DMP2035UFDF-13 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMP2035UFDF-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2035UFDF
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
ID Max
V(BR)DSS
RDS(ON) Max
TA = +25°C
Low Gate Threshold Voltage
29mΩ @ VGS = -4.5V
39mΩ @ VGS = -2.5V
-6.9A
-5.9A
Low On-Resistance
-20V
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: U-DFN2020-6 (Type F)
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Battery Management Application
Power Management Functions
DC-DC Converters
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6 (Type F)
G
ESD PROTECTED
Pin1
Gate Protection
S
Pin Out
Bottom View
Diode
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2035UFDF-7
DMP2035UFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
P8
M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
Code
D
E
F
G
H
I
J
K
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
DMP2035UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
VGSS
Steady
State
TA = +25°C
-6.9
-5.5
A
A
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = -4.5V
-8.1
-6.5
t<10s
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
-40
-2.5
-21
23
A
A
IDM
IS
IAS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.66
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
RθJA
PD
0.42
180
135
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
2.03
TA = +25°C
TA = +70°C
Steady State
t<10s
1.31
63
43
17.5
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
—
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.4
—
—
20
-1.0
29
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -6.4A
VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = -1.5V, ID = -1.5A
VGS = 0V, IS = -1.0A
24
39
Static Drain-Source On-Resistance
31
60
40
120
-1.2
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
1,808
155
117
32
—
—
—
—
—
—
—
—
—
—
—
—
—
CISS
COSS
CRSS
RG
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
20.5
2.8
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
QG
VDS = -10V, VGS = -4.5V,
ID = -4.0A
nC
QGS
QGD
tD(ON)
tR
4.1
Gate-Drain Charge
9.1
Turn-On Delay Time
12.3
120
54
Turn-On Rise Time
VDS = -10V, VGS = -4.5V,
RG = 6Ω, ID = -1.0A
ns
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
23.1
8.3
ns
tRR
IF = -1.0A, di/dt = 100A/μs
IF = -1.0A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25°C.
AS
AS
J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
DMP2035UFDF
30 V
25
20
15
10
5
30
25
20
15
V
= -2.0V
= -8V
GS
GS
V
= -4.5V
GS
V
= -5.0V
DS
V
= -2.5V
GS
V
= -1.8V
GS
T
= 150°C
A
V
= -1.5V
GS
T
= 25°C
A
10
5
T
= 125°C
A
T
= -55°C
A
T
= 85°C
A
V
= -1.2V
GS
0
0
0
0.5
1
1.5
2
2.5
3
0.4 0.6 0.8
1.2 1.4 1.6 1.8
2
2.2
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.03
0.1
0.08
0.06
0.04
0.028
0.026
0.024
0.022
0.02
I
= -8A
D
V
= -2.5V
GS
I
= -6A
D
V
= -4.5V
GS
0.02
0
0.018
0.016
1
3
5
7
9
11 13 15 17 19 21
0
2
4
6
8
10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.026
0.022
1.5
1.3
1.1
0.9
0.7
V
= -10V
GS
T
= 150°C
= 125°C
A
V
= -2.5V
GS
I
= -7A
D
T
A
V
I
= -4.5V
T
= 85°C
= 25°C
GS
A
= -8A
D
0.018
0.014
0.01
T
A
T
= -55°C
A
0
5
10
15
20
25
30
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
DMP2035UFDF
0.04
0.035
0.03
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
I
= -4.5V
GS
= -8A
D
I
= -1mA
D
I
= -250µA
D
0.025
0.02
V
I
= -2.5V
GS
= -7A
D
0.015
0.01
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
Figure 7 On-Resistance Variation with Temperature
30
25
20
15
10
5
10000
f=1MHz
C
iss
1000
100
10
T
= 150°C
A
T = 25°C
A
C
C
oss
T
= 125°C
= 85°C
A
T
= -55°C
A
rss
T
A
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
8
6
100
10
1
R
DS(on)
Limited
P
= 100µs
W
DC
P
= 10s
4
2
W
P
= 1s
W
P
= 100ms
W
V
I
= -10V
DS
TJ(max) = 150°C
TA = 25°C
P
= 10ms
W
0.1
= -4A
D
P
= 1ms
W
VGS = -4.5V
Single Pulse
DUT on 1 * MRP Board
0.01
0
0
5
10
15
20
25
30
0.01
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
DMP2035UFDF
1
0.1
0.01
RJA(t) = r(t) * RJA
RJA = 179°C/W
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
DMP2035UFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57 0.63
0.00 0.05
A3
A1
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
-
-
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325 0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z(4x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
DMP2035UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
相关型号：
DMP2038USS-13
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
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