DMP32D9UFZ-7B [DIODES]
ESD Protected Gate;
| 型号： | DMP32D9UFZ-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | ESD Protected Gate 栅 |
| 文件： | 总6页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP32D9UFZ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
Low Package Profile, 0.42mm Maximum Package height
ID max
TA = +25°C
V(BR)DSS
RDS(ON) max
0.62mm x 0.62mm Package Footprint
5Ω @ VGS = -4.5V
6Ω @ VGS = -2.5V
7Ω @ VGS = -1.8V
10Ω @ VGS = -1.5V
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
ESD Protected Gate
-30V
-0.2A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe
•
•
•
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
•
•
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
•
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP32D9UFZ-7B
X2-DFN0606-3
10K/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U2 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
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June 2014
© Diodes Incorporated
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
DMP32D9UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
±10
VGSS
T
A = +25°C
Steady
State
-200
-100
mA
mA
Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)
ID
TA = +70°C
-500
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Rθ
Value
390
Units
mW
°C/W
°C
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
322
JA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -24V, VGS = 0V
VGS = ±10V, VDS = 0V
100
±10
nA
µA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
—
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
—
—
—
-1.0
5
V
ꢀ
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = -250μA
V
V
V
GS = -4.5V, ID = -100mA
GS = -2.5V, ID = -50mA
GS = -1.8V, ID = -20mA
—
—
6
Static Drain-Source On-Resistance
—
—
7
—
—
10
—
-1.0
VGS = -1.5V, ID = -10mA
GS = -1.2V, ID = -1mA
—
6
V
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
-0.75
VGS = 0V, IS = -10mA
—
—
—
—
—
—
—
—
—
—
22.5
2.9
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2.1
0.35
0.06
0.09
3.1
VGS = -4.5V, VDS =- 15V,
ID = -200mA
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
Turn-On Delay Time
Turn-On Rise Time
2.3
VDD = -10V, VGS = -4.5V,
RG = 6ꢀ, ID = -200mA
Turn-Off Delay Time
19.9
10.5
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
DMP32D9UFZ
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= -4.5V
GS
V
= -5.0V
DS
V
= -3.0V
GS
V
= -4.0V
GS
V
= -2.5V
GS
V
= -3.5V
GS
V
= -2.0V
GS
V
= -1.5V
= -1.2V
GS
T
= 150
°
C
A
T
= 85°C
A
V
GS
V
= -1.0V
GS
T
= 125°C
A
T
= 25°C
A
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristics
100
10
1
8
7
6
5
4
3
2
1
0
V
= -4.5V
GS
T
= 150°C
A
V
= -1.5V
GS
V
= -2.5V
V
GS
V
= -1.8V
GS
= -4.5V
GS
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-ID, DRAIN SOURCE CURRENT (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1.8
1.6
1.4
1.2
1
6
5
4
3
2
1
0
V
I
= -4.5V
GS
= -300mA
D
V
I
= -2.5V
GS
= -100mA
D
V
= -2.5V
GS
I
= -100mA
D
V
I
= -4.5V
GS
= -300mA
D
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°C)
°
C)
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© Diodes Incorporated
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
DMP32D9UFZ
1
0.9
0.8
0.7
0.6
0.5
0.4
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-I = 1mA
D
-I = 250µA
D
T = 150°C
A
T = 85
°
C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
0
0.3
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
10
8
f = 1MHz
C
iss
6
10
V
= -15V
DS
= -200mA
I
D
4
C
oss
2
C
rss
1
0
0
4
8
12
16
20
24
28
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * Rθ
JA
RθJA = 325°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
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June 2014
© Diodes Incorporated
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
DMP32D9UFZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A1
X2-DFN0606-3
Dim
A
A1
b
Min
0.36
0
0.10
0.57
Max
0.42
0.05
0.20
0.67
Typ
0.39
0.02
0.15
0.62
Seating Plane
D
D
D2
D2
D3
E
E2
e
k
L
L2
0.155 BSC
0.185 BSC
0.67
D3
e/ 2
0.57
0.40
0.62
0.50
0.60
0.35 BSC
0.16 REF
0.21
E2
e
0.09
0.11
0.15
0.21
E
0.31
All Dimensions in mm
b
2x
k
L2
L
2x
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Value
Y
Dimensions
(in mm)
0.350
0.280
0.350
0.760
0.200
0.600
C
X
X1
X2
Y
C
Y1
X1
Y1
X2
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© Diodes Incorporated
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
DMP32D9UFZ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS36842 Rev. 2 - 2
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