DMP4010SK3-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP4010SK3-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP4010SK3
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID
TC = +25°C
-50A
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
BVDSS
RDS(ON) Max
9.9mΩ @ VGS = -10V
14mΩ @ VGS = -4.5V
Fast Switching Speed
-40V
-45A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: TO252
Applications
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
DC-DC Converters
Power Management Functions
Backlighting
Terminals: Finish – Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252
D
D
D
G
G
S
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP4010SK3-13
TO252
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
.
P4010S = Product Type Marking Code
P4010S
YYWW
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
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October 2015
© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-40
Unit
V
Gate-Source Voltage
±25
V
VGSS
Steady
State
TC = +25°C
-50
-40
A
A
ID
TC = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
-15
-12
ID
IDM
IS
-100
-5.5
-22
A
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Avalanche Current, L = 1mH (Note 7)
A
IAS
EAS
Avalanche Energy, L = 1mH (Note 7)
260
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
1.7
Unit
W
PD
RθJA
PD
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
73
3.3
°C/W
W
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
38
RθJA
RθJC
TJ, TSTG
°C/W
°C
1.0
Operating and Storage Temperature Range
-55 to +150
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 25V, VDS = 0V
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.5
-2
-2.5
9.9
14
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
VGS = 0V, IS = -1A
7.5
Static Drain-Source On-Resistance
10.5
-0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-1
4,234
1,036
526
7.8
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
42.7
91
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
Qg
VDS = -20V,
ID = -9.8A
nC
14.2
13.5
13.2
10
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V, VDD = -20V,
RG = 6Ω, ID = -1A
ns
Turn-Off Delay Time
303
138
26
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = -9.8A, di/dt = -100A/µs
IF = -9.8A, di/dt = -100A/µs
20
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25°C.
AS AS
J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
30.0
25.0
20.0
15.0
10.0
5.0
20
16
12
8
VDS = -5.0V
VGS = -10.0V
VGS=-5.0V
VGS = -4.5V
VGS = -4.0V
VGS = -3.5V
VGS = -3.0V
TA =125℃
TA =85℃
4
TA =25℃
TA =-55℃
TA =150℃
VGS = -2.5V
1.6
0.0
0
0
0.4
0.8
1.2
2
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.014
0.012
0.010
0.008
0.006
0.004
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = -4.5V
VGS = -10V
ID = -9.8A
0
5
10
15
20
25
30
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.018
0.016
0.014
0.012
0.01
1.8
1.6
1.4
1.2
1
VGS = -4.5V
TA =150℃
TA =125℃
VGS = -10V, ID = -9.8A
TA =85℃
TA =25℃
0.8
0.6
0.008
0.006
VGS = -4.5V, ID = -9.8A
TA =-55℃
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
ID, DRAIN CURRENT(A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
2.2
2
0.02
0.018
0.016
0.014
0.012
0.01
ID = -1mA
1.8
1.6
1.4
1.2
1
VGS = -4.5V, ID = -9.8A
ID = -250μA
0.008
0.006
0.004
VGS = -10V, ID = -9.8A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
f=1MHz
Ciss
VGS = 0V
Coss
TA = 85oC
Crss
TA = 125oC
TA = 25oC
TA = 150oC
TA = -55oC
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
8
1000
100
10
RDS(ON) Limited
PW =10µs
PW =1µs
6
PW =100µs
PW =1ms
PW =10ms
PW =100ms
VDS = -20V, ID = -9.8A
4
1
DC
TJ(Max) = 150℃
TA = 25℃
2
0.1
0.01
Single Pulse
DUT on infinite heatsink
VGS= -10V
0
0
20
40
60
80
100
120
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg (nC)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 2.72℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, Pulse Duration Time (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TO252 (DPAK)
E
A
TO252 (DPAK)
Dim Min Max Typ
2.19 2.39 2.29
b3
7°± 1°
c
A
L3
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b
0.64 0.88 0.783
D
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
A2
H
L4
c
D
0.45 0.58 0.531
6.00 6.20 6.10
D1 5.21
—
—
—
2.286
e
—
E
6.45 6.70 6.58
e
E1 4.32
—
—
b( 3x)
H
L
9.40 10.41 9.91
1.40 1.78 1.59
b2( 2x)
0.508
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
Gauge Plane
a
0°
10°
—
D1
Seating Plane
E1
All Dimensions in mm
L
A1
2.74REF
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TO252 (DPAK)
X1
Dimensions Value (in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y1
Y2
C
Y
X
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© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
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