.01
0.001
TA = 25oC
TA = -55oC
TA = -55oC
TA = 25oC
0.1
0.001
0.01
1
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
Figure 5. Typical Transfer Characteristics
3
3.5
4
4.5
5
ID, DRAIN-SOURCE CURRENT (A)
Figure 6. Static Drain-Source On-Resistance vs.
Drain Current
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© Diodes Incorporated
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
DMN63D1LW
2
1.8
1.6
1.4
1.2
1
5
4
3
2
1
0
TJ = 25℃
VGS = 10.0V
TA = 150oC
TA = 125oC
TA = 85oC
ID = 300mA
ID = 150mA
TA = -55oC
0.01
TA = 25oC
0.1
2
3
4
5
6
7
8
9
10
0.001
1
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 7. Static Drain-Source On-Resistance vs.
Drain Current
Figure 8. Static Drain-Source On-Resistance vs.
Gate-Source Voltage
50
45
40
35
30
25
20
15
10
5
1
VGS = 0V
f=1MHz
TJ = 150oC
TJ = 125oC
Ciss
0.1
TJ = 85oC
TJ = 25oC
0.01
0.001
Coss
Crss
TJ = -55oC
0
0
5
10
15
20
25
30
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Reverse Drain Current
Figure 10. Typical Junction Capacitance
10
1
RDS(ON) LIMITED
PW=100µs
PW=1ms
0.1
PW=10ms
PW=100ms
PW=1s
PW=10s
TJ(Max)=150℃
TA=25℃
Single Pulse
0.01
0.001
DC
DUT on 1*MRP board
VGS=10V
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
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© Diodes Incorporated
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
DMN63D1LW
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=408°C/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
A2
SOT323
Dim Min Max
A1 0.00 0.10
A2 0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
c
a
A1
e
L
b
c
D
E
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
b
E1 1.15 1.35
e
0.650 BSC
e1 1.20 1.40
1.30
F
L
a
0.375 0.475 0.425
0.25 0.40
8°
0.30
E
E1
All Dimensions in mm
F
e1
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September 2015
© Diodes Incorporated
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
DMN63D1LW
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Y
Value
(in mm)
0.650
Dimensions
C
G
Y1
G
1.300
X
0.470
Y
0.600
Y1
2.500
C
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
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