DMP32D4SFB-7B [DIODES]

Low On-Resistance;


型号：	DMP32D4SFB-7B
厂家：	DIODES INCORPORATED
描述：	Low On-Resistance
文件：	总6页 (文件大小：238K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP32D4SFB

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

I_DMax

@ T_A= +25C

-400mA



Low On-Resistance

V_(BR)DSS

R_DS(on)Max

Ultra-Small Surfaced Mount Package

2.4 @ V_GS= -10V

4 @ V_GS= -4.5V

16 @ V_GS= -2.5V

ESD Protected Gate

-30V

-300mA

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

-50mA

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.



Case: X1-DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram



Applications



Load Switch

Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208 e4

Portable Applications

Power Management Functions



Weight: 0.001 grams (approximate)

Drain

X1-DFN1006-3

Gate

Protection

Diode

Source

Bottom View

ESD PROTECTED

Top View

Equivalent Circuit

Ordering Information (Note 4)

Product

DMP32D4SFB-7B

Marking

Reel size (inches)

Quantity per reel

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

XP = Product Type Marking Code

Top View

Bar Denotes Gate and Source Side

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www.diodes.com

March 2013

DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

DMP32D4SFB

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Unit

Gate-Source Voltage

±20

V_GSS

T_A= +25°C

-400

-300

Continuous Drain Current (Note 5)

_GS= -10V

I_D

T_A= +70°C

T_A= +25°C

T_A= +70°C

-500

-400

Continuous Drain Current (Note 6)

Pulsed Drain Current (Note 5)

I_D

I_DM

I_S

-1

Maximum Body Diode continuous Current

-800

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

(Note 5)

(Note 6)

0.5

1.2

Total Power Dissipation

P_D

(Note 5)

(Note 6)

273

105

-55 to 150

Thermal Resistance, Junction to Ambient

°C/W

°C

R_

Operating and Storage Temperature Range

_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-30

BV_DSS

I_DSS

V_GS= 0V, I_D= -1mA

-1

µA

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

V_DS= -30V, V_GS= 0V

V_GS= ±16V, V_DS= 0V

±10

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.3

-2.3

2.4

V_GS(th)

V_DS= V_GS, I_D= -250μA

V_GS= -10V, I_D= -200mA

Static Drain-Source On-Resistance

Ω

R_{DS (ON)}

_GS= -4.5V, I_D= -200mA

_GS= -2.5V, I_D= -10mA

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

|Y_fs|

V_SD

V_DS= -10V, I_D= -400mA

V_GS= 0V, I_S= -300mA

0.8

1.2

C_iss

C_oss

C_rss

Q_g

V_DS= -15V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

0.6

1.3

0.2

3.6

8.5

31.3

20.2

V_GS= -4.5V

Total Gate Charge

Q_g

_DS= -10V,

Gate-Source Charge

Gate-Drain Charge

I_D= -200mA

Q_gs

Q_gd

t_D(on)

t_r

V_GS= -10V

Turn-On Delay Time

Turn-On Rise Time

V_DS= -15V, I_D= -500mA

_GS= -10V, R_G= 1Ω

Turn-Off Delay Time

t_D(off)

t_f

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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March 2013

DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

DMP32D4SFB

1.0

0.8

1.0

0.8

= -10V

= -5.0V

= -4.5V

= -4.0V

= -3.0V

0.6

0.4

0.6

0.4

= 150C

= 85C

0.2

= -2.5V

= 125C

= 25C

= -2.0V

= -55C

-V_DS, DRAIN -SOURCE VOLTAGE (V)

-V_GS, GATE-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

Figure 2 Typical Transfer Characteristics

1.0

1.5

1.2

0.9

0.8

= -0.2A

0.7

0.6

0.5

0.4

0.9

0.6

= -4.5V

= -10V

0.3

0.2

0.3

0.1

0.2

0.4

0.6

0.8

1.0

10 12 14 16 18 20

-I_D, DRAIN SOURCE CURRENT (A)

-V_GS, GATE-SOURCE VOLTAGE (V)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

1.4

1.2

1.6

1.4

= -10V

= -300mA

= -4.5V

1.0

0.8

0.6

= 150C

1.2

1.0

= -4.5V

= 125C

= -200mA

= 85

C

= 25

C

0.4

0.2

= -55C

0.8

0.6

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

-I_D, DRAIN SOURCE CURRENT (A)

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 6 On-Resistance Variation with Temperature

75 100 125 150

C)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

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March 2013

DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

DMP32D4SFB

1.2

0.9

2.2

2.0

= -4.5V

= -200mA

-I = 1mA

1.8

1.6

0.6

-I = 250µA

= -10V

0.3

= -300mA

1.4

1.2

-50 -25

75 100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 7 On-Resistance Variation with Temperature

75 100 125 150

T_A, AMBIENT TEMPERATURE (°C)

C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

100

1.0

iss

0.8

0.6

0.4

oss

T = 150C

rss

T = 125C

T = 85C

T = 25C

0.2

f = 1MHz

T = -55C

0.3

0.6

0.9

1.2

1.5

-V_DS, DRAIN-SOURCE VOLTAGE (V)

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 10 Typical Junction Capacitance

Figure 9 Diode Forward Voltage vs. Current

= -10V

= -200mA

0.2

0.4

0.6

0.8

1.0

1.2 1.4

Q_g, TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

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March 2013

DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

DMP32D4SFB

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

X1-DFN1006-3

Dim Min Max Typ

0.47

0.10

0.45

0.53 0.50

0.05 0.03

0.20 0.15

0.55 0.50

0.95 1.075 1.00

0.55 0.675 0.60

0.35

0.30 0.25



0.20



0.40



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

1.1

0.3

0.2

0.7

0.25

0.4

0.7

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March 2013

DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

DMP32D4SFB

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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March 2013

DMP32D4SFB

Document number: DS36161 Rev. 2 - 2

DMP32D4SFB-7B [DIODES]

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