DMP1018UCB9_15 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP1018UCB9_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP1018UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
LD-MOS technology with the lowest Figure of Merit:
DS(on) = 12mΩ to Minimize On-State Losses
VDSS
RDS(on)
Qg
Qgd
ID
R
-12V
12mΩ
4.9nC
1.1nC
-7.6A
Qg = 4.9nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Typ. @ VGS = -4.5V, TA = +25°C
Height = 0.62mm for Low Profile
Description
ESD = 3kV HBM Protection of Gate
This 1st generation Lateral MOSFET (LD-MOS) is engineered to
minimize on-state losses and switch ultra-fast, making it ideal for high
efficiency power transfer. Using Chip-Scale Package (CSP) to
increase power density by combining low thermal impedance with
minimal RDS(on) per footprint area.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1515-9
Applications
Terminal Connections: See Diagram Below
DC-DC Converters
Battery Management
Load Switch
G
S
D
S
S
S
S
D
ESD PROTECTED TO 3kV
D
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 3)
Part Number
Case
Packaging
DMP1018UCB9-7
U-WLB1515-9
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
EW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
EW
YM
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2014
© Diodes Incorporated
DMP1018UCB9
Document number: DS36149 Rev. 3 - 2
DMP1018UCB9
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
Units
V
V
Gate-Source Voltage
-6
VGSS
T
A = +25°C
Steady
State
-7.6
-6.0
A
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -4.5V
ID
TA = +70°C
TA = +25°C
Steady
State
-5.5
-4.3
A
A
ID
TA = +70°C
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
-60
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
Value
1.0
1.8
Units
W
Total Power Dissipation (Note 6)
W
PD
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
126.8
69
°C/W
°C/W
°C
RθJA
RθJA
J, TSTG
-55 to +150
T
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
-1
-12
—
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -9.6V, VGS = 0V
VGS = -6.0V, VDS = 0V
μA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
—
-100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
—
-0.8
12
-1.3
18
22
—
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2A
Static Drain-Source On-Resistance
RDS (ON)
m
15
V
GS = -2.5V, ID = -2A
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
5.5
S
V
|Yfs|
VSD
Qrr
trr
VDS = -6V, ID = -2A
VGS = 0V, IS = -2A
-0.7
30.2
71.4
-1
—
nC
ns
Vdd = -5V, IF = -2A,
di/dt = 200A/μs
—
—
—
—
—
—
—
—
—
—
—
—
457
272
120
21.23
4.9
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
RG
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -6V,
nC
nC
nC
ns
ns
ns
ns
Qg
0.6
Qgs
Qgd
tD(on)
tr
I
D = -2A
1.1
Gate-Drain Charge
4.45
12
Turn-On Delay Time
Turn-On Rise Time
VDD = -6V, VGS = -4.5V,
IDS = -2A, RG = 2Ω,
100
93
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz (0.071-mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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November 2014
© Diodes Incorporated
DMP1018UCB9
Document number: DS36149 Rev. 3 - 2
DMP1018UCB9
10
8
20
15
V
= -3.0V
GS
V
= -2.5V
GS
V
= -5.0V
V
= -2.0V
DS
GS
V
= -1.8V
GS
6
4
10
V
V
= -1.5V
= -1.2V
T
= 150C
GS
A
T
= 125C
5
0
A
2
0
T
A
= 85C
A
T
= 25C
T
= -55C
A
GS
0
0.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.030
0.025
0.020
0.015
V
= -4.5V
GS
T
T
= 150
C
A
= 125
C
A
T
= 85C
A
0.020
0.015
0.010
V
V
= -2.5V
= -4.5V
GS
GS
T
= 25C
A
0.010
T
= -55C
A
V
= -6.0V
GS
0.005
0
0.005
0
0
2
4
6
8
10
1
2
3
4
5
6
7
8
9
10
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.030
0.025
1.7
1.5
V
I
= -4.5V
GS
= -5A
D
V
I
= -2.5V
GS
0.020
0.015
0.010
1.3
1.1
0.9
= -1A
D
V
I
= -2.5V
GS
= -1A
D
V
I
= -4.5V
GS
= -5A
D
0.005
0
0.7
0.5
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
C)
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November 2014
© Diodes Incorporated
DMP1018UCB9
Document number: DS36149 Rev. 3 - 2
DMP1018UCB9
10
8
1.4
1.2
1.0
0.8
0.6
0.4
T = 25C
A
6
4
-I = 1mA
D
-I = 250µA
D
2
0
0.2
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
TA, AMBIENT TEMPERATURE (°C)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
Figure 8 Diode Forward Voltage vs. Current
10,000
100
10
f = 1MHz
1,000
T
= 150°C
A
C
iss
1
T
= 125°C
A
C
oss
100
10
C
T
= 85°C
A
rss
T
= 25°C
A
0.1
T
= -55°C
A
0.01
0
2
4
6
8
10
12
1
2
3
4
5
6
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Figure 10 Typical Gate-Source Leakage Current vs. Voltage
6
5
100
10
V
I
= -6V
DS
4
= -2A
D
1
3
2
1
0.1
0.01
0
0
1
2
3
4
5
6
7
8
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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November 2014
© Diodes Incorporated
DMP1018UCB9
Document number: DS36149 Rev. 3 - 2
DMP1018UCB9
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
(t) = r(t) * R
JA
JA
R
= 70°C/W
JA
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
6X-Ø b
PIN ID
U-WLB1515-9
Dim Min
Max
0.62
0.36
Typ
-
0.36
e
A
-
-
A2
E
A3 0.020 0.030 0.025
e
b
D
E
e
0.27
1.47
1.47
-
0.37
1.51
1.51
-
0.32
1.49
1.49
0.50
e
e
All Dimensions in mm
A2
A3
A
SEATING PLANE
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
D
Value
(in mm)
Dimensions
C1
C
C1
C2
D
0.50
C
1.00
1.00
0.25
C
C2
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November 2014
© Diodes Incorporated
DMP1018UCB9
Document number: DS36149 Rev. 3 - 2
DMP1018UCB9
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMP1018UCB9
Document number: DS36149 Rev. 3 - 2
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