DMP2123L-7 [DIODES]
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; P沟道增强型场效应晶体管
| 型号： | DMP2123L-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
•
Case: SOT-23
•
Low RDS(ON)
:
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.008 grams (approximate)
•
•
•
72 mΩ @VGS = -4.5V
108 mΩ @VGS = -2.7V
123 mΩ @VGS = -2.5V
•
•
•
•
•
•
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
•
•
•
•
SOT-23
Drain
D
Gate
S
G
Source
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
V
VGSS
±12
Drain Current (Note 1) Continuous
TA = 25°C
A = 70°C
-3.0
-2.4
A
ID
T
Pulsed Drain Current (Note 2)
-15
2.0
A
A
IDM
IS
Body-Diode Continuous Current (Note 1)
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 1)
1.4
W
PD
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
90
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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www.diodes.com
May 2008
© Diodes Incorporated
DMP2123L
Document number: DS31440 Rev. 1 - 2
DMP2123L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
-20
⎯
⎯
-0.6
-15
V
μA
nA
V
BVDSS
IDSS
IGSS
VGS(th)
ID (ON)
⎯
⎯
⎯
⎯
⎯
51
87
99
⎯
-1
ID = -250μA, VGS = 0V
VDS = -20V, VGS = 0V
VDS = 0V, VGS = ±12V
VDS = VGS, ID = -250μA
VGS = -4.5V, VDS = -5V
VGS = -4.5V, ID = -3.5A
TJ = 25°C
±100
-1.25
⎯
72
108
123
On State Drain Current (Note 5)
A
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
⎯
mΩ
VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
VDS = -10V, ID = -3.0A
IS = -1.7A, VGS = 0V
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
7.3
0.79
⎯
S
V
A
gFS
VSD
IS
⎯
⎯
⎯
⎯
-1.26
1.7
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
⎯
7.3
2.0
1.9
12
20
38
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6Ω
41
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
443
128
101
VDS = -16V, VGS = 0V
f = 1.0MHz
Notes:
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
V
= -5V
DS
Pulsed
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
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www.diodes.com
May 2008
© Diodes Incorporated
DMP2123L
Document number: DS31440 Rev. 1 - 2
DMP2123L
C
iss
C
oss
C
rss
V
= -2.5V
GS
f = 1 MHz
= 0V
V
V
= -4.5V
= -10V
GS
GS
V
GS
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
Fig. 4 Typical Total Capacitance
V
= -4.5V
GS
I
= -3.0A
D
-I = 250µA
D
V
I
= -10V
GS
= -3.5A
D
V
= -2.5V
GS
I
= -1.0A
D
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
3 of 4
www.diodes.com
May 2008
© Diodes Incorporated
DMP2123L
Document number: DS31440 Rev. 1 - 2
DMP2123L
Ordering Information (Note 7)
Part Number
Case
Packaging
DMP2123L-7
SOT-23
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
M1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M1P
M = Month ex: 9 = September
Date Code Key
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions
A
SOT-23
Min
Dim
Max
A
B
C
D
F
G
H
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
C
B
TOP VIEW
G
H
K
J
M
K
L
M
L
F
D
α
All Dimensions in mm
Suggested Pad Layout
Dimensions Value (in mm)
Y
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
www.diodes.com
May 2008
© Diodes Incorporated
DMP2123L
Document number: DS31440 Rev. 1 - 2
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